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STMicroelectronics STB25NM50N
- Part No.:
- STB25NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB25NM50N.pdf
- Description:
- MOSFET N-CH 500V 22A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,821
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Product details
Overview
STB25NM50N from STMicroelectronics is an N-channel 500 V, 22 A, 0.11 Ω RDS(on) MDmesh™ II Power MOSFET in D²PAK (TO-263) package, designed for high-efficiency switching converters requiring low conduction and switching losses. It features 100% avalanche tested ruggedness, 84 nC total gate charge, and 2565 pF input capacitance - enabling use in industrial SMPS, solar inverters, and UPS systems operating up to 150 °C junction temperature.
For engineers reviewing the STB25NM50N datasheet, STB25NM50N pinout, STB25NM50N application, or STB25NM50N equivalent, key selection criteria include its 500 V VDS, 0.11 Ω RDS(on) at VGS = 10 V, 84 nC Qg, 160 W PTOT at TC = 25 °C, and D²PAK thermal resistance of 0.78 °C/W - all critical for hard-switched PFC and DC-DC stages.
Technical Context
This MDmesh™ II device uses a proprietary vertical structure combined with strip layout to minimize both RDS(on) and gate charge simultaneously. Its 44 V/ns dv/dt capability at turn-off ensures robust operation under inductive switching stress without spurious turn-on.
The integrated source-drain diode delivers 22 A continuous forward current with 1.3 V VSD and 460 ns reverse recovery time at 25 °C, supporting synchronous rectification and freewheeling in bridge topologies. Thermal resistance of 0.78 °C/W (j-case) enables high-power density designs with standard heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25% voltage margin for transient spikes |
| RDS(on) max | 0.140 Ω - ensures <1.5 W conduction loss at 11 A, critical for >95% efficiency targets |
| ID (cont) | 22 A at TC = 25 °C - defines maximum continuous output current in TO-220/D²PAK/TO-247 packages |
| Qg | 84 nC - determines gate drive power requirement and switching speed in 50–500 kHz converters |
| EAS | 350 mJ - quantifies unclamped inductive energy handling capability without failure |
| Rthj-case | 0.78 °C/W - enables 160 W dissipation with ≤125 °C case-to-ambient delta, simplifying thermal design |
| Ciss | 2565 pF - impacts Miller effect and gate driver sizing in high-side configurations |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives 10 V logic-level signal; 1.6 Ω gate input resistance minimizes resonance risk |
| 2 (Drain) | High-side power switch node | Connected to exposed copper pad; carries full load current and withstands 500 V potential |
| 3 (Source) | Reference return path | Low-inductance connection point for gate drive return and current sensing; tied to power ground |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg figure-of-merit by 30% vs. first-gen MDmesh, improving efficiency in 100–300 kHz converters |
| 100% avalanche rated | Guarantees single-pulse EAS = 350 mJ at 50 V, eliminating need for external snubbers in flyback/LLC primary switches |
| Low Coss eq. | 315 pF over 0–400 V range - reduces turn-off loss and improves light-load efficiency in resonant topologies |
| ECOPACK® lead-free | Complies with RoHS and JEDEC JESD97; marked on package and inner box label for traceable environmental compliance |
| Fast diode recovery | trr = 460 ns at 25 °C - limits commutation loss and EMI in synchronous rectifier and half-bridge applications |
Applications
| Industrial SMPS | Solar Inverter DC-DC Stage |
|---|---|
Use Scenario: Primary-side switch in 1–3 kW telecom and server power supplies operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC/DC front-end to isolated DC bus. Use Value: 0.11 Ω RDS(on) and 84 nC Qg reduce conduction + switching losses below 2.1 W at 11 A/100 kHz, enabling 96% peak efficiency. |
Use Scenario: Boost converter switch in string-level solar inverters handling 600–1000 V DC input. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch regulating PV array voltage into intermediate DC link. Use Value: 500 V VDS rating with 25% margin over 800 V max string voltage ensures long-term reliability under lightning surge conditions. |
| UPS Inverter Output Stage | Motor Drive Half-Bridge |
Use Scenario: Low-side switch in 3 kVA online UPS inverter leg delivering 230 V AC output. IC Role / Device Role / Timing Role: Fast-turning power switch synchronized with complementary high-side device in 6–16 kHz PWM. Use Value: 44 V/ns dv/dt capability prevents false triggering during rapid bus voltage transitions, ensuring clean dead-time control. |
