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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB21NM60N

Name: STB21NM60N
Brand: STMicroelectronics
SKU: STB21NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB21NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB21NM60N.pdf

Description:: MOSFET N-CH 600V 17A D2PAK

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Product details

Overview

STB21NM60N from STMicroelectronics is an N-channel 600 V, 17 A, 0.17 Ω R_DS(on) Power MOSFET in D2PAK package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (66 nC), and low input capacitance (1900 pF), enabling high-frequency operation in SMPS and PFC stages.

For engineers reviewing the STB21NM60N datasheet, STB21NM60N pinout, STB21NM60N application, or STB21NM60N equivalent, key selection criteria include its 600 V V_DSS, 17 A continuous drain current at T_C = 25 °C, 0.17 Ω R_DS(on) at V_GS = 10 V, 66 nC total gate charge, and D2PAK thermal resistance (R_thj-case = 4.21 °C/W).

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses. Its 600 V breakdown voltage (V_(BR)DSS) and 8.5 A repetitive avalanche current support robust operation under inductive switching stress.

The MOSFET delivers 12 S forward transconductance (g_fs) at V_DS = 15 V and I_D = 8.5 A, with fast switching times: 22 ns turn-on delay, 15 ns rise time, 84 ns turn-off delay, and 31 ns fall time under 300 V/8.5 A conditions with 4.7 Ω gate resistor.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands up to 600 V drain-source voltage before breakdown, suitable for universal-input offline SMPS.
R_DS(on) max	0.22 Ω - Maximum on-resistance at V_GS = 10 V and I_D = 8.5 A; ensures low conduction loss at full load.
I_D (cont)	17 A - Continuous drain current rating at case temperature 25 °C; defines maximum steady-state power handling.
Q_g	66 nC - Total gate charge required to fully switch the device; directly impacts gate driver sizing and switching loss.
C_iss	1900 pF - Input capacitance at V_DS = 50 V; determines gate drive energy and influences EMI behavior.
E_AS	610 mJ - Single-pulse avalanche energy capability; enables reliable operation during unclamped inductive turn-off events.
R_thj-case	4.21 °C/W - Junction-to-case thermal resistance in D2PAK package; critical for heatsink sizing in high-power applications.

Pinout & Package

STB21NM60N is housed in a surface-mount D2PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The package features a large exposed drain pad for enhanced thermal dissipation and mechanical stability on PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤ ±25 V bias; low 2 Ω gate input resistance minimizes RC delay.
2 (Drain)	High-side power terminal	Connected to high-voltage rail; electrically tied to exposed metal tab for thermal conduction and electrical connection.
3 (Source)	Reference/return terminal	Serves as power return path and gate drive reference; forms common node with driver ground in half-bridge configurations.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Enables lowest R_DS(on) × Q_g figure-of-merit among 600 V MOSFETs, reducing both conduction and switching losses simultaneously.
100% avalanche tested	Guarantees minimum 8.5 A repetitive avalanche current and 610 mJ single-pulse energy, eliminating need for external snubbers in flyback/PFC designs.
Low gate charge (66 nC)	Reduces gate driver power consumption and allows use of smaller, lower-cost drivers without sacrificing switching speed.
Low input capacitance (1900 pF)	Minimizes capacitive coupling noise and improves EMI performance in high-dv/dt environments like LLC resonant converters.
ECOPACK® RoHS-compliant packaging	D2PAK meets JEDEC JESD97 standards with lead-free second-level interconnect, supporting automated reflow assembly and environmental compliance.

Applications

Server PSU

Industrial Motor Drive

Use Scenario: Primary-side switching in 1–3 kW telecom/server power supplies operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant topology, handling 400 V DC bus.

Use Value: 0.17 Ω R_DS(on) and 66 nC Q_g enable >95% efficiency at full load while maintaining thermal margin on standard 2-layer PCBs.

Use Scenario: Inverter leg switching in 0.75–2.2 kW variable frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase IGBT/MOSFET inverter stage, commutating motor phase currents up to 17 A RMS.

Use Value: 100% avalanche rating supports safe operation during motor stall or short-circuit events without desaturation protection circuitry.

Photovoltaic Inverter

EV Onboard Charger

Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V PV array output to 400 V DC link.

