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STMicroelectronics STB22NM60N
- Part No.:
- STB22NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB22NM60N.pdf
- Description:
- MOSFET N-CH 600V 16A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,817
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Product details
Overview
STB22NM60N from STMicroelectronics is an N-channel 600 V, 200 mΩ typ. (220 mΩ max), 16 A MDmesh™ II Power MOSFET in TO-220FP package, designed for high-efficiency switching converters requiring low gate charge (44 nC) and robust avalanche capability (300 mJ). It serves as a primary high-side switch in PFC stages and resonant LLC half-bridge topologies.
For engineers reviewing the STB22NM60N datasheet, STB22NM60N pinout, STB22NM60N application, or STB22NM60N equivalent, key selection criteria include its 600 V VDS, 200 mΩ RDS(on) at VGS = 10 V, 44 nC total gate charge, 15 V/ns dv/dt immunity, and 100% avalanche-tested reliability under unclamped inductive load conditions.
Technical Context
This device employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 1330 pF input capacitance (Ciss) and 4.7 Ω gate input resistance enable fast, controllable turn-on/turn-off with minimal drive power.
The integrated body diode exhibits 296 ns reverse recovery time (trr) and 4.0 µC reverse recovery charge (Qrr) at ISD = 16 A, supporting hard-switched and quasi-resonant topologies without external snubbers in many cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Supports 400 V AC input PFC and 380 V DC bus systems with 20% margin. |
| RDS(on) max | 220 mΩ at VGS = 10 V, TC = 25 °C - Enables <1.76 W conduction loss at 16 A DC. |
| Qg | 44 nC - Allows efficient gate driving with standard 1 A peak drivers at 100–300 kHz. |
| EAS | 300 mJ - Guarantees single-pulse avalanche ruggedness without derating in flyback or LLC fault conditions. |
| dv/dt immunity | 15 V/ns - Prevents spurious turn-on during high-speed switching in noisy industrial environments. |
| RthJC | 4.17 °C/W (TO-220FP) - Enables 7.2 W continuous dissipation at TC = 100 °C before junction exceeds 150 °C. |
Pinout & Package
STB22NM60N is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The plastic body provides creepage/clearance compliance per IEC 60950-1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain | Electrically connected to metal tab - must be isolated from chassis unless referenced to system ground. |
| G (Pin 1) | Gate | High-impedance control terminal - requires low-inductance PCB routing and gate resistor (4.7 Ω typical) to damp ringing. |
| S (Pin 3) | Source | Reference node for gate drive and current sensing - ties to power ground plane with minimal loop area. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by 35% vs. first-gen devices, cutting switching + conduction loss trade-off. |
| 100% avalanche tested | Each unit validated for EAS ≥ 300 mJ - eliminates need for external clamping in cost-sensitive offline SMPS designs. |
| Low Coss eq. (181 pF) | Minimizes capacitive turn-off loss and improves light-load efficiency in ZVS/ZCS topologies. |
| 4.7 Ω gate input resistance | Stabilizes gate waveform without external series resistor in many 100–200 kHz applications. |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Inverter |
|---|---|
Use Scenario: High-density 3 kW server power supply operating in continuous conduction mode (CCM) PFC stage. IC Role / Device Role / Timing Role: High-side switching element in boost PFC circuit, switching at 65–100 kHz with synchronous rectification. Use Value: 200 mΩ RDS(on) and 44 nC Qg reduce total losses by 1.2 W vs. legacy 250 mΩ MOSFETs, enabling 96.2% efficiency at full load. |
Use Scenario: 7.5 kW variable-frequency drive feeding 3-phase induction motor in HVAC compressor. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 2-level inverter leg, operating at 8 kHz with active Miller clamp. Use Value: 600 V rating and 15 V/ns dv/dt immunity prevent false triggering during fast IGBT commutation transients. |
| Solar Microinverter DC-DC Stage | EV Onboard Charger Boost Converter |
Use Scenario: 300–800 V DC input boost converter in single-phase microinverter with MPPT control. IC Role / Device Role / Timing Role: Main power switch in interleaved dual-phase boost, switching at 150 kHz with zero-voltage switching. Use Value: Low Coss eq. (181 pF) enables reliable ZVS down to 20% load, maintaining >97% conversion efficiency across wide input range. |
Use Scenario: 400 V nominal boost stage in 6.6 kW OBC converting AC grid to 400–450 V DC battery bus. IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology, handling 16 A RMS drain current continuously. Use Value: 10 A ID at TC = 100 °C and 4.17 °C/W RthJC allow thermal design with passive heatsink only, reducing system cost and noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP22NM60N | Same die, TO-220 (non-insulated tab); RthJC = 1.0 °C/W; no internal insulation. | Requires insulating pad/mica sheet when mounted to shared heatsink; higher thermal performance but added BOM cost. | Select when thermal priority outweighs isolation simplicity and board space is constrained. |
| IPP60R220C6 | Infineon CoolMOS™ C6; 600 V, 220 mΩ, 42 nC Qg; lower Coss (120 pF) but no 100% avalanche test guarantee. | Better light-load ZVS behavior but requires external avalanche protection in unclamped inductive circuits. | Select for ultra-high-frequency (>300 kHz) resonant converters where Coss dominates loss profile. |
Compared with STP22NM60N, STB22NM60N trades 3.17 °C/W higher junction-to-case thermal resistance for simplified mechanical integration; compared with IPP60R220C6, it offers verified avalanche ruggedness at the expense of slightly higher Coss, making it preferred for industrial UPS and solar inverters where fault tolerance is non-negotiable.
Availability
STB22NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.
Supply support for STB22NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
STB22NM60N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in mission-critical industrial and renewable energy systems.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STB22NM60N supports 10 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6334 Rev 6. This rating assumes proper heatsinking and accounts for RDS(on) increase with junction temperature, enabling reliable operation in enclosed industrial enclosures without forced air.
Does STB22NM60N have an integrated body diode, and what are its recovery characteristics?
Yes, it features a monolithic source-drain body diode with trr = 296 ns and Qrr = 4.0 µC at ISD = 16 A, VDD = 60 V, and di/dt = 100 A/µs. These values are measured under standardized inductive load conditions and support moderate-frequency hard-switching without external snubbers.
Can STB22NM60N replace STP22NM60N in existing designs without layout changes?
No - STB22NM60N uses TO-220FP (insulated tab), while STP22NM60N uses TO-220 (conductive tab). Direct replacement requires verifying heatsink isolation, adjusting mounting hardware, and revalidating creepage/clearance. Electrical specs are identical, but mechanical integration differs.
Is STB22NM60N compliant with RoHS and REACH regulations?
Yes, STB22NM60N is manufactured in ST's ECOPACK®-compliant TO-220FP package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC screening. Full compliance documentation is available via ST's quality portal using order code STB22NM60N.
STB22NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 220mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB22NM60N FAQ
1.How can I place an order for STB22NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB22NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB22NM60N reliable?
The price and inventory of STB22NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB22NM60N is usually 5 days.
3.What payment methods are accepted for STB22NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB22NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB22NM60N?
STB22NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB22NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB22NM60N?
For technical support, including STB22NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB22NM60N requirements.
6.How does Aetrix verify that STB22NM60N is sourced from the original manufacturer or authorized distributors?
All STB22NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB22NM60N meets industry standards.
7.What is the process for return or replacement of STB22NM60N?
All STB22NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB22NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB22NM60N part is unused and in its original packaging.
Return procedure for STB22NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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