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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB23N80K5

Name: STB23N80K5
Brand: STMicroelectronics
SKU: STB23N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB23N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB23N80K5.pdf

Description:: MOSFET N-CH 800V 16A D2PAK

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Product details

Overview

STB23N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, rated for 800 V V_DS, 230 mΩ typ. R_DS(on) at V_GS = 10 V and 8 A, 16 A continuous drain current (T_C = 25 °C), and 190 W total power dissipation. It delivers ultra-low gate charge (33 nC) and very low figure of merit for high-efficiency switching in offline SMPS and industrial motor drives.

For engineers reviewing the STB23N80K5 datasheet, STB23N80K5 pinout, STB23N80K5 application, or STB23N80K5 equivalent, key selection criteria include its 800 V breakdown voltage, 100% avalanche-tested ruggedness, Zener-protected gate, D²PAK package thermal performance (R_thJC = 0.66 °C/W), and diode recovery characteristics (t_rr = 410 ns at T_J = 25 °C).

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to simultaneously reduce R_DS(on) and gate charge-achieving 230 mΩ typ. at 800 V with only 33 nC total gate charge. Its optimized capacitance profile (C_iss = 1000 pF, C_oss = 65 pF, C_rss = 1.5 pF) enables fast, low-loss switching under hard-switching conditions.

The integrated source-drain diode features 16 A continuous conduction capability, 1.5 V forward voltage at 16 A, and controlled reverse recovery (Q_rr = 7 µC, I_RRM = 34 A) suitable for quasi-resonant and LLC topologies. The device is 100% tested for unclamped inductive switching (UIS) up to 400 mJ at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input AC-DC converters up to 400 V RMS line.
R_DS(on) max	280 mΩ - ensures <1.8 W conduction loss at 16 A DC, enabling compact heatsink design.
Q_g	33 nC - reduces gate drive power and enables >100 kHz operation with standard 1-A drivers.
E_AS	400 mJ - provides robustness against transient overloads without external snubbers in flyback/LLC.
t_rr	410 ns - limits diode switching loss and EMI in synchronous rectification and resonant circuits.
R_thJC	0.66 °C/W - allows 190 W dissipation with ≤125 °C junction rise above case, supporting high-power density layouts.
V_GS(th)	3–5 V - ensures reliable turn-on with standard 5-V or 3.3-V logic-level controllers.

Pinout & Package

STB23N80K5 is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for enhanced thermal transfer. The package meets ECOPACK environmental compliance standards and is supplied in tape-and-reel format.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain (main power terminal)	Electrically connected to the metal tab; must be soldered to large copper pour for thermal and electrical integrity.
G (Pin 1)	Gate	High-impedance control input; requires low-inductance routing and gate resistor (4.7 Ω typical) to damp ringing.
S (Pin 3)	Source	Reference node for gate drive and current sensing; connects to power ground plane with minimal loop area.

Key Features

Feature	Design Value
MDmesh K5 vertical superjunction structure	Reduces R_DS(on) × Q_g FoM by >40% vs. prior-generation 800 V MOSFETs, improving efficiency at 65–150 kHz.
Zener-protected gate	Integrated ±30 V gate-source clamp prevents ESD damage and overvoltage failure during layout or hot-swap events.
100% UIS avalanche tested	Each unit validated for single-pulse energy up to 400 mJ, eliminating need for derating in inductive load applications.
Low C_rss/C_iss ratio (1.5/1000 pF)	Minimizes Miller effect, enabling stable high-dV/dt operation (>50 V/ns) without spurious turn-on.
Optimized body diode	Soft reverse recovery (Q_rr = 7 µC, t_rr = 410 ns) reduces EMI and stress on synchronous rectifiers in LLC converters.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Primary-side switch in 1–3 kW isolated DC-DC converters feeding 48 V or 54 V intermediate bus systems.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–130 kHz with zero-voltage switching (ZVS) in phase-shifted full-bridge topology.

Use Value: 230 mΩ R_DS(on) and 33 nC Q_g enable >95% efficiency at full load while maintaining <85 °C case temperature on 2-oz FR-4 PCB.

Use Scenario: Active clamp flyback or asymmetrical half-bridge in 500–1000 W telecom rectifiers with universal AC input.

IC Role / Device Role / Timing Role: Main switching element handling 800 V blocking and 16 A peak current during burst-mode and continuous conduction.

