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STMicroelectronics STB24NM65N
- Part No.:
- STB24NM65N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB24NM65N.pdf
- Description:
- MOSFET N-CH 650V 19A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,338
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Product details
Overview
STB24NM65N from STMicroelectronics is an N-channel 650 V, 19 A, 0.16 Ω (typ.) MDmesh™ II Power MOSFET in D²PAK (TO-263) package, designed for high-efficiency hard-switching and resonant-mode SMPS topologies including PFC and LLC converters. It features 100% avalanche tested ruggedness, low gate charge (70 nC), and low input capacitance (2500 pF), enabling fast switching with reduced losses in industrial and telecom power supplies.
For engineers reviewing the STB24NM65N datasheet, STB24NM65N pinout, STB24NM65N application, or STB24NM65N equivalent, key selection criteria include RDS(on) at 10 V drive, unclamped inductive switching capability (EAS = 500 mJ), diode reverse recovery performance (trr = 460 ns @ TJ = 25 °C), and thermal resistance (Rthj-case = 3.1 °C/W).
Technical Context
This second-generation MDmesh™ device uses a proprietary vertical structure combined with strip layout to minimize both conduction and switching losses. Its 710 V breakdown rating (VDSS @ TJmax) exceeds standard 650 V requirements, supporting robust operation under voltage transients in offline converters.
The MOSFET integrates a fast, low-Qrr body diode (Qrr = 7 µC, IRRM = 30 A) optimized for ZVS and quasi-resonant circuits. Gate input resistance of 2.5 Ω enables stable drive without external damping, while low Ciss/Coss ratio supports high-frequency operation up to 300 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Rated drain-source blocking voltage for universal AC input (85–265 VAC) offline applications |
| RDS(on) max | 0.19 Ω @ VGS = 10 V, ID = 9.5 A - Ensures <1.8 W conduction loss at 19 A continuous current |
| Qg | 70 nC - Enables efficient gate driving with standard 1-A peak drivers at 100–300 kHz switching frequencies |
| EAS | 500 mJ - Supports reliable unclamped inductive switching in flyback and forward converters without snubbers |
| trr | 460 ns @ TJ = 25 °C - Minimizes diode recovery loss and EMI in bridge-leg and synchronous rectifier configurations |
| Rthj-case | 3.1 °C/W - Allows 160 W dissipation at ΔT = 50 °C case-to-heatsink, suitable for compact heatsink designs |
| ID (cont) | 19 A @ TC = 25 °C - Sustains full-load current in 500–1000 W server PSUs and industrial SMPS |
Pinout & Package
D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layouts and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; low 2.5 Ω input resistance reduces need for gate resistor damping |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in most half-bridge and LLC configurations |
| 3 (D) | Drain | Main power output terminal; electrically and thermally connected to large copper area on PCB via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ technology | Combines ultra-low RDS(on) × Qg figure-of-merit (3.04 Ω·nC) for minimal switching + conduction loss trade-off |
| 100% avalanche rated | Guarantees single-pulse energy handling up to 500 mJ without parameter shift-critical for PFC overvoltage events |
| Low Coss (120 pF) & Crss (10 pF) | Reduces capacitive turn-on loss and improves light-load efficiency in resonant topologies |
| Fast body diode (trr = 460 ns) | Enables soft-switching in LLC half-bridges and reduces cross-conduction risk in synchronous rectification |
| ECOPACK® RoHS-compliant packaging | Lead-free second-level interconnect with JEDEC JESD97 marking-meets industrial environmental compliance requirements |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: High-density 80 PLUS Titanium 1 kW server power supply operating at 200 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary-side power conversion stage; handles 19 A peak drain current and 520 V DC bus. Use Value: Low RDS(on) and Qg reduce total power loss by 1.2 W vs. first-gen 650 V MOSFETs, improving system efficiency from 95.8% to 96.3% at full load. |
Use Scenario: Three-phase industrial motor drive with boost-type active front-end (AFE) rectifier. IC Role / Device Role / Timing Role: Boost switch in 650 V DC-link generation circuit; commutated at 25 kHz with 100% duty-cycle margin. Use Value: Avalanche ruggedness ensures survival during line surge events (IEC 61000-4-5 Level 4), eliminating need for external clamping components. |
| Telecom Rectifier Module | EV Charger Onboard PFC |
|
