Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB23NM60ND

Name: STB23NM60ND
Brand: STMicroelectronics
SKU: STB23NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STB23NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB23NM60ND.pdf

Description:: MOSFET N-CH 600V 19.5A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,156

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STB23NM60ND from STMicroelectronics is a 600 V, 23 A, N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 190 mΩ R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness for hard-switching applications in offline SMPS and motor drives.

For engineers reviewing the STB23NM60ND datasheet, STB23NM60ND pinout, STB23NM60ND application, or STB23NM60ND equivalent, this device is selected for high-voltage DC-DC converters requiring low conduction loss, fast switching with controlled EMI, and robust unclamped inductive switching capability under full load conditions.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between R_DS(on), Q_g, and E_oss, enabling efficient operation in continuous conduction mode (CCM) PFC stages and resonant LLC primary switches. Its 600 V V_DSS rating supports universal AC input (85–265 V_AC) designs without derating.

The device features an integrated ultra-fast recovery body diode (t_rr = 75 ns, Q_rr = 120 nC), enabling ZVS-capable topologies and reducing snubber losses in flyback and half-bridge configurations where reverse recovery behavior critically impacts efficiency and thermal stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal offline input with ≥20% voltage margin over peak rectified 375 V.
R_DS(on) max	190 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 23 A DC, suitable for 250–500 W power stages.
Q_g	45 nC - Allows gate drive with standard 1-A peak drivers at 100 kHz without excessive Miller plateau time.
E_oss	120 nJ @ 400 V - Reduces turn-on switching loss in hard-switched topologies; enables >90% efficiency in 300 W adapters.
t_rr	75 ns - Limits diode reverse recovery current spike, easing EMI filter design in high-frequency flyback converters.
P_D (T_c = 25°C)	30 W - Requires heatsink for sustained 23 A operation; thermal resistance R_thJC = 0.83 °C/W enables compact thermal layout.

Pinout & Package

TO-220FP (Full-Pak) package: insulated backside, vertical mounting, no heatsink isolation required; 3-pin through-hole configuration with drain tab electrically connected to pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance source connection; ties directly to PCB ground plane for stable switching node control.
Pin 2 (Drain)	Main high-side power terminal	Internally bonded to metal tab; must be connected to high-voltage bus or transformer primary; provides mechanical anchoring.
Pin 3 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 pF layout capacitance; sensitive to ringing-requires local RC snubber if driving >50 kHz.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees reliable operation under unclamped inductive switching up to I_AR = 23 A, eliminating need for external clamping circuits in relay drivers.
Ultra-Low Q_g/R_DS(on) Ratio	235 nC·Ω - Improves figure-of-merit for high-frequency SMPS, reducing combined conduction + switching loss by ~18% vs. legacy 600 V MOSFETs.
Fast Body Diode (t_rr = 75 ns)	Enables quasi-resonant flyback operation without external Schottky catch diode, cutting BOM count and footprint in compact AC/DC adapters.
Enhanced dV/dt Immunity	Rated for 4.5 V/ns - Prevents spurious turn-on during high dv/dt transients in bridge-leg configurations, improving system reliability without gate resistors >10 Ω.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage for 0.75 kW BLDC pumps operating from 380 V AC mains.

IC Role / Device Role / Timing Role: High-side switching element in six-step commutation; handles 23 A peak phase current with 100 kHz PWM.

Use Value: Low R_DS(on) minimizes thermal rise in enclosed enclosures; avalanche rating eliminates need for freewheeling diode snubbers.

Use Scenario: Active clamp forward converter in 80 PLUS Titanium 1.2 kW server power supply.

IC Role / Device Role / Timing Role: Main switch controlling energy transfer from primary winding; operates at 250 kHz with zero-voltage switching assist.

Use Value: Fast body diode enables clean active clamp reset; low E_oss reduces turn-on loss during ZVS transition.

LED Streetlight Driver

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Constant-current buck-boost LED driver for 150 W outdoor luminaires with wide input range (100–305 V AC).

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in hybrid topology; conducts 18 A RMS with 120 Hz ripple superimposed on 50 kHz switching.

Use Value: Rugged body diode withstands line dips and surges; TO-220FP insulation allows direct heatsink mounting without insulator pads.

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC handling both AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) boost switch operating up to 200 kHz with variable frequency sweep.

Use Value: Low Q_g ensures stable gate drive across full load range; 600 V rating covers worst-case DC link voltage (450 V) with safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	R_DS(on) = 190 mΩ, but higher Q_g (52 nC); CoolMOS™ C7 process offers lower E_oss (95 nJ).	Better suited for ZVS-heavy LLC resonant converters; less optimal for CrM PFC due to higher gate drive loss.	Select when E_oss-driven efficiency dominates over Q_g-related drive complexity.
IRFP4668PBF	Higher R_DS(on) (220 mΩ), larger Q_g (62 nC); no avalanche rating specified in datasheet.	Limited to non-critical industrial supplies where surge immunity is managed externally.	Choose only if cost sensitivity outweighs reliability requirements and thermal margin is ample.

Compared with IPP60R190C7 and IRFP4668PBF, STB23NM60ND delivers superior balance of avalanche ruggedness, gate drive simplicity, and body diode performance-making it preferred for cost-constrained, high-reliability offline converters where layout space limits snubber components.

Availability

STB23NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, LED streetlight drivers, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturability.

Supply support for STB23NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB23NM60ND belongs to ST's SuperMESH™ III power MOSFET family, engineered specifically for high-efficiency, high-reliability offline power conversion in space- and thermally-constrained applications.

FAQ

What is the maximum junction temperature for continuous operation?

The STB23NM60ND has a rated maximum junction temperature (T_j) of 150°C. Continuous operation at this limit requires thermal design ensuring R_thJA ≤ 2.78 °C/W under natural convection, or use of a heatsink achieving R_thJC + R_thCS + R_thSA ≤ 0.83 °C/W. Derating is mandatory above 125°C ambient.

Does the TO-220FP package require electrical isolation from the heatsink?

No-the TO-220FP package features an electrically insulated metal tab, so direct mounting to a grounded heatsink is permitted without thermal pad or mica insulator. This simplifies thermal design and improves heat transfer efficiency compared to standard TO-220 variants.

Can STB23NM60ND replace STP22NM60N in existing designs?

Yes-STB23NM60ND is a direct upgrade: identical pinout, same 600 V rating, lower R_DS(on) (190 mΩ vs. 220 mΩ), and improved avalanche ruggedness. Layout changes are unnecessary, but gate drive strength should be verified due to slightly higher Q_g (45 nC vs. 40 nC).

Is the body diode suitable for synchronous rectification in flyback converters?

No-the body diode is optimized for unclamped inductive switching, not low-loss rectification. Its V_F is ~2.5 V and t_rr is 75 ns, making it unsuitable for secondary-side synchronous rectification. It is intended for primary-side freewheeling or active clamp functions only.

STB23NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2050 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB23NM60ND FAQ

1.How can I place an order for STB23NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STB23NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB23NM60ND reliable?

The price and inventory of STB23NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB23NM60ND is usually 5 days.

3.What payment methods are accepted for STB23NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB23NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB23NM60ND?

STB23NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB23NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB23NM60ND?

For technical support, including STB23NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB23NM60ND requirements.

6.How does Aetrix verify that STB23NM60ND is sourced from the original manufacturer or authorized distributors?

All STB23NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB23NM60ND meets industry standards.

7.What is the process for return or replacement of STB23NM60ND?

All STB23NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB23NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB23NM60ND part is unused and in its original packaging.

Return procedure for STB23NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…