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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB21NM50N-1

Name: STB21NM50N-1
Brand: STMicroelectronics
SKU: STB21NM50N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB21NM50N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB21NM50N-1.pdf

Description:: MOSFET N-CH 500V 18A I2PAK

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Product details

Overview

STB21NM50N-1 from STMicroelectronics is an N-channel 500 V, 0.15 Ω (typ), 18 A power MOSFET in I2PAK (TO-262) package, featuring second-generation MDmesh™ technology for ultra-low R_DS(on) and gate charge. It delivers high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives where thermal performance and avalanche ruggedness are critical.

For engineers reviewing the STB21NM50N-1 datasheet, STB21NM50N-1 pinout, STB21NM50N-1 application, or STB21NM50N-1 equivalent, key selection criteria include its 500 V V_DSS, 0.15 Ω R_DS(on) at V_GS = 10 V, 65 nC total gate charge, 140 W T_C = 25°C power dissipation, and 100% avalanche-tested ruggedness - all validated for high-reliability 50/60 Hz AC-input power conversion.

Technical Context

This device employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its low C_iss (1950 pF), C_oss (420 pF), and C_rss (60 pF) at V_DS = 25 V enable fast, controllable switching with reduced EMI generation in hard-switched topologies.

The integrated source-drain diode exhibits 360 ns reverse recovery time (T_j = 25°C) and 5 µC Q_rr, supporting quasi-resonant and ZVS designs. Its 0.89 °C/W R_thj-case and 100% unclamped inductive avalanche rating (E_AS = 480 mJ) ensure robust operation under transient overloads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands full 400 V DC bus plus safety margin in universal-input offline converters
R_DS(on)	0.150 Ω (typ) at V_GS = 10 V - Enables <1.4 W conduction loss at 18 A, reducing heatsink requirements
Q_g	65 nC - Low gate drive energy supports high-frequency operation up to 200 kHz with standard gate drivers
I_D (cont)	18 A at T_C = 25°C - Rated for continuous output current in TO-262 package with adequate heatsinking
E_AS	480 mJ - Confirmed single-pulse avalanche energy ensures reliability during load dump or short-circuit events
R_thj-case	0.89 °C/W - Enables efficient thermal transfer to heatsink, critical for high-power density designs
dv/dt	44 V/ns - High immunity to parasitic turn-on in high-speed switching applications

Pinout & Package

STB21NM50N-1 uses the I2PAK (TO-262) package: a surface-mount-compatible variant of TO-220 with isolated drain tab, optimized for automated assembly and thermal performance in medium-power applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring ≤10 V drive; low Q_g enables fast edge rates with minimal driver loss
2 (Drain)	Main power output	Internally connected to exposed metal tab - must be electrically isolated from heatsink unless referenced to system ground
3 (Source)	Power return / reference node	Low-inductance connection point for gate driver return and current sensing; ties directly to PCB ground plane

Key Features

Feature	Design Value
Second-generation MDmesh™ technology	Combines low R_DS(on) and low gate charge without trade-off - enables >95% efficiency in 1 kW PFC stages
100% avalanche tested	Guarantees ruggedness against inductive kickback in motor control and relay driving without external snubbers
Low C_oss (420 pF) and C_rss (60 pF)	Reduces switching loss and improves EMI profile in high-frequency flyback and LLC resonant converters
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect meets JEDEC JESD97; suitable for lead-free reflow and industrial environmental compliance
Enhanced diode recovery (t_rr = 360 ns)	Minimizes body diode conduction loss and voltage overshoot in synchronous rectification and half-bridge configurations

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: Primary-side switch in 500–1000 W open-frame AC/DC supplies for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with zero-voltage switching assistance.

Use Value: 0.15 Ω R_DS(on) reduces conduction loss by 35% vs. legacy 0.22 Ω devices, enabling smaller heatsinks and higher power density.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) active PFC stage for telecom rectifiers.

IC Role / Device Role / Timing Role: Main switching element handling full-line current with tight duty-cycle control.

