STMicroelectronics STB24N60DM2

Overview

STB24N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 fast-recovery diode series, designed for high-efficiency switching in bridge and ZVS phase-shift converters. It delivers 600 V V_DS, 175 mΩ typ. R_DS(on) at V_GS = 10 V, 18 A continuous drain current at T_C = 25 °C, and features ultra-low Q_rr (0.956 µC) and fast trr (155 ns) for reduced switching losses in hard- and soft-switching topologies.

For engineers reviewing the STB24N60DM2 datasheet, STB24N60DM2 pinout, STB24N60DM2 application, or STB24N60DM2 equivalent, key selection criteria include its 40 V/ns diode recovery dv/dt ruggedness, 50 V/ns MOSFET dv/dt capability, 100% avalanche tested rating (E_AS = 180 mJ), and D²PAK (TO-263) package suitability for high-power density PCB layouts with thermal resistance R_thJC = 0.83 °C/W.

Technical Context

This device implements ST's MDmesh DM2 silicon architecture optimized for high-voltage power conversion, integrating a fast-recovery body diode with low Q_rr and trr to minimize reverse recovery losses in synchronous rectification and resonant topologies. Its gate charge profile shows Q_g = 29 nC and Q_gd = 12 nC, enabling efficient drive with standard gate drivers while maintaining robust dv/dt immunity.

The MOSFET operates with V_GS(th) = 3–5 V and supports ±25 V gate-source voltage, ensuring compatibility with 12 V and 15 V gate drive rails. Thermal design is enabled by low R_thJC (0.83 °C/W) and specified safe operating area up to 10 ms pulses at T_C = 25 °C, supporting high peak-current transient handling in PFC and LLC stages.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), thermally enhanced for PCB heat spreading; footprint per Figure 22 (DS10027 Rev 4); ECOPACK® compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP24N60DM2 and STW24N60DM2, the STB24N60DM2 offers superior PCB thermal management via D²PAK's low-profile, high-copper-area footprint-critical for high-density server PSUs where airflow is restricted and board space is constrained.

Availability

STB24N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV on-board chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STB24N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This MOSFET belongs to the MDmesh™ DM2 product line-engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in datacenter, industrial, and green energy systems.

FAQ

What is the maximum recommended gate resistor value for STB24N60DM2 in a 300 kHz phase-shifted full-bridge?

A 4.7 Ω gate resistor is validated in the datasheet test circuit (Figure 15) for 300 V V_DD, 9 A I_D, and 10 V V_GS. At 300 kHz, this value balances switching speed (t_d(on) = 15 ns, t_f = 15 ns) and gate drive loss. Increasing beyond 10 Ω risks incomplete turn-on within dead-time, while values below 2.2 Ω may cause ringing due to 7 Ω intrinsic R_g interaction with PCB inductance.

Can STB24N60DM2 replace STB24N60M2 in an existing PFC design?

No-STB24N60M2 uses MDmesh M2 technology with higher Q_rr (≈2.5 µC) and slower trr (≈300 ns). Substituting STB24N60DM2 reduces diode recovery loss by >60%, but requires gate drive tuning due to lower Q_g (29 nC vs. 42 nC) and may expose layout parasitics previously masked by slower switching. Layout review and dead-time adjustment are mandatory.

Is the exposed drain tab on STB24N60DM2 electrically isolated from the PCB ground plane?

No-the D²PAK drain tab is internally connected to the MOSFET drain and must be routed as a high-voltage node. It is not insulated; thermal interface material with dielectric strength ≥1.5 kV is required if mounted over a grounded copper pour. ST recommends using solder mask-defined thermal pads with minimum 0.3 mm clearance to adjacent traces per IPC-2221.

Does STB24N60DM2 support paralleling for higher current capacity?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 12) ensures current sharing stability. Parallel operation requires matched gate drive paths (≤500 ps skew), identical PCB trace lengths, and individual 10 Ω gate resistors. Derate total current by 15% versus sum of individual I_D ratings to account for thermal coupling between devices on shared copper areas.