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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB21NM60ND

Name: STB21NM60ND
Brand: STMicroelectronics
SKU: STB21NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB21NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB21NM60ND.pdf

Description:: MOSFET N-CH 600V 17A D2PAK

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Product details

Overview

STB21NM60ND from STMicroelectronics is a 600 V, 21 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.22 Ω R_DS(on) max at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It serves as a high-voltage switching element in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB21NM60ND datasheet, STB21NM60ND pinout, STB21NM60ND application, or STB21NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at 21 A DC, thermal performance in TO-220FP with isolated tab, and avalanche energy rating for hard-switching reliability.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between R_DS(on), Q_g, and E_AS. Its 600 V V_DSS supports universal AC input (85–265 V_AC) designs with ≥20% derating, while the 100% E_AS-tested construction ensures single-pulse avalanche capability up to 420 mJ at T_j = 25 °C.

The device features a fully characterized body diode with 45 ns reverse recovery time (t_rr) and 120 A peak diode current rating, enabling use in discontinuous conduction mode (DCM) flyback and resonant LLC topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports 400 V DC bus with 50% safety margin for surge immunity in industrial AC-DC converters.
R_DS(on) max	0.22 Ω @ V_GS = 10 V - Enables ≤10 W conduction loss at 21 A, critical for thermally constrained TO-220FP layouts.
Q_g	45 nC - Determines gate driver power requirement; compatible with standard 1 A peak drivers in 100–300 kHz SMPS.
E_AS	420 mJ - Guarantees single-pulse avalanche survival during output short-circuit or transformer saturation events.
t_rr	45 ns - Limits diode switching loss and EMI in DCM flyback; avoids need for external fast-recovery diode.
P_D @ T_c = 25 °C	30 W - Defines maximum continuous dissipation with heatsink; requires ≥1.7 °C/W thermal resistance for 125 °C junction limit.

Pinout & Package

TO-220FP package with insulated tab (no electrical connection to drain), vertical mounting orientation, and 3.8 mm creepage/clearance spacing for reinforced isolation in mains-connected applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically isolated metal tab enables direct heatsinking without insulator washer; connected internally to drain only.
Source	Reference node for gate drive and current sensing	Low-inductance source bond wire layout minimizes dV/dt-induced shoot-through risk in half-bridge configurations.
Gate	Control terminal for channel modulation	Threshold voltage V_GS(th) = 2–4 V allows TTL/CMOS-compatible drive; Miller plateau at ~4.5 V simplifies gate timing design.

Key Features

Feature	Design Value
100% avalanche tested	Ensures robustness against inductive switching transients without derating - eliminates need for external clamping in cost-sensitive PFC designs.
Ultra-low gate charge	45 nC reduces driver losses and EMI generation in high-frequency (>200 kHz) operation, improving efficiency by 0.5–1.2% in 65–150 W adapters.
Fast body diode	45 ns t_rr and soft recovery suppress voltage overshoot in flyback snubberless designs, reducing RCD component count.
Enhanced dv/dt immunity	Rated for 4.5 V/ns - prevents false turn-on in high-noise industrial inverters with long PCB traces or unshielded gate routing.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage for 0.75 kW BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET half-bridge; commutated at 8–16 kHz with 120° trapezoidal excitation.

Use Value: 0.22 Ω R_DS(on) limits conduction loss to <1.5 W per phase at 7 A RMS, enabling natural convection cooling.

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Main switching transistor handling 390 V DC bus; operated at 125 kHz with ZVS-assisted turn-on.

Use Value: 45 nC Q_g reduces gate drive loss by 35% vs. legacy 600 V MOSFETs, contributing to >96% full-load efficiency.

LED Streetlight Driver

Industrial UPS Inverter

Use Scenario: Buck-boost LED driver powering 120 W array from 220 V AC mains with active PFC front-end.

IC Role / Device Role / Timing Role: PFC boost switch operating in CCM at 65 kHz; handles 1.2 A average inductor current.

Use Value: 420 mJ E_AS withstands line surges up to 4 kV (1.2/50 μs), eliminating need for MOV derating in outdoor deployments.

Use Scenario: Output H-bridge in 5 kVA online UPS converting 400 V DC battery bank to 230 V AC sine wave.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous rectification stage; switched at 16 kHz with dead-time control.

Use Value: Body diode t_rr = 45 ns enables zero-voltage switching during commutation, cutting switching loss by 22% vs. discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM60N	Same die, TO-220 (non-FP) package; tab electrically connected to drain.	Requires insulating washer and thermal pad; unsuitable for floating heatsink mounting.	Select when mechanical mounting constraints allow non-isolated tab and lower assembly cost is prioritized.
IPP60R190C7	650 V CoolMOS™ P7; R_DS(on) = 0.19 Ω but Q_g = 52 nC; higher price point.	Better conduction loss at light loads due to lower R_DS(on), but increased gate drive loss at high frequency.	Prefer for ultra-high-efficiency 300+ kHz designs where gate loss dominates, not for cost-sensitive 65–100 kHz industrial SMPS.

Compared with STP22NM60N and IPP60R190C7, STB21NM60ND uniquely balances isolated-tab mechanical flexibility, proven avalanche ruggedness, and gate charge optimized for mainstream 65–150 kHz industrial power conversion - making it the default choice for BOM-stable, thermally constrained designs.

Availability

STB21NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, LED streetlight drivers, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for STB21NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB21NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in cost-sensitive industrial and lighting applications.

FAQ

What is the maximum recommended case temperature for continuous operation?

The STB21NM60ND is rated for continuous operation up to T_c = 100 °C with appropriate heatsinking. At this case temperature, the junction temperature remains within the 150 °C absolute maximum when dissipating ≤18 W, based on its 1.7 °C/W R_θJC specification and derated power curve.

Does the TO-220FP package require an insulating thermal pad?

No - the TO-220FP package features an electrically isolated metal tab, so no insulating pad is required when mounting to a grounded heatsink. This eliminates thermal interface resistance from pads and simplifies mechanical assembly while maintaining safety isolation per IEC 62368-1.

Can STB21NM60ND replace STP22NM60N in existing designs?

Yes, with mechanical verification: both share identical die characteristics and pinout, but STB21NM60ND's isolated tab allows direct heatsink mounting without insulation. PCB footprint and soldering profile are identical; only heatsink mounting hardware differs.

What is the typical gate threshold voltage range?

The gate threshold voltage V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 μA. At room temperature and 10 V gate drive, the device achieves full enhancement with R_DS(on) ≤ 0.22 Ω, supporting reliable switching with standard 3.3 V or 5 V logic-level gate drivers when used with appropriate gate resistors.

STB21NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB21NM60ND FAQ

1.How can I place an order for STB21NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STB21NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB21NM60ND reliable?

The price and inventory of STB21NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB21NM60ND is usually 5 days.

3.What payment methods are accepted for STB21NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB21NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB21NM60ND?

STB21NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB21NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB21NM60ND?

For technical support, including STB21NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB21NM60ND requirements.

6.How does Aetrix verify that STB21NM60ND is sourced from the original manufacturer or authorized distributors?

All STB21NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB21NM60ND meets industry standards.

7.What is the process for return or replacement of STB21NM60ND?

All STB21NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB21NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB21NM60ND part is unused and in its original packaging.

Return procedure for STB21NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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