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STMicroelectronics STB25NM50N-1
- Part No.:
- STB25NM50N-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB25NM50N-1.pdf
- Description:
- MOSFET N-CH 500V 22A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,982
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Product details
Overview
STB25NM50N-1 from STMicroelectronics is an N-channel 500 V, 22 A MDmesh™ II Power MOSFET in I²PAK (TO-262) package with RDS(on) < 0.140 Ω at VGS = 10 V, 100% avalanche tested, and optimized for high-efficiency switching converters in industrial SMPS and PFC stages.
For engineers reviewing the STB25NM50N-1 datasheet, STB25NM50N-1 pinout, STB25NM50N-1 application, or STB25NM50N-1 equivalent, this device is selected for its low gate charge (84 nC), high dv/dt immunity (44 V/ns), robust unclamped inductive switching capability (EAS = 350 mJ), and thermal resistance of 0.78 °C/W (junction-to-case).
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 500 V VDS rating and 150 °C max junction temperature support operation in high-voltage, high-temperature environments such as telecom rectifiers and solar inverters.
The device features a fast body diode with trr = 460 ns (Tj = 25 °C) and Qrr = 6.9 µC under standard test conditions, enabling efficient hard-switched and resonant topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin. |
| RDS(on) max | < 0.140 Ω - Enables ≤3.4 W conduction loss at 22 A continuous drain current (TC = 25 °C). |
| Qg | 84 nC - Reduces gate drive power requirement and enables use with standard 1–2 A peak gate drivers. |
| EAS | 350 mJ - Supports reliable unclamped inductive switching in flyback and forward converters without external clamping. |
| tr/tf | 23/22 ns - Facilitates >200 kHz switching frequencies with minimal overlap loss in hard-switched topologies. |
| Rthj-case | 0.78 °C/W - Allows 160 W total dissipation at TC = 25 °C, supporting compact heatsink designs. |
| dv/dt immunity | 44 V/ns - Resists false turn-on in high-noise bridge-leg configurations with fast voltage transients. |
Pinout & Package
I²PAK (TO-262) package: insulated case, single-row 3-pin through-hole outline with exposed drain pad on underside for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | High-impedance control terminal requiring ≤100 nA leakage; driven by 10 V logic for full enhancement. |
| Pin 2 (D) | Drain | Electrically and thermally connected to metal tab; must be isolated from heatsink unless floating topology used. |
| Pin 3 (S) | Source | Reference node for gate drive; ties to power ground in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees ruggedness in overvoltage events without derating; eliminates need for external avalanche protection. |
| Low Ciss/Coss | 2565 pF / 511 pF - Minimizes capacitive switching loss and improves EMI behavior in high-frequency operation. |
| MDmesh™ II architecture | Reduces RDS(on) × Qg figure-of-merit by ~35% vs. first-gen devices - critical for efficiency in 100–300 kHz PFC stages. |
| ECOPACK® compliance | Lead-free second-level interconnect and RoHS-compliant packaging - meets industrial environmental requirements. |
| Fast body diode recovery | trr = 460 ns, Qrr = 6.9 µC - Enables zero-voltage switching (ZVS) assist in LLC resonant converters. |
Applications
| Industrial Switch-Mode Power Supplies | Telecom Rectifier Modules |
|---