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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB25N80K5

Name: STB25N80K5
Brand: STMicroelectronics
SKU: STB25N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB25N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB25N80K5.pdf

Description:: MOSFET N-CH 800V 19.5A D2PAK

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Product details

Overview

STB25N80K5 from STMicroelectronics is an N-channel 800 V, 19.5 A high-voltage power MOSFET based on MDmesh K5 technology, featuring 190 mΩ typ. R_DS(on), 40 nC total gate charge, and 100% avalanche tested. It serves as a primary switching device in offline SMPS, PFC stages, and industrial inverters operating up to 150 °C junction temperature.

For engineers reviewing the STB25N80K5 datasheet, STB25N80K5 pinout, STB25N80K5 application, or STB25N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 7.6 Ω·nC), Zener-protected gate, and D²PAK package thermal performance (R_thJC = 0.5 °C/W).

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical superjunction architecture to achieve simultaneous reduction in conduction loss and switching loss. Its 800 V V_(BR)DSS rating supports universal AC input (85–265 VAC) with margin for transient overvoltage in telecom and industrial power supplies.

The device integrates a fast-recovery body diode (t_rr = 515 ns at 25 °C, 615 ns at 150 °C) and is rated for unclamped inductive switching with E_AS = 200 mJ - enabling robust operation in hard-switched flyback and resonant LLC topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands peak line voltage + surge in 400 VDC bus applications without breakdown.
R_DS(on) max	260 mΩ at V_GS = 10 V, I_D = 10 A - Limits conduction loss to ≤ 52 W at 19.5 A, critical for thermal management in compact designs.
Q_g	40 nC - Enables fast turn-on with low drive power; reduces gate driver losses in high-frequency (>100 kHz) PFC stages.
E_AS	200 mJ - Sustains single-pulse inductive energy without failure, eliminating need for external clamping in flyback snubberless designs.
t_rr	515 ns - Minimizes reverse recovery loss and EMI generation during diode commutation in bridge-leg configurations.
R_thJC	0.5 °C/W - Enables 250 W dissipation with ≤125 °C case-to-junction rise, supporting high-power density in D²PAK-mount PCB layouts.

Pinout & Package

STB25N80K5 is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK environmental standards and features 3 terminals: Drain (Tab), Gate (Pin 1), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Exposed copper tab provides low-inductance, low-thermal-resistance path to PCB copper pour or heatsink; electrically connected to drain.
Gate (Pin 1)	Control electrode	Receives 10 V logic-level drive; Zener-protected to ±30 V to prevent ESD-induced gate oxide rupture during handling or layout transients.
Source (Pin 3)	Reference node for gate drive and current sensing	Serves as return path for load current and gate drive loop; must be routed with minimal inductance to avoid oscillation and false turn-on.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 40 nC enables <500 ns turn-on with 100 Ω gate resistor, reducing switching loss in 100–300 kHz SMPS.
Very low FoM (R_DS(on) × Q_g)	7.6 Ω·nC - benchmark figure of merit for high-voltage MOSFETs; directly improves power density vs. legacy K3/K4 devices.
Zener-protected gate	Integrated 30 V bidirectional Zener clamp prevents gate-source overvoltage beyond absolute maximum rating during layout or ESD events.
100% avalanche tested	Each unit validated for single-pulse E_AS = 200 mJ - guarantees ruggedness in unclamped inductive switching without derating.

Applications

Industrial AC-DC Power Supply

Telecom Rectifier Module

Use Scenario: Primary-side switch in 500 W active-clamp forward converter with universal AC input.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer; operates at 200 kHz with 50% duty cycle.

Use Value: Low R_DS(on) and Q_g reduce total losses by 18% vs. comparable 800 V MOSFETs, enabling >94% efficiency at full load.

Use Scenario: Boost PFC stage in 1 kW telecom rectifier with 380 VDC output.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) switch; handles 19.5 A RMS input current at 65 kHz.

Use Value: Avalanche rating ensures reliability during line surges; low C_oss (130 pF) minimizes capacitive turn-off loss.

Motor Drive Inverter Stage

High-Voltage DC-DC Converter

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET hybrid inverter for HVAC compressors (400 VDC bus).

IC Role / Device Role / Timing Role: High-side switching device with fast body diode recovery for shoot-through immunity.

Use Value: t_rr = 515 ns and low Q_rr (11 µC) suppress voltage spikes during freewheeling, reducing snubber size by 40%.

Use Scenario: Primary switch in isolated 1.5 kV output DC-DC converter for EV battery chargers.

IC Role / Device Role / Timing Role: Hard-switched main transistor in forward topology; withstands 1.2× rated V_DS during transient overvoltage.

Use Value: 2.5 kV isolation rating (Viso) between leads and heatsink allows safe mounting on insulated substrates without creepage extension.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25N80K5	Same die, TO-220 package; R_thJC = 3.1 °C/W vs. 0.5 °C/W for STB25N80K5.	Lower power density; suitable for lower-current (<12 A continuous) or forced-air-cooled designs.	Select when mechanical mounting constraints favor through-hole or when thermal budget allows higher junction rise.
IPW65R041CFD7	650 V rating, 41 mΩ R_DS(on), 61 nC Q_g; Infineon CoolMOS CFD7 technology.	Not rated for 800 V systems; requires derating in universal-input PFC; superior efficiency only below 400 VDC bus.	Choose only for 380–400 VDC bus applications where lower conduction loss outweighs voltage margin loss.

Compared with STP25N80K5, STB25N80K5 delivers 6.2× better thermal resistance and 30% lower switching loss in surface-mount high-power layouts; versus IPW65R041CFD7, it provides essential 800 V rating for surge-immune industrial mains interfaces but trades 15% higher R_DS(on) for system-level reliability.

Availability

STB25N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and motor drive inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for STB25N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB25N80K5 belongs to the MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for STB25N80K5 at 100 °C case temperature?

The maximum continuous drain current is 12.3 A at T_C = 100 °C, as specified in Table 1 of DS9179 Rev 4. This rating accounts for thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, ensuring SOA compliance under sustained load conditions.

Does STB25N80K5 require a negative gate voltage for reliable turn-off?

No. STB25N80K5 has a gate threshold voltage (V_GS(th)) of 3–5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying negative voltage is unnecessary and not required by the datasheet for normal operation or noise immunity.

Can STB25N80K5 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown in Figure 7) enables inherent current sharing. However, matched gate drive layout, identical PCB trace inductance, and individual gate resistors are mandatory to ensure balanced dynamic current distribution and avoid oscillation or thermal runaway.

Is the body diode of STB25N80K5 suitable for synchronous rectification?

No. The body diode is optimized for freewheeling, not reverse conduction. Its V_SD = 1.5 V at 19.5 A and t_rr > 500 ns result in high conduction and recovery losses. For synchronous rectification, an external Schottky or MOSFET with dedicated low-V_F and fast t_rr is required.

STB25N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 19.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 260mOhm @ 19.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB25N80K5 FAQ

1.How can I place an order for STB25N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB25N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB25N80K5 reliable?

The price and inventory of STB25N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25N80K5 is usually 5 days.

3.What payment methods are accepted for STB25N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB25N80K5?

STB25N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB25N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB25N80K5?

For technical support, including STB25N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25N80K5 requirements.

6.How does Aetrix verify that STB25N80K5 is sourced from the original manufacturer or authorized distributors?

All STB25N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25N80K5 meets industry standards.

7.What is the process for return or replacement of STB25N80K5?

All STB25N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STB25N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB25N80K5 part is unused and in its original packaging.

Return procedure for STB25N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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