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STMicroelectronics STB23NM50N
- Part No.:
- STB23NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB23NM50N.pdf
- Description:
- MOSFET N-CH 500V 17A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,049
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Product details
Overview
STB23NM50N from STMicroelectronics is an N-channel 500 V, 17 A Power MOSFET in D²PAK (TO-263) package, featuring 162 mΩ typical RDS(on), 45 nC total gate charge, and 100% avalanche tested ruggedness. It employs MDmesh™ II vertical strip technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB23NM50N datasheet, STB23NM50N pinout, STB23NM50N application, or STB23NM50N equivalent, key selection criteria include its 500 V VDS, low Ciss (1330 pF), fast switching (td(off) = 71 ns), integrated body diode with 286 ns trr, and thermal resistance RthJC = 1 °C/W in D²PAK.
Technical Context
This MOSFET uses ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize both conduction loss (RDS(on)) and switching loss (Qg, Coss). Its 150 °C max junction temperature and 2.5 kV isolation rating support robust operation in high-voltage AC/DC converters.
The device integrates a fast-recovery body diode (trr = 286 ns at 25 °C, 350 ns at 150 °C) with low Qrr (3.7 µC), enabling hard-switched topologies without external snubbers. Gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 VAC input rectified systems with 20% margin for surge and ringing. |
| RDS(on) typ. | 162 mΩ at VGS = 10 V, ID = 8.5 A - enables <1.4 W conduction loss at 17 A continuous drain current. |
| Qg | 45 nC - determines gate drive power requirement and influences switching speed in 100–500 kHz converters. |
| Ciss | 1330 pF at VDS = 50 V - impacts EMI filtering design and gate driver slew rate capability. |
| trr | 286 ns at TJ = 25 °C - limits reverse recovery loss in bridge-leg configurations and reduces shoot-through risk. |
| RthJC | 1 °C/W - allows 125 W power dissipation with ≤125 °C case-to-junction rise, critical for thermally constrained PCB layouts. |
| EAS | 254 mJ - supports unclamped inductive switching events without failure, enhancing system reliability. |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab on underside for direct heatsinking; 3-pin surface-mount outline conforming to ECOPACK® environmental compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain | High-side switching node; electrically connected to metal tab - must be isolated from heatsink unless referenced to same potential. |
| G | Gate | Control terminal; requires 10 V drive for full enhancement; 4.6 Ω intrinsic gate resistance affects turn-on/off timing. |
| S | Source | Power return path and gate reference; connects to PCB ground plane; source inductance directly impacts switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche rated | Guarantees single-pulse energy handling up to 254 mJ without degradation - eliminates need for overvoltage clamping in flyback or LLC resonant designs. |
| Low gate charge (Qg = 45 nC) | Reduces gate driver losses and enables use of lower-cost, lower-current drivers in high-frequency (>200 kHz) SMPS. |
| MDmesh™ II vertical structure | Delivers 19% lower RDS(on) vs. first-gen MDmesh at same die size - improves power density in space-constrained adapters and inverters. |
| Fast body diode (trr = 286 ns) | Minimizes reverse recovery loss in synchronous rectification and half-bridge topologies - measurable efficiency gain >0.5% at full load. |
| Isolation voltage (2.5 kV RMS) | Meets reinforced insulation requirements for Class II AC/DC power supplies per IEC 62368-1 - no additional creepage/clearance PCB modifications needed. |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Inverter |
|---|---|
Use Scenario: High-efficiency 1 kW server power supply operating at 100–300 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Main high-side switch in primary-side power conversion stage; handles 500 V DC bus and 17 A peak current. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >95% efficiency at full load without forced air cooling. |
Use Scenario: 3-phase inverter driving 0.75 kW induction motor in HVAC or pump control with 16 kHz PWM carrier. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V-class inverter leg; operates in hard-switched mode with freewheeling via internal diode. Use Value: Avalanche ruggedness and fast trr prevent shoot-through during commutation transients, improving field reliability over 10-year service life. |
| Telecom Rectifier Module | EV Onboard Charger PFC Stage |
