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STMicroelectronics STB20NM60-1
- Part No.:
- STB20NM60-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB20NM60-1.pdf
- Description:
- MOSFET N-CH 600V 20A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,736
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Product details
Overview
STB20NM60-1 from STMicroelectronics is an N-channel 600 V, 20 A Power MOSFET using MDmesh™ technology in D²PAK (TO-263) package, featuring 250 mΩ typical RDS(on), 100% avalanche tested, and optimized for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB20NM60-1 datasheet, STB20NM60-1 pinout, STB20NM60-1 application, or STB20NM60-1 equivalent, key selection criteria include its 15 V/ns dv/dt capability, 39 nC total gate charge, 650 mJ single-pulse avalanche energy, and thermal resistance of 0.65 °C/W (junction-to-case), critical for high-reliability 600 V hard-switching topologies.
Technical Context
This device implements ST's MDmesh™ multi-drain process with PowerMESH™ horizontal layout to achieve ultra-low on-resistance while maintaining robust avalanche ruggedness. Its 1500 pF input capacitance and 35 pF reverse transfer capacitance support fast, low-loss switching at high bus voltages.
The integrated body diode exhibits 390 ns reverse recovery time and 5 μC Qrr at 25 °C, enabling reliable operation in discontinuous conduction mode (DCM) PFC and flyback converters without external snubbing. Gate threshold voltage is tightly specified at 3–5 V, ensuring clean turn-on under wide VGS margin conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports full-range universal AC input (85–265 VAC) with ≥2× safety margin in 400 V DC bus applications. |
| RDS(on) typ. | 250 mΩ - Enables <1.0 W conduction loss at 20 A continuous drain current, reducing heatsink requirements in TO-263 footprint. |
| Qg | 39 nC - Low gate charge minimizes driver power and enables use of cost-effective 1-A gate drivers in 100–300 kHz SMPS designs. |
| EAS | 650 mJ - Confirmed single-pulse avalanche energy rating ensures robustness against inductive switching transients without derating. |
| dv/dt | 15 V/ns - High intrinsic noise immunity prevents spurious turn-on in high-di/dt environments like bridge-leg configurations. |
| RthJC | 0.65 °C/W - Enables direct mounting to PCB copper pour or small heatsinks for thermally constrained industrial enclosures. |
| ID (TC=100°C) | 12.6 A - Specifies usable continuous current under real-world board-level thermal conditions, not ideal lab ratings. |
Pinout & Package
D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab (pin 2) for low-inductance, high-current PCB routing and thermal conduction to internal copper layers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance control terminal; requires ≤100 Ω series gate resistor to damp ringing from 1.6 Ω intrinsic gate resistance and 1500 pF Ciss. |
| Pin 2 (D / TAB) | Drain (exposed metal tab) | Primary high-voltage node; electrically connected to PCB copper pour for thermal dissipation and low-inductance return path in high-frequency switching. |
| Pin 3 (S) | Source | Reference node for gate drive and current sensing; must be routed with minimal loop area to avoid noise coupling into gate circuitry. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ trench-gate structure | Delivers 250 mΩ RDS(on) in D²PAK while maintaining 600 V breakdown - 30% lower on-resistance than conventional planar MOSFETs at same voltage class. |
| 100% unclamped inductive switching (UIS) tested | Guarantees minimum 650 mJ avalanche energy per device - eliminates need for external clamping circuits in flyback and resonant LLC primary switches. |
| Low Crss/Ciss ratio (35/1500 pF) | Reduces Miller effect-induced switching delay and improves controllability during hard commutation in half-bridge topologies. |
| ECOPACK® compliant packaging | Meets RoHS and halogen-free requirements without compromising thermal or electrical performance - suitable for industrial and consumer-grade certifications. |
| 15 V/ns dv/dt immunity | Prevents false triggering in high-noise environments such as variable-frequency drives and welding inverters without additional gate protection. |
Applications
| Industrial Switched-Mode Power Supplies | Active PFC Front-End Stages |
|---|---|
|
Use Scenario: Primary-side switch in 300–500 W offline SMPS for PLC controllers and HMI panels. IC Role / Device Role / Timing Role: High-voltage switching element in quasi-resonant flyback topology operating at 65–130 kHz. Use Value: 250 mΩ RDS(on) reduces conduction losses by 22% vs. legacy 600 V MOSFETs, enabling >90% efficiency at full load without forced air cooling. |
Use Scenario: Boost switch in continuous conduction mode (CCM) active PFC stage for LED streetlight drivers. IC Role / Device Role / Timing Role: Main power switch handling 10–20 A peak currents at 65 kHz with near-unity power factor correction. Use Value: 390 ns trr and 5 μC Qrr minimize diode recovery losses and EMI generation, reducing filter component count by 30%. |
| Motor Drive Inverter Legs | Uninterruptible Power Supply (UPS) Output Stage |
|