IC Role / Device Role / Timing Role: Main switching element in interleaved boost converter, operating at 50–100 kHz with synchronous rectification.

Use Value: 600 V V_DSS and 17 A I_D allow direct interface with high-voltage PV strings while minimizing conduction loss across wide input range.

Use Scenario: Isolated DC-DC stage in 3.3–6.6 kW bidirectional onboard chargers for plug-in hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology, conducting up to 17 A at 100–200 kHz.

Use Value: Low 1.5 V source-drain diode forward voltage (V_SD) reduces body-diode conduction loss during dead-time, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW21NM60N	Same die, TO-247 package; R_thj-case = 0.89 °C/W vs. 4.21 °C/W for D2PAK; higher peak current (68 A pulsed) due to superior thermal path.	Preferred for forced-air-cooled industrial inverters requiring >100 W dissipation; not suitable for space-constrained SMT layouts.	Select when thermal budget exceeds 40 W and board area permits through-hole mounting.
IPP60R190C6	Infineon CoolMOS™ C6; 650 V, 0.19 Ω, 61 nC; lower Q_g but higher R_DS(on); different gate threshold (2.5–3.5 V vs. 2–4 V).	Better suited for ZVS/ZCS topologies due to lower Q_g/C_oss ratio; less tolerant of gate drive undershoot in hard-switched PFC.	Choose for resonant converters where switching loss dominates; avoid in hard-switched boost where R_DS(on) sensitivity is higher.

Compared with STW21NM60N and IPP60R190C6, STB21NM60N offers optimal balance of low R_DS(on), moderate Q_g, and compact D2PAK footprint-making it ideal for cost-sensitive, medium-power SMT-based SMPS where thermal design targets <40 W dissipation.

Availability

STB21NM60N is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, industrial motor drives, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STB21NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The STB21NM60N belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including telecom PSUs, solar inverters, and industrial motor controls.

FAQ

What is the maximum junction temperature and how does it affect reliability?

The STB21NM60N has a maximum operating junction temperature of 150 °C. Exceeding this limit accelerates parametric drift and reduces long-term reliability, especially under repeated avalanche stress. Derating curves in Figure 2 show safe operating area collapse above 125 °C, requiring thermal design to maintain T_j ≤ 135 °C for 10-year field life in industrial applications.

Can STB21NM60N be used in synchronous rectification mode?

Yes-the device integrates a fast, low-V_SD (1.5 V at 17 A) body diode with 372 ns reverse recovery time at 25 °C, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge topologies. However, external Schottky diodes are recommended for >150 °C ambient operation due to increased t_rr at elevated temperature.

Is STB21NM60N pin-compatible with other MDmesh™ devices in D2PAK?

No-while STB21NM60N shares the D2PAK footprint with STF21NM60N (TO-220FP) and STP21NM60N (TO-220), its pinout (G-D-S) differs from STW21NM60N (TO-247, G-D-S) only in mechanical form; electrically identical but thermally distinct. No direct pin-for-pin replacement exists across package variants due to differing thermal pad configurations and leadframe geometries.

What gate drive voltage range is recommended for optimal R_DS(on) and reliability?

A gate drive voltage of 10–15 V is recommended: 10 V ensures full enhancement (R_DS(on) ≤ 0.22 Ω), while 15 V maximizes g_fs and reduces Miller plateau duration. Voltages >18 V risk gate oxide degradation over time; voltages <8 V increase R_DS(on) nonlinearly and raise switching losses due to incomplete turn-on.

STB21NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB21NM60N FAQ

1.How can I place an order for STB21NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB21NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB21NM60N reliable?

The price and inventory of STB21NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB21NM60N is usually 5 days.

3.What payment methods are accepted for STB21NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB21NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB21NM60N?

STB21NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB21NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB21NM60N?

For technical support, including STB21NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB21NM60N requirements.

6.How does Aetrix verify that STB21NM60N is sourced from the original manufacturer or authorized distributors?

All STB21NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB21NM60N meets industry standards.

7.What is the process for return or replacement of STB21NM60N?

All STB21NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB21NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB21NM60N part is unused and in its original packaging.

Return procedure for STB21NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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