STMicroelectronics STB24NM60N

Overview

STB24NM60N from STMicroelectronics is an N-channel 600 V, 17 A Power MOSFET in D²PAK (TO-263) package, built on MDmesh™ II vertical strip technology. It delivers 168 mΩ typ. R_DS(on), 44 nC total gate charge, and 100% avalanche-tested ruggedness-enabling high-efficiency hard-switched PFC and SMPS in industrial power supplies.

For engineers reviewing the STB24NM60N datasheet, STB24NM60N pinout, STB24NM60N application, or STB24NM60N equivalent, key selection criteria include its 15 V/ns dv/dt capability, 300 mJ single-pulse avalanche energy, low C_iss (1330 pF), and thermal resistance of 1 °C/W (junction-to-case), critical for high-reliability 600 V switching designs.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ architecture with optimized strip layout and vertical conduction, achieving ultra-low R_DS(on) × Q_g figure-of-merit (≈7.4 Ω·nC). Its 190 mΩ max. R_DS(on) at V_GS = 10 V and 8 A ensures minimal conduction loss in continuous 17 A operation at T_C = 25 °C.

The device integrates a robust body diode with 340 ns reverse recovery time (T_J = 25 °C) and 4.6 µC Q_rr, supporting ZVS-capable topologies. Its 15 V/ns peak diode recovery dv/dt rating and 68 A pulsed drain current support unclamped inductive switching in UPS and motor drives.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain), 3-pin configuration with 2.54 mm lead pitch and 15.0–15.85 mm height. Tab is electrically connected to drain and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V N-channel power MOSFET applications.

Compared with STW20NM60ND and IPP60R190C7, STB24NM60N uniquely combines guaranteed avalanche ruggedness, industry-leading R_DS(on) × Q_g trade-off, and D²PAK thermal performance-making it optimal for mission-critical 600 V industrial converters requiring both efficiency and fault tolerance.

Availability

STB24NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and uninterruptible power systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB24NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB24NM60N belongs to the MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600 V switching in industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB24NM60N supports 11 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS7111. This derating reflects thermal limits under sustained conduction; actual usable current depends on heatsink design and ambient conditions. The device maintains safe SOA operation up to 68 A pulsed (I_DM) with appropriate gate drive and layout.

Does STB24NM60N have a fully rated avalanche capability?

Yes-STB24NM60N undergoes 100% production avalanche testing per DS7111, guaranteeing minimum single-pulse avalanche energy (E_AS) of 300 mJ at T_J = 25 °C. This validated ruggedness enables reliable operation in unclamped inductive switching, such as relay driving or transformer reset circuits, without external protection.

Can STB24NM60N be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (80 pF) and C_rss (3.2 pF), combined with 340 ns body diode t_rr, support efficient ZVS in LLC and phase-shifted full-bridge converters. The 15 V/ns dv/dt rating ensures robustness against voltage spikes during resonant transitions, reducing need for snubbers.

What is the gate threshold voltage range, and how does it affect drive design?

V_GS(th) is specified from 2 V to 4 V (min/typ/max) at I_D = 250 µA. This tight range ensures consistent turn-on behavior across temperature and process variation. A 10 V gate drive is recommended to fully enhance the channel and minimize R_DS(on); 5 V drive yields partial enhancement (~50% of rated current capacity).