Use Value: Low Q_g (65 nC) and dv/dt immunity (44 V/ns) allow stable operation at 100 kHz with minimal gate-drive loss and no false triggering.

Motor Drive Inverters (≤1.5 kW)

Uninterruptible Power Supplies (UPS)

Use Scenario: Upper-leg switch in three-phase IGBT/MOSFET inverter modules for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching device subjected to rapid voltage transients during commutation.

Use Value: 480 mJ E_AS rating withstands repeated inductive energy spikes during motor stall or overload conditions.

Use Scenario: DC-link switch in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Bidirectional power path controller managing grid-to-battery and battery-to-load transitions.

Use Value: Robust source-drain diode (I_SD = 18 A, t_rr = 360 ns) supports seamless transfer without external freewheeling diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 500 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP21NM50N	Same die, TO-220 package; R_thj-case = 0.89 °C/W but requires through-hole mounting and larger PCB footprint	Better suited for prototyping or low-volume manual assembly where thermal interface is less constrained	Select when mechanical compatibility with legacy TO-220 footprints is required and automated SMT is not used
STW21NM50N	Same die, TO-247 package; identical R_DS(on) and Q_g, but R_thj-case = 0.89 °C/W and higher creepage/clearance	Preferred for high-isolation, high-reliability industrial inverters where creepage >5 mm is mandated	Choose when enhanced isolation, higher power derating margin, or direct heatsink bolt-down is needed

Compared with STP21NM50N and STW21NM50N, the STB21NM50N-1 offers identical electrical performance in a compact I2PAK package optimized for automated SMT production, lower profile, and improved thermal coupling via soldered tab - making it ideal for space-constrained, high-volume power supply designs.

Availability

STB21NM50N-1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and motor drive inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for STB21NM50N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This part belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for STB21NM50N-1 at 100°C case temperature?

The maximum continuous drain current is 11 A at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits of the I2PAK package and ensures safe junction temperature operation below 150°C under sustained load conditions with appropriate heatsinking.

Does STB21NM50N-1 have an integrated body diode, and what are its key recovery characteristics?

Yes, it features an integral source-drain diode rated for 18 A continuous and 72 A pulsed current. At T_j = 25°C, its reverse recovery time is 360 ns, Q_rr is 5 µC, and peak reverse recovery current is 27 A - values confirmed under ISD = 18 A, di/dt = 100 A/µs, and V_DD = 100 V test conditions.

Can STB21NM50N-1 be used in avalanche mode, and what is its rated single-pulse energy?

Yes - it is 100% avalanche tested per datasheet specification. The single-pulse avalanche energy (E_AS) is 480 mJ at starting T_j = 25°C, ID = I_AR, and V_DD = 50 V. This rating applies to unclamped inductive switching events and supports reliable operation in circuits lacking external snubbers.

Is STB21NM50N-1 compatible with lead-free reflow soldering processes?

Yes - it is packaged in an ECOPACK®-compliant I2PAK with lead-free second-level interconnect, qualified for standard Pb-free reflow profiles (peak temperature ≤260°C). The inner box label specifies JEDEC JESD97-compliant soldering conditions, including maximum temperature and time above liquidus.

STB21NM50N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB21NM50N-1 FAQ

1.How can I place an order for STB21NM50N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB21NM50N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB21NM50N-1 reliable?

The price and inventory of STB21NM50N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB21NM50N-1 is usually 5 days.

3.What payment methods are accepted for STB21NM50N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB21NM50N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB21NM50N-1?

STB21NM50N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB21NM50N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB21NM50N-1?

For technical support, including STB21NM50N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB21NM50N-1 requirements.

6.How does Aetrix verify that STB21NM50N-1 is sourced from the original manufacturer or authorized distributors?

All STB21NM50N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB21NM50N-1 meets industry standards.

7.What is the process for return or replacement of STB21NM50N-1?

All STB21NM50N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB21NM50N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB21NM50N-1 part is unused and in its original packaging.

Return procedure for STB21NM50N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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