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter for 0.75 kW HVAC compressors. IC Role / Device Role / Timing Role: High-side switching device subjected to rapid voltage transients during shoot-through prevention. Use Value: 15 V/ns dv/dt rating and 100% UIS testing ensure reliable operation under 1000 V/μs transient stress without gate oscillation or latch-up. |
Use Scenario: Inverter-stage switch in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Bidirectional switching element in half-bridge configuration managing 20 A peak load current and regeneration pulses. Use Value: 650 mJ EAS withstands repeated inductive kickback from transformer-coupled output filters, extending MTBF beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60 | Same die, TO-220 through-hole package; RthJC = 0.65 °C/W but higher RthJA (62.5 °C/W) due to leadframe thermal path. | Better suited for prototyping or low-volume assemblies where manual soldering or socketing is required. | Select when mechanical mounting flexibility or legacy board compatibility outweighs surface-mount density advantages. |
| IPW60R037P7 | Infineon CoolMOS™ C7; 37 mΩ @ 650 V, lower Qg (32 nC), but higher VGS(th) (3.5–5.5 V) and no 100% UIS test guarantee. | Preferred in high-frequency (>200 kHz) resonant converters where gate loss dominates, but less robust in hard-switched PFC. | Choose only after validating avalanche margin in final system layout; not drop-in for STB20NM60-1 in legacy designs requiring proven UIS behavior. |
Compared with STP20NM60, STB20NM60-1 offers superior thermal performance in compact layouts via D²PAK's low-inductance drain tab; versus IPW60R037P7, it trades higher RDS(on) for guaranteed avalanche ruggedness and tighter VGS(th) distribution - critical for stable gate drive in cost-sensitive industrial systems.
Availability
STB20NM60-1 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, active PFC front-end stages, motor drive inverter legs, and uninterruptible power supply (UPS) output stages requiring stable component supply across multi-year production cycles.
Supply support for STB20NM60-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 500–900 V switching applications where avalanche robustness, low gate charge, and thermal performance are non-negotiable.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STB20NM60-1 supports 12.6 A continuous drain current when the case temperature is maintained at 100°C, as confirmed in Table 1 of DS2343 Rev 13. This rating accounts for thermal derating due to junction-to-case resistance (0.65 °C/W) and maximum junction temperature (150°C), making it suitable for thermally constrained PCB layouts without active cooling.
Does STB20NM60-1 include an integrated body diode, and what are its key recovery parameters?
Yes, it features a monolithic source-drain body diode rated for 20 A continuous and 80 A pulsed current. At 25°C, its reverse recovery time is 390 ns with 5 μC Qrr; at 150°C, these degrade to 510 ns and 6.5 μC. These values are measured under standardized conditions (ISD = 20 A, di/dt = 100 A/μs, VDD = 60 V) and directly impact EMI and switching loss in hard-commutated topologies.
Can STB20NM60-1 be used in place of STB20NM60T4?
No - STB20NM60-1 was removed from ST's official ordering information as of DS2343 Rev 13 (July 2025). STB20NM60T4 is the active, tape-and-reel packaged variant marked "B20NM60" in D²PAK. STB20NM60-1 lacks current status confirmation, packaging details, or marking data in the latest datasheet and is not recommended for new designs.
What is the gate threshold voltage range, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) is specified from 3.0 V to 5.0 V at ID = 250 µA, with typical value near 4.0 V. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing reliable operation with 10 V gate drive while avoiding unintended conduction from noise spikes below 3 V - critical for gate drivers without active pull-down circuitry.
STB20NM60-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB20NM60-1 FAQ
1.How can I place an order for STB20NM60-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB20NM60-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB20NM60-1 reliable?
The price and inventory of STB20NM60-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB20NM60-1 is usually 5 days.
3.What payment methods are accepted for STB20NM60-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB20NM60-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB20NM60-1?
STB20NM60-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB20NM60-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB20NM60-1?
For technical support, including STB20NM60-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB20NM60-1 requirements.
6.How does Aetrix verify that STB20NM60-1 is sourced from the original manufacturer or authorized distributors?
All STB20NM60-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB20NM60-1 meets industry standards.
7.What is the process for return or replacement of STB20NM60-1?
All STB20NM60-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB20NM60-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB20NM60-1 part is unused and in its original packaging.
Return procedure for STB20NM60-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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