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STMicroelectronics STB23NM60N
- Part No.:
- STB23NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB23NM60N.pdf
- Description:
- MOSFET N-CH 600V 19A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,445
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Product details
Overview
STB23NM60N from STMicroelectronics is an N-channel 600 V, 19 A, 0.150 Ω RDS(on) Power MOSFET in D²PAK package, built on second-generation MDmesh™ technology. It delivers ultra-low gate charge (60 nC) and input capacitance for high-efficiency hard-switched SMPS in industrial AC-DC converters and PFC stages.
For engineers reviewing the STB23NM60N datasheet, STB23NM60N pinout, STB23NM60N application, or STB23NM60N equivalent, key selection criteria include avalanche ruggedness (700 mJ EAS), dv/dt immunity (30 V/ns), thermal resistance (Rthj-case = 3.6 °C/W), and TO-263-compatible footprint for high-power density board layout.
Technical Context
This device uses ST's proprietary vertical MDmesh™ structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V VDSS rating supports universal-input offline applications up to 400 V DC bus, while 150 °C Tjmax enables operation in thermally constrained enclosures.
The MOSFET features a fully rated source-drain diode (ISD = 19 A, trr = 470 ns at Tj = 25 °C) with low Qrr (7 µC), enabling efficient synchronous rectification and flyback snubberless designs without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports 400 V DC bus with 50% safety margin in universal-input AC-DC converters |
| RDS(on) max | 0.180 Ω @ VGS = 10 V, ID = 9.5 A - Enables <1.7 W conduction loss at 19 A continuous drain current |
| Qg | 60 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers |
| EAS | 700 mJ - Withstands unclamped inductive switching events in motor drives and UPS inverters |
| tr/tf | 15 ns / 36 ns @ VDD = 300 V, RG = 4.7 Ω - Enables >500 kHz switching in LLC resonant converters |
| Ciss | 2050 pF - Low input capacitance improves voltage-mode control loop stability in high-frequency PWM controllers |
| Tj max | 150 °C - Allows full-rated operation in sealed industrial enclosures without forced airflow |
Pinout & Package
STB23NM60N is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low thermal resistance (Rthj-case = 3.6 °C/W) and serves as the primary heat path to the PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Low input capacitance (2050 pF) and gate resistance (4 Ω) enable fast, low-loss turn-on/turn-off with standard 1-A gate drivers |
| 2 (Drain) | High-side power output | Exposed metal pad electrically connected to drain; requires isolation from heatsink and direct soldering to large copper area for thermal management |
| 3 (Source) | Power return and reference | Common node for gate drive return and current sensing; low-inductance layout critical to suppress ringing during hard switching |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against overvoltage transients in offline SMPS without external clamping circuits |
| Low Qg and Ciss | 60 nC total gate charge and 2050 pF input capacitance reduce switching losses by ≥25% vs. first-gen 600 V MOSFETs |
| MDmesh™ second generation | Vertical superjunction architecture achieves 0.150 Ω·mm² figure-of-merit - industry-leading RDS(on) × area tradeoff |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for green manufacturing |
| Low diode Qrr | 7 µC reverse recovery charge minimizes shoot-through risk and EMI in bridge-leg configurations |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W active clamp forward or LLC resonant converters. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–300 kHz switching frequency. Use Value: 0.150 Ω RDS(on) and 60 nC Qg reduce conduction + switching losses by 18% vs. comparable 600 V MOSFETs, improving efficiency from 92% to 93.5% at full load. |
Use Scenario: Synchronous rectifier in secondary-side 12 V/50 A output stage of telecom rectifier modules. IC Role / Device Role / Timing Role: Low-side N-channel switch replacing Schottky diodes in high-current, high-frequency synchronous rectification. Use Value: 1.3 V VSD and 470 ns trr cut forward conduction loss by 40% and reduce diode recovery noise, easing EMI filter design. |
| Uninterruptible Power Supplies (UPS) | Motor Drive Inverters |
|
Use Scenario: Half-bridge leg in 1–3 kVA online UPS inverter stage operating at 16 kHz PWM. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged power switch managing bidirectional energy flow during battery backup mode. Use Value: 700 mJ single-pulse avalanche energy withstands line surges and short-circuit faults without failure, eliminating need for external crowbar protection. |
Use Scenario: Phase-leg switch in 750 W BLDC motor drive for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in 3-phase inverter bridge with 120° commutation. Use Value: 30 V/ns dv/dt immunity prevents false turn-on during high di/dt commutation, ensuring reliable gate control without Miller clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP23NM60N | Same die, TO-220 package; Rthj-case = 0.83 °C/W vs. 3.6 °C/W; higher peak current capability (76 A pulsed) | Better suited for forced-air-cooled, lower-density designs where through-hole mounting is preferred | Select when thermal budget allows larger heatsink and mechanical mounting favors leaded packages |
| IPP60R190C6 | Infineon CoolMOS™ C6; 0.190 Ω RDS(on), 45 nC Qg, 650 V rating; lower gate charge but higher on-resistance | Optimized for ZVS soft-switching topologies where Qg dominates loss profile over RDS(on) | Prefer for resonant LLC or phase-shifted full-bridge where switching loss > conduction loss |
Compared with STP23NM60N, STB23NM60N trades higher thermal resistance for superior PCB integration and lower assembly cost; versus IPP60R190C6, it delivers lower conduction loss at the expense of slightly higher gate drive demand-making it optimal for hard-switched PFC and forward converters.
Availability
STB23NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and uninterruptible power systems requiring stable component supply across multi-year production cycles.
Supply support for STB23NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
The STB23NM60N belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and telecom infrastructure equipment.
FAQ
What is the maximum continuous drain current for STB23NM60N at 100 °C case temperature?
The maximum continuous drain current is 11.7 A at TC = 100 °C, as specified in Table 2 of the official datasheet. This derating reflects thermal limits of the D²PAK package under realistic PCB cooling conditions, not silicon capability alone.
Does STB23NM60N require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage (VGS(th)) of 2–4 V and is fully enhanced at VGS = 10 V. A gate drive range of 0 V to +12 V is sufficient; negative bias is unnecessary and not recommended per ST's application guidance.
Can STB23NM60N be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (shown in Figure 15) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal mass to maintain <5 °C junction temperature delta between devices.
Is STB23NM60N suitable for automotive applications?
No. ST classifies this part as industrial-grade only. It lacks AEC-Q101 qualification, automotive temperature range (-40 °C to 150 °C junction is supported, but qualification testing is absent), and automotive-specific reliability screening-use only in non-safety-critical industrial systems.
STB23NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2050 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB23NM60N FAQ
1.How can I place an order for STB23NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB23NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB23NM60N reliable?
The price and inventory of STB23NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB23NM60N is usually 5 days.
3.What payment methods are accepted for STB23NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB23NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB23NM60N?
STB23NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB23NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB23NM60N?
For technical support, including STB23NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB23NM60N requirements.
6.How does Aetrix verify that STB23NM60N is sourced from the original manufacturer or authorized distributors?
All STB23NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB23NM60N meets industry standards.
7.What is the process for return or replacement of STB23NM60N?
All STB23NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB23NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB23NM60N part is unused and in its original packaging.
Return procedure for STB23NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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