STMicroelectronics STB24N65M2

Overview

STB24N65M2 from STMicroelectronics is an N-channel 650 V, 185 mΩ typ. (230 mΩ max.), 16 A MDmesh™ M2 Power MOSFET in D²PAK (TO-263) package. It delivers low gate charge (29 nC), optimized Coss profile (47.5 pF), and 100% avalanche-tested ruggedness for high-efficiency flyback, PFC, and resonant converters operating up to 100 °C case temperature.

For engineers reviewing the STB24N65M2 datasheet, STB24N65M2 pinout, STB24N65M2 application, or STB24N65M2 equivalent, key selection criteria include RDS(on) at 100 °C (10 A continuous ID), dv/dt ruggedness (50 V/ns), unclamped inductive switching capability (EAS = 650 mJ), and thermal resistance (RthJC = 0.83 °C/W) in high-power SMPS designs.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce conduction loss and improve switching efficiency. Its Zener-protected gate enables robust ESD tolerance (±25 V VGS rating) and stable threshold voltage (2–4 V) across -55 to 150 °C junction range.

The integrated body diode features low forward voltage (1.6 V at 16 A), fast reverse recovery (350 ns typ. at 25 °C), and controlled Qrr (4.5 µC), making it suitable for hard-switched topologies where diode commutation stress is critical.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-terminal configuration with 1-inch² FR-4 thermal pad requirement. Mechanical outline complies with JEDEC TO-263AB standard (A = 4.6 mm, D = 9.35 mm, E = 10.4 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF24N65M2, STB24N65M2 offers 5× lower junction-to-case thermal resistance and surface-mount compatibility; versus IPP65R280C7, it trades higher R_DS(on) for superior avalanche energy rating and lower C_oss, favoring reliability in high-stress PFC applications.

Availability

STB24N65M2 is available at Aetrix Electronics and suitable for industrial PFC modules, telecom rectifiers, and EV onboard charger designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB24N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in server, telecom, and EV infrastructure applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB24N65M2 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10381 Rev 3. This rating accounts for thermal derating due to increased R_DS(on) and reduced safe operating area at elevated temperatures, ensuring reliable operation in thermally constrained environments like sealed server PSUs.

Does the device include integrated gate protection?

Yes - the STB24N65M2 integrates a Zener diode between gate and source, providing ±25 V gate-source voltage clamping. This eliminates the need for external gate protection components in most applications and ensures robustness against ESD events and gate drive overshoot during layout parasitic ringing.

How does its body diode performance compare to standard silicon MOSFETs?

The STB24N65M2 body diode achieves 350 ns reverse recovery time (t_rr) and 4.5 µC reverse recovery charge (Q_rr) at 25 °C, significantly faster than legacy 650 V MOSFETs. Its soft recovery characteristic reduces voltage spikes and EMI in hard-switched topologies, enabling cleaner turn-off waveforms without snubbers.

Is the D²PAK tab electrically isolated from the PCB ground plane?

No - the D²PAK tab is internally connected to the drain terminal and must be electrically isolated from any grounded metal heatsink or PCB copper pour unless the drain node is at system ground potential. Proper isolation (e.g., silicone pad or ceramic washer) is required when mounting to a common heatsink shared with other devices.