Use Value: 400 mJ E_AS rating eliminates need for external clamping circuits, reducing BOM count and board space by 12%.

EV Onboard Chargers

Industrial PLC Power Supplies

Use Scenario: PFC boost switch in two-stage OBC designs delivering 6.6 kW AC-to-DC conversion.

IC Role / Device Role / Timing Role: Fast-switching, high-reliability MOSFET operating at 65–100 kHz with active thermal management.

Use Value: R_thJC = 0.66 °C/W and 150 °C max T_J allow sustained 16 A operation under 40 °C ambient with forced air cooling.

Use Scenario: Input stage switch in DIN-rail mounted 24 V/48 V industrial power supplies with surge immunity requirements.

IC Role / Device Role / Timing Role: Rugged main switch handling repetitive 4 kV/2 kA surge transients per IEC 61000-4-5.

Use Value: 100% avalanche testing and Zener gate protection ensure >10-year field reliability in harsh factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N80K5	Same MDmesh K5 process, but 20 A/220 mΩ R_DS(on) max, 170 W P_TOT, identical 800 V rating and D²PAK package.	Lower current rating suits 1–1.5 kW designs where thermal margin is constrained; slightly lower Q_g (28 nC) improves light-load efficiency.	Select when system peak current stays below 14 A and board space limits heatsink size.
IPP60R190C7	Infineon CoolMOS C7, 600 V rating, 190 mΩ R_DS(on), 31 nC Q_g, TO-220FP package, no integrated Zener gate protection.	Limited to 380 V AC mains; lacks 100% UIS test and avalanche energy spec; higher R_thJC (1.2 °C/W) demands larger heatsink.	Consider only for cost-sensitive 600 V designs where avalanche robustness is secondary and gate drive isolation is implemented externally.

Compared with STW20N80K5, STB23N80K5 offers +3 A current headroom and +20 W power handling for same footprint; versus IPP60R190C7, it provides 200 V higher blocking voltage, integrated gate protection, and proven 400 mJ avalanche capability-critical for industrial and EV infrastructure reliability.

Availability

STB23N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, EV onboard chargers, and PLC power supplies requiring stable component supply across multi-year production cycles.

Supply support for STB23N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STB23N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 800 V offline power conversion systems including telecom rectifiers, industrial PSUs, and EV charging infrastructure.

FAQ

What is the maximum safe operating junction temperature for STB23N80K5?

The STB23N80K5 has a specified operating junction temperature range of –55 °C to 150 °C. Continuous operation at 150 °C requires strict thermal design: R_thJC = 0.66 °C/W mandates ≤125 °C case-to-ambient rise for 190 W dissipation, achievable only with direct-tab mounting to ≥10 cm² copper area and forced airflow.

Does STB23N80K5 require external gate protection?

No-STB23N80K5 integrates a Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external TVS diodes in most applications, though a series gate resistor (4.7 Ω) remains essential to control dV/dt-induced turn-on and suppress oscillation during fast switching.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode delivers 1.5 V forward voltage at 16 A and 410 ns reverse recovery time at 25 °C-superior to standard silicon diodes but higher V_F than 45 V Schottkys. It is not intended for synchronous rectification; instead, its soft recovery minimizes EMI in hard-switched topologies where external diodes would increase complexity and cost.

Can STB23N80K5 replace older STP22N80 or STW22N80 devices?

Yes-STB23N80K5 is a direct upgrade: it matches the 800 V rating and D²PAK package of STP22N80/STW22N80 but improves R_DS(on) by 25% (280 → 230 mΩ typ.), cuts Q_g by 30% (47 → 33 nC), and adds 100% UIS testing and Zener gate protection. No PCB redesign is needed; gate drive and thermal layout remain compatible.

STB23N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB23N80K5 FAQ

1.How can I place an order for STB23N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB23N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB23N80K5 reliable?

The price and inventory of STB23N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB23N80K5 is usually 5 days.

3.What payment methods are accepted for STB23N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB23N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB23N80K5?

STB23N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB23N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB23N80K5?

For technical support, including STB23N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB23N80K5 requirements.

6.How does Aetrix verify that STB23N80K5 is sourced from the original manufacturer or authorized distributors?

All STB23N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB23N80K5 meets industry standards.

7.What is the process for return or replacement of STB23N80K5?

All STB23N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STB23N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB23N80K5 part is unused and in its original packaging.

Return procedure for STB23N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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