Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB22N60M6

Name: STB22N60M6
Brand: STMicroelectronics
SKU: STB22N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STB22N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB22N60M6.pdf

Description:: MOSFET N-CH 600V 15A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:107

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STB22N60M6 from STMicroelectronics is an N-channel 600 V, 15 A MDmesh M6 superjunction power MOSFET in D²PAK (TO-263) package, featuring 196 mΩ typical R_DS(on), 20 nC total gate charge, and 100% avalanche-tested ruggedness for high-efficiency switching in LLC and boost PFC converters.

For engineers reviewing the STB22N60M6 datasheet, STB22N60M6 pinout, STB22N60M6 application, or STB22N60M6 equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt capability, 230 mΩ max R_DS(on) at 10 V_GS, Zener-protected gate, and 2.9 A repetitive avalanche current rating under constrained pulse conditions.

Technical Context

This MOSFET implements ST's MDmesh M6 technology-optimized for high-voltage switching with reduced switching losses and lower R_DS(on) per die area versus prior MDmesh generations. Its low gate input resistance (4.7 Ω intrinsic) and 800 pF input capacitance support fast, controllable turn-on/turn-off transitions.

The device integrates a robust body diode with 1.6 V forward voltage at 15 A and 217 ns reverse recovery time (T_j = 25 °C), enabling reliable operation in hard-switched and resonant topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC-link LLC and boost PFC stages
R_DS(on) max	230 mΩ - enables <1.5 W conduction loss at 15 A continuous drain current
Q_g	20 nC - allows efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz
E_AS	230 mJ - provides single-pulse unclamped inductive energy handling up to 2.9 A avalanche current
T_j max	150 °C - ensures thermal margin for sealed or convection-limited industrial enclosures
C_oss eq.	181 pF - reduces capacitive switching loss during zero-voltage transition in resonant converters
dv/dt ruggedness	100 V/ns - withstands fast voltage transients in high-frequency half-bridge configurations

Pinout & Package

D²PAK (TO-263) package: thermally enhanced surface-mount outline with exposed drain tab (pin 2) for direct PCB heatsinking; 3-pin configuration with gull-wing leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-impedance control terminal requiring ≤10 V_GS for full enhancement; Zener-protected against ±25 V transients
2 (TAB/D)	Drain (exposed tab)	Main high-voltage power path; electrically connected to PCB copper pour for thermal dissipation (R_thJC = 0.96 °C/W)
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch node or ground return path

Key Features

Feature	Design Value
MDmesh M6 silicon process	Delivers 23% lower R_DS(on) per mm² vs MDmesh M5, reducing die size and cost for same performance
100% avalanche tested	Guarantees minimum 2.9 A repetitive avalanche current and 230 mJ single-pulse energy survival
Zener-protected gate	Integrates on-chip 25 V Zener clamp to prevent gate oxide rupture during ESD or transient overvoltage
Low C_iss/C_oss ratio	800 pF / 52.6 pF ratio improves Miller effect immunity and enables stable high-speed switching
Optimized body diode	217 ns t_rr and 1.99 µC Q_rr minimize commutation loss and ringing in bridge-leg applications

Applications

LLC Resonant Converter

Boost PFC Stage

Use Scenario: Primary-side half-bridge switch in 300–500 W server PSU operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side and low-side synchronous switch managing resonant tank current and zero-voltage switching transitions.

Use Value: 230 mΩ R_DS(on) and 20 nC Q_g reduce combined conduction + switching loss by ≥18% vs legacy 600 V MOSFETs.

Use Scenario: Active boost switch in universal-input (90–264 VAC) front-end PFC stage delivering 1 kW.

IC Role / Device Role / Timing Role: Fast-turning main switching element controlling inductor current and shaping AC line input current.

Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during high di/dt transitions; 15 A I_D sustains peak currents without derating.

Industrial Motor Drive Inverter

Telecom Rectifier Module

Use Scenario: 3-phase inverter leg in 750 W HVAC blower drive with space-constrained heatsink.

IC Role / Device Role / Timing Role: Low-side switching device in IGBT/MOSFET hybrid topology handling PWM-modulated phase current.

Use Value: 0.96 °C/W R_thJC and exposed drain tab enable direct thermal coupling to aluminum baseplate, limiting T_j rise to <65 °C at 9.5 A continuous.

Use Scenario: Primary switch in 48 V telecom rectifier with 300 kHz fixed-frequency operation and high reliability requirement.

IC Role / Device Role / Timing Role: Main power switch subjected to repeated 400 V bus transients and lightning surge events.

Use Value: 100% avalanche testing and 600 V V_(BR)DSS ensure no failure under 1.2/50 µs surge waveforms up to 1.5 kV.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	190 mΩ R_DS(on) max, 650 V rating, TO-220FP package, higher C_oss (195 pF)	Lacks Zener gate protection; requires external clamping; lower thermal performance (R_thJC = 1.2 °C/W)	Prefer when board-level gate protection is already implemented and TO-220 mounting is required.
STW22N60M6	Identical electrical specs but TO-247 package; 0.45 °C/W R_thJC; larger footprint; higher creepage	Better thermal headroom for >20 A pulsed loads; unsuitable for ultra-thin or double-sided PCB layouts	Select when junction temperature must stay <125 °C under sustained 12 A load without forced air.

Compared with IPP60R190C7 and STW22N60M6, STB22N60M6 uniquely balances low-profile D²PAK packaging, integrated gate Zener protection, and industry-leading R_DS(on)/Q_g ratio-making it optimal for space-constrained, high-reliability 400–600 V switching where thermal interface design is tightly controlled.

Availability

STB22N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC stages, and industrial motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB22N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STB22N60M6 belongs to the MDmesh M6 family-engineered specifically for high-efficiency, high-frequency SMPS topologies including resonant LLC, active clamp forward, and continuous conduction mode (CCM) PFC.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB22N60M6 supports 9.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12827. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries when mounted on 2-oz copper FR-4 PCB.

Does this MOSFET require an external gate resistor for stability?

A gate resistor of 4.7 Ω is recommended per Figure 13 test circuit and Table 6 switching time measurements. This value balances switching speed (13.6 ns t_d(on)) and gate oscillation suppression, especially with PCB trace inductance above 10 nH.

Can STB22N60M6 replace older MDmesh devices like STP22N60M2?

Yes-STB22N60M6 offers 30% lower R_DS(on) and improved switching efficiency versus STP22N60M2, with identical 600 V rating and D²PAK footprint. Gate threshold remains compatible (3.25–4.75 V), enabling drop-in replacement in existing layouts with minor gate drive tuning.

Is the body diode suitable for synchronous rectification?

No-the integrated body diode is optimized for freewheeling and clamping, not synchronous rectification. Its 1.6 V forward voltage and 217 ns t_rr result in higher conduction and recovery losses than discrete Schottky or GaN FETs; use only in non-synchronous or quasi-resonant topologies.

STB22N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 230mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB22N60M6 FAQ

1.How can I place an order for STB22N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB22N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB22N60M6 reliable?

The price and inventory of STB22N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB22N60M6 is usually 5 days.

3.What payment methods are accepted for STB22N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB22N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB22N60M6?

STB22N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB22N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB22N60M6?

For technical support, including STB22N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB22N60M6 requirements.

6.How does Aetrix verify that STB22N60M6 is sourced from the original manufacturer or authorized distributors?

All STB22N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB22N60M6 meets industry standards.

7.What is the process for return or replacement of STB22N60M6?

All STB22N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STB22N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB22N60M6 part is unused and in its original packaging.

Return procedure for STB22N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…