Use Scenario: 3 kW telecom rectifier module with interleaved dual-boost PFC stage operating at 125 kHz. IC Role / Device Role / Timing Role: High-side switch in interleaved boost leg; driven by isolated gate driver with 10 V logic level. Use Value: Low Ciss/Coss ratio minimizes dead-time losses and enables precise zero-voltage switching control across full load range. |
Use Scenario: 11 kW onboard charger using two-phase interleaved PFC for EV battery charging (SAE J1772). IC Role / Device Role / Timing Role: Primary switching element in each PFC phase; subjected to repetitive 650 V bus and 19 A RMS current. Use Value: Rthj-case = 3.1 °C/W allows direct mounting to aluminum baseplate without thermal interface material, reducing thermal stack-up by 0.5 °C/W. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R019C7 | 650 V, 0.019 Ω, 30 A, TO-247 - lower RDS(on) but higher Qg (110 nC) and larger footprint | Better conduction loss at >25 A, but requires stronger gate driver and larger heatsink | Select when system prioritizes conduction loss over switching loss and board space is unconstrained |
| IXFH32N60P | 600 V, 0.085 Ω, 32 A, TO-247 - lower voltage rating, higher current, no avalanche rating | Suitable for 400 V DC bus systems only; not rated for 650 V offline applications | Choose only for fixed 380–420 V DC input systems where cost-per-amp is critical and transient protection is externally managed |
Compared with IPW65R019C7 and IXFH32N60P, STB24NM65N delivers optimal balance of 650 V robustness, 0.16 Ω conduction loss, and 70 nC gate charge in a compact D²PAK package-making it ideal for space-constrained, high-efficiency 500–1000 W industrial and telecom power supplies.
Availability
STB24NM65N is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.
Supply support for STB24NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.
The STB24NM65N belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 400 V DC bus.
FAQ
What is the maximum safe operating temperature for STB24NM65N?
The absolute maximum junction temperature is 150 °C, with derating required above 100 °C case temperature. At TC = 100 °C, continuous drain current drops to 12 A per Table 2. Thermal design must ensure Rthj-case ≤ 3.1 °C/W and maintain TJ < 150 °C under worst-case ambient and airflow conditions.
Does STB24NM65N require a negative gate turn-off voltage?
No. The device is fully enhanced at VGS = 10 V and has a gate threshold voltage (VGS(th)) of 2–4 V. ST recommends 0 V to 12 V gate drive; negative bias is unnecessary and not specified in the datasheet. A 15 V max gate-source voltage limit applies per absolute ratings.
Can STB24NM65N replace STP24NM65N in existing TO-220 designs?
No direct drop-in replacement: STB24NM65N uses D²PAK (surface-mount) while STP24NM65N uses TO-220 (through-hole). PCB layout, thermal pad design, and reflow profile must be redesigned. Electrical parameters are identical, but mechanical mounting, thermal path, and assembly process differ fundamentally.
Is the body diode suitable for synchronous rectification?
Yes-the source-drain diode is characterized for reverse recovery (trr = 460 ns, Qrr = 7 µC) and rated for 19 A continuous current. However, its VSD = 1.3 V at 19 A is higher than discrete Schottky diodes; use only in topologies where its speed and ruggedness outweigh forward voltage penalty, such as LLC resonant converters.
STB24NM65N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB24NM65N FAQ
1.How can I place an order for STB24NM65N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB24NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB24NM65N reliable?
The price and inventory of STB24NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB24NM65N is usually 5 days.
3.What payment methods are accepted for STB24NM65N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB24NM65N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB24NM65N?
STB24NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB24NM65N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB24NM65N?
For technical support, including STB24NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB24NM65N requirements.
6.How does Aetrix verify that STB24NM65N is sourced from the original manufacturer or authorized distributors?
All STB24NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB24NM65N meets industry standards.
7.What is the process for return or replacement of STB24NM65N?
All STB24NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STB24NM65N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB24NM65N part is unused and in its original packaging.
Return procedure for STB24NM65N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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