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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB22NS25ZT4

Name: STB22NS25ZT4
Brand: STMicroelectronics
SKU: STB22NS25ZT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB22NS25ZT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB22NS25ZT4.pdf

Description:: MOSFET N-CH 250V 22A D2PAK

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Product details

Overview

STB22NS25Z from STMicroelectronics is an N-channel 250V Zener-protected Power MOSFET in D²PAK package, featuring R_DS(on) < 0.15 Ω at V_GS = 10 V, 22 A continuous drain current at T_C = 25°C, and 100% avalanche tested for robustness in lighting converters and industrial switching applications.

For engineers reviewing the STB22NS25Z datasheet, STB22NS25Z pinout, STB22NS25Z application, or STB22NS25Z equivalent, this device is selected for high-voltage DC-DC conversion, LED driver half-bridge stages, and ESD-hardened power switches where dv/dt immunity (5 V/ns) and integrated gate-source Zener protection (20 V) are critical.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ process with patented STrip layout and edge termination, enabling high-voltage ruggedness and low conduction loss. Its internal source-drain diode supports synchronous rectification with t_rr = 292 ns and Q_rr = 3065 nC at 150°C.

The built-in back-to-back gate-source Zener diodes (BVGSO = 20 V) provide transient overvoltage clamping without external components, while the 2500 V HBM ESD rating ensures handling safety. Safe operating area (SOA) is validated up to 22 A repetitive avalanche current and 350 mJ single-pulse energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands 250 V drain-source blocking voltage under zero-gate conditions.
R_DS(on)	<0.15 Ω - Ensures low conduction loss at 11 A and 10 V gate drive, minimizing thermal stress.
I_D (cont.)	22 A @ T_C = 25°C - Supports high-current switching in compact heatsinked designs.
Q_g	108 nC - Determines gate drive power requirement; enables efficient 100 kHz+ switching with moderate gate resistance.
dv/dt	5 V/ns - High immunity to false turn-on during fast voltage transients in inductive loads.
E_AS	350 mJ - Absorbs unclamped inductive energy without failure, simplifying snubber design.
R_thj-case	0.93 °C/W - Enables direct mounting to heatsink for thermal management in high-power lighting drivers.

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; protected by integrated 20 V Zener diode.
2 (D)	Drain	Main high-side power terminal; electrically connected to exposed metal tab for thermal path and high-current routing.
3 (S)	Source	Power return and reference node; forms common node with gate drive return in half-bridge layouts.

Key Features

Feature	Design Value
Zener-protected gate	Integrated 20 V bidirectional gate-source Zener eliminates need for external clamping diodes.
100% avalanche rated	Guaranteed 22 A repetitive avalanche current and 350 mJ single-pulse energy withstand capability.
High dv/dt immunity	5 V/ns rated slope prevents spurious turn-on during fast voltage transitions in SMPS.
MESH OVERLAY™ process	Enables 250 V breakdown with sub-0.15 Ω R_DS(on), optimizing conduction vs. voltage trade-off.
ECOPACK® compliant	Lead-free second-level interconnect and RoHS-compliant packaging for environmental compliance.

Applications

LED Driver Half-Bridge

Industrial DC-DC Converter

Use Scenario: High-efficiency constant-current LED driver using synchronous buck-boost topology with 200–240 VAC input rectified to ~340 VDC bus.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, switching at 100–250 kHz with hard commutation.

Use Value: Integrated Zener protection and 5 V/ns dv/dt immunity prevent gate oxide failure during bus transients and diode reverse recovery spikes.

Use Scenario: 48 V to 12 V isolated forward converter in factory automation control cabinet with wide ambient temperature range.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 22 A peak currents and repetitive avalanche stress during reset cycles.

Use Value: 350 mJ E_AS rating and 0.93 °C/W R_thj-case allow reliable operation without active cooling under full load.

Ballast Electronic Control Gear

Motor Drive Inverter Stage

Use Scenario: High-frequency electronic ballast for T5/T8 fluorescent lamps operating at 25–60 kHz with resonant ignition.