Use Scenario: 3 kW telecom rectifier with continuous conduction mode (CCM) boost PFC operating at 65 kHz. IC Role / Device Role / Timing Role: Boost switch subjected to 400 V DC link and 25 A peak inductor current; switched by UCC28070 controller. Use Value: Low Coss (84 pF) and Crss (4.8 pF) minimize capacitive turn-on loss and EMI generation across wide load range. |
Use Scenario: Two-phase interleaved PFC in 6.6 kW EV onboard charger accepting 90–264 VAC input. IC Role / Device Role / Timing Role: High-voltage switch in each PFC channel; synchronized to 100 kHz carrier with zero-voltage switching assist. Use Value: 150 °C TJ(max) and RthJC = 1 °C/W enable compact heatsink design while sustaining 11 A continuous current per phase at 40 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 500 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP23NM50N | Same die, TO-220 package; RthJC = 4.17 °C/W vs. 1 °C/W; higher thermal resistance limits power density. | Preferred for prototyping or low-volume through-hole assembly; unsuitable for high-power density SMT designs. | Select when manual soldering, mechanical mounting flexibility, or legacy board compatibility is required. |
| IPP60R190C7 | 600 V, 190 mΩ, CoolMOS™ C7; lower Qg (33 nC) but higher VGS(th) (3–5 V); not 100% avalanche tested. | Better light-load efficiency in quasi-resonant converters; lacks guaranteed avalanche energy rating for hard-switched PFC. | Choose for ZVS/ZCS topologies where gate drive simplicity and low Qg outweigh ruggedness needs. |
Compared with STP23NM50N, STB23NM50N delivers 4× better thermal performance in SMT form factor; versus IPP60R190C7, it trades slightly higher Qg for certified avalanche robustness essential in industrial UPS and solar inverters.
Availability
STB23NM50N is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, industrial motor drives, and EV onboard chargers requiring stable component supply and long-term manufacturability.
Supply support for STB23NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-voltage, high-efficiency switching power supplies and motor control systems demanding low RDS(on), fast switching, and rugged reliability.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB23NM50N supports 11 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS6645 Rev 5. This derating reflects thermal limitations of the D²PAK package under sustained high-temperature operation and must be verified against actual PCB copper area and heatsink interface resistance.
Does the body diode support synchronous rectification in a flyback converter?
No - the integrated body diode has trr = 286 ns and Qrr = 3.7 µC, making it unsuitable for synchronous rectification where ultra-fast, low-Qrr diodes are required. It is designed for freewheeling and clamping functions in hard-switched topologies, not high-frequency rectification.
Can STB23NM50N replace STP23NM50N on the same PCB footprint?
No - STB23NM50N uses D²PAK (TO-263) with gull-wing leads and exposed drain tab, while STP23NM50N uses TO-220 through-hole package. They are not footprint-compatible; redesign of pad layout, stencil, and thermal vias is required for SMT migration.
What gate resistor value is recommended for 200 kHz switching in a boost PFC?
A 4.7 Ω gate resistor is validated in the datasheet test circuit (Figure 14) for 250 V VDD, 17 A ID, yielding td(on) = 6.6 ns and tf = 29 ns. For 200 kHz PFC, this value balances switching speed and gate oscillation damping; increase to 10 Ω if EMI exceeds limits or ringing is observed.
STB23NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1330 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB23NM50N FAQ
1.How can I place an order for STB23NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB23NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB23NM50N reliable?
The price and inventory of STB23NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB23NM50N is usually 5 days.
3.What payment methods are accepted for STB23NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB23NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB23NM50N?
STB23NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB23NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB23NM50N?
For technical support, including STB23NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB23NM50N requirements.
6.How does Aetrix verify that STB23NM50N is sourced from the original manufacturer or authorized distributors?
All STB23NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB23NM50N meets industry standards.
7.What is the process for return or replacement of STB23NM50N?
All STB23NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB23NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB23NM50N part is unused and in its original packaging.
Return procedure for STB23NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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