Use Scenario: Phase-leg switch in 750 W BLDC motor drives for HVAC and industrial pumps. IC Role / Device Role / Timing Role: Hard-switched power transistor managing bidirectional current flow through motor windings. Use Value: 22 A continuous current rating at TC = 100 °C supports 1.5× peak torque without derating, reducing heatsink size by 40%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM50N | Same die, TO-220 package; Rthj-case = 0.78 °C/W but requires through-hole mounting and larger board area | Better suited for prototyping and lower-volume industrial controls where manual assembly is acceptable | Select when mechanical robustness and serviceability outweigh surface-mount density requirements |
| IPP60R190C6 | 650 V, 0.19 Ω, 21 A, CoolMOS™ C6; higher VDS but 55 nC Qg and superior Coss linearity | Preferred in ZVS LLC resonant converters where low Qg/Coss ratio dominates efficiency above 300 kHz | Choose for >300 kHz soft-switching designs where reduced gate drive loss offsets higher RDS(on) |
Compared with STP25NM50N, STB25NM50N offers identical silicon performance in a space-saving D²PAK package ideal for automated assembly; versus IPP60R190C6, it trades higher Qg for proven avalanche ruggedness and lower cost in hard-switched 50–200 kHz applications.
Availability
STB25NM50N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and UPS inverter output stages requiring stable component supply and long-lifecycle support.
Supply support for STB25NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to the MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching converters in industrial power supplies and renewable energy systems.
FAQ
Is STB25NM50N suitable for zero-voltage switching (ZVS) topologies?
Yes - its 315 pF equivalent output capacitance (Coss eq.) and 460 ns diode reverse recovery time enable reliable ZVS operation in LLC resonant converters up to 300 kHz. However, for optimal soft-switching performance above 250 kHz, the lower Qg of CoolMOS™ devices may yield better efficiency.
What is the maximum recommended gate resistor value for reliable switching?
A 4.7 Ω gate resistor is specified in the datasheet for switching time measurements (td(on) = 23 ns, tf = 22 ns). For 100–200 kHz operation, 10–22 Ω provides optimal trade-off between EMI suppression and switching loss; values above 47 Ω risk incomplete turn-on due to 1.6 Ω internal gate resistance.
Does STB25NM50N require a negative gate turn-off voltage?
No - the device specifies ±25 V gate-source voltage rating and operates reliably with 0 V to +10 V or +12 V gate drive. Negative turn-off is not required; however, a –5 V bias can improve noise immunity in high-dv/dt environments like motor drives.
Can STB25NM50N replace STW25NM50N in existing TO-247 layouts?
No - STB25NM50N uses D²PAK (TO-263) packaging with different footprint, thermal pad layout, and lead pitch. Direct replacement would require PCB redesign. For drop-in compatibility, STP25NM50N (TO-220) or STW25NM50N (TO-247) must be used per original mechanical constraints.
STB25NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 140mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2565 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB25NM50N FAQ
1.How can I place an order for STB25NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB25NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB25NM50N reliable?
The price and inventory of STB25NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25NM50N is usually 5 days.
3.What payment methods are accepted for STB25NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB25NM50N?
STB25NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB25NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB25NM50N?
For technical support, including STB25NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25NM50N requirements.
6.How does Aetrix verify that STB25NM50N is sourced from the original manufacturer or authorized distributors?
All STB25NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25NM50N meets industry standards.
7.What is the process for return or replacement of STB25NM50N?
All STB25NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB25NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB25NM50N part is unused and in its original packaging.
Return procedure for STB25NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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