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STMicroelectronics STB21NM60N-1
- Part No.:
- STB21NM60N-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB21NM60N-1.pdf
- Description:
- MOSFET N-CH 600V 17A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,618
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Product details
Overview
STB21NM60N-1 from STMicroelectronics is an N-channel 600 V, 17 A, 0.17 Ω RDS(on) Power MOSFET in I2PAK (TO-262) package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (66 nC), and low input capacitance (1900 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB21NM60N-1 datasheet, STB21NM60N-1 pinout, STB21NM60N-1 application, or STB21NM60N-1 equivalent, key selection criteria include its 600 V VDSS, 0.17 Ω RDS(on) at VGS = 10 V, 150 °C Tj(max), 8.5 A repetitive avalanche current, and I2PAK thermal resistance of 0.89 °C/W (j-case).
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 66 nC total gate charge and 33 nC Qgd support high-frequency operation up to 100 kHz in hard-switched topologies while maintaining low EMI due to controlled dv/dt (48 V/ns typical).
The integrated source-drain diode exhibits 372 ns reverse recovery time and 4.6 µC Qrr at 25 °C, optimized for snubberless inductive switching. Thermal design is enabled by a low 0.89 °C/W junction-to-case resistance in the I2PAK package, supporting continuous 17 A operation at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands DC bus voltages up to 400 VAC rectified with 50% safety margin in offline SMPS. |
| RDS(on) max | 0.22 Ω - Confirmed at VGS = 10 V, ID = 8.5 A; ensures <1.6 W conduction loss at 17 A. |
| Qg | 66 nC - Enables efficient gate drive with standard 1 A peak drivers at 100 kHz switching. |
| ID (cont.) | 17 A at TC = 25 °C - Rated for continuous operation with heatsink; derates to 10 A at TC = 100 °C. |
| EAS | 610 mJ - Single-pulse avalanche energy supports unclamped inductive turn-off without external snubbers. |
| Tj(max) | 150 °C - Allows operation in high-ambient industrial environments with appropriate thermal management. |
| Ciss | 1900 pF - Low input capacitance reduces gate drive power and improves voltage-mode control stability. |
Pinout & Package
STB21NM60N-1 is housed in an I2PAK (TO-262) surface-mount compatible package with isolated tab, rated for 2500 VRMS insulation withstand voltage. The package provides 0.89 °C/W junction-to-case thermal resistance and supports through-hole or SMT mounting with mechanical footprint per ST's Doc 7012510-I.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Low-inductance connection point; tied to PCB ground plane for EMI control and thermal spreading. |
| 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <2 Ω series gate resistor to damp ringing and limit dv/dt-induced turn-on. |
| 3 (Drain) | Main high-voltage power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad. |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ structure | Reduces RDS(on) × Qg figure-of-merit by 35% vs first-gen, enabling higher efficiency at 65–100 kHz. |
| 100% avalanche tested | Guarantees robustness under unclamped inductive switching events up to 8.5 A and 610 mJ. |
| Low gate input resistance | 2 Ω measured at 1 MHz - minimizes gate drive loop oscillation and simplifies RC damping design. |
| ECOPACK® compliance | Lead-free second-level interconnect with JEDEC JESD97 marking - meets RoHS and ELV requirements. |
| Fast body diode | 372 ns trr and 4.6 µC Qrr at 25 °C - reduces dead-time losses and enables quasi-resonant operation. |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: High-density 1U server power supply operating at 100 kHz with 380–400 VDC bus. IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant half-bridge primary side. Use Value: 0.17 Ω RDS(on) and 66 nC Qg reduce conduction + switching losses to <2.1 W at full load, enabling >95% efficiency. |
Use Scenario: Three-phase active front-end PFC in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Fast-switching boost switch handling 17 A peak inductor current at 50–75 kHz. Use Value: Low Coss (110 pF) and 48 V/ns dv/dt rating suppress voltage overshoot during zero-current turn-off, eliminating snubber losses. |
| Solar Microinverter DC-DC Stage | Motor Drive Inverter Leg |
|
Use Scenario: Isolated DC-DC converter in residential solar microinverter, stepping 40–60 V PV input to 400 V bus. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology. Use Value: 150 °C Tj(max) and 0.89 °C/W Rth(j-c) allow sustained 15 A operation in sealed outdoor enclosures without forced air. |
Use Scenario: 3 kW servo drive inverter leg switching 17 A RMS motor current at 8 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side switching element with integrated freewheeling diode. Use Value: 372 ns trr and soft recovery reduce shoot-through risk and EMI during commutation, improving EMC compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP21NM60N | Same die, TO-220 package; Rth(j-c) = 0.89 °C/W but lower creepage/clearance vs I2PAK. | Preferred for prototyping or low-volume through-hole assembly; not suitable for automated SMT lines. | Select when manual assembly or heatsink interface simplicity outweighs board space constraints. |
| IPP60R190C6 | Infineon CoolMOS™ C6; 650 V, 0.19 Ω, 63 nC - slightly higher RDS(on) but lower Qgd/Qg ratio. | Better suited for ZVS/ZCS topologies due to lower gate-drain charge; requires tighter gate drive timing control. | Choose for resonant LLC designs where reduced Qgd improves zero-voltage switching margin. |
Compared with STP21NM60N, STB21NM60N-1 offers identical electrical specs but superior thermal performance in automated SMT layouts; versus IPP60R190C6, it delivers lower conduction loss at cost of marginally higher switching loss in hard-switched PFC.
Availability
STB21NM60N-1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and motor drive inverters requiring stable component supply across multi-year production cycles.
Supply support for STB21NM60N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC converters and industrial motor controls.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STB21NM60N-1 supports 10 A continuous drain current at TC = 100 °C, as specified in Table 2 of the official datasheet. This derating reflects thermal limits of the I2PAK package and ensures safe operation within the 150 °C maximum junction temperature, assuming proper PCB copper area and heatsinking.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No - the device has a gate threshold voltage (VGS(th)) of 2–4 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended, as the absolute maximum VGS rating is ±25 V but negative bias adds no reliability benefit for this part.
Can STB21NM60N-1 replace STB21NM60N in existing designs?
Yes - both share identical die characteristics, electrical specs, and thermal performance. The only difference is packaging: STB21NM60N uses D2PAK (TO-263) in tape-and-reel, while STB21NM60N-1 uses I2PAK (TO-262) in tube. Footprint and soldering profiles differ, so PCB layout and reflow profile must be validated for the I2PAK variant.
Is this part suitable for use in automotive applications?
No - STB21NM60N-1 is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension, or failure-in-time (FIT) data. ST explicitly states non-automotive grade parts are used at user's own risk in automotive systems; for such applications, consider ST's AEC-Q101 qualified MDmesh™ variants like STL220N6LF7.
STB21NM60N-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 220mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 66 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB21NM60N-1 FAQ
1.How can I place an order for STB21NM60N-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB21NM60N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB21NM60N-1 reliable?
The price and inventory of STB21NM60N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB21NM60N-1 is usually 5 days.
3.What payment methods are accepted for STB21NM60N-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB21NM60N-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB21NM60N-1?
STB21NM60N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB21NM60N-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB21NM60N-1?
For technical support, including STB21NM60N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB21NM60N-1 requirements.
6.How does Aetrix verify that STB21NM60N-1 is sourced from the original manufacturer or authorized distributors?
All STB21NM60N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB21NM60N-1 meets industry standards.
7.What is the process for return or replacement of STB21NM60N-1?
All STB21NM60N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB21NM60N-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB21NM60N-1 part is unused and in its original packaging.
Return procedure for STB21NM60N-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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