IC Role / Device Role / Timing Role: Main switching element in series-resonant inverter stage, conducting 22 A RMS current with high di/dt.

Use Value: 292 ns reverse recovery time and 21 A I_RRM of internal body diode reduce switching losses and EMI during zero-voltage switching transitions.

Use Scenario: 3-phase inverter output stage for 750 W BLDC motor in HVAC blower system with regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg power switch subjected to shoot-through risk and inductive flyback voltage spikes.

Use Value: 2500 V HBM ESD rating and 100% avalanche testing ensure field reliability against gate damage and drain overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NS25Z	Same die, TO-220 package; higher R_thj-amb (62.5 °C/W vs. 40 °C/W typical for D²PAK on PCB); no tape-and-reel option.	Better suited for prototyping or low-volume through-hole assembly; less suitable for automated SMT production.	Select when manual soldering or heatsink mounting without thermal pad is preferred.
IPP220N25N3 G	250 V, 22 A, R_DS(on) = 0.125 Ω; Infineon OptiMOS™ 3; no integrated Zener; lower Q_g (72 nC).	Requires external gate protection; optimized for higher-frequency PWM but lacks built-in transient resilience.	Select when gate drive efficiency is prioritized and external clamping is acceptable.

Compared with STP22NS25Z, STB22NS25Z offers superior thermal performance in SMT layouts and tape-and-reel compatibility; versus IPP220N25N3 G, it trades slightly higher Q_g for integrated Zener protection and guaranteed avalanche ruggedness-critical in lighting and industrial environments with unpredictable transients.

Availability

STB22NS25Z is available at Aetrix Electronics and suitable for LED driver half-bridges, industrial DC-DC converters, and electronic ballast control gear requiring stable component supply and long-term manufacturability.

Supply support for STB22NS25Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for automotive, industrial, and consumer markets.

This device belongs to ST's MESH OVERLAY™ Power MOSFET product line, engineered specifically for high-voltage, high-reliability switching in lighting, power supplies, and motor control where avalanche ruggedness and ESD hardness are non-negotiable.

FAQ

What is the maximum safe gate-source voltage for STB22NS25Z?

The absolute maximum V_GS is ±20 V, enforced by internal back-to-back Zener diodes with BVGSO = 20 V. This allows direct interfacing with standard 15 V gate drivers without external clamping, and protects against ESD events up to 2500 V HBM.

Can STB22NS25Z be used in avalanche mode continuously?

No - the device is 100% tested for repetitive avalanche, but only up to I_AR = 22 A and within SOA limits. Continuous avalanche operation exceeds thermal design limits; it is intended for fault-energy absorption during transient overloads, not steady-state conduction.

Is the D²PAK drain tab electrically isolated?

No - the exposed metal pad on the D²PAK package is internally connected to the drain terminal. It must be electrically insulated from the heatsink unless the heatsink is referenced to drain potential, and thermally bonded using dielectric thermal interface material if isolation is required.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.6 V at 22 A and t_rr = 292 ns - slower and higher forward drop than Schottky alternatives. It is suitable for freewheeling in non-synchronous topologies but not recommended for high-frequency synchronous rectification where <100 ns recovery is needed.

STB22NS25ZT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MESH OVERLAY™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 151 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB22NS25ZT4 FAQ

1.How can I place an order for STB22NS25ZT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB22NS25ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB22NS25ZT4 reliable?

The price and inventory of STB22NS25ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB22NS25ZT4 is usually 5 days.

3.What payment methods are accepted for STB22NS25ZT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB22NS25ZT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB22NS25ZT4?

STB22NS25ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB22NS25ZT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB22NS25ZT4?

For technical support, including STB22NS25ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB22NS25ZT4 requirements.

6.How does Aetrix verify that STB22NS25ZT4 is sourced from the original manufacturer or authorized distributors?

All STB22NS25ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB22NS25ZT4 meets industry standards.

7.What is the process for return or replacement of STB22NS25ZT4?

All STB22NS25ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB22NS25ZT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB22NS25ZT4 part is unused and in its original packaging.

Return procedure for STB22NS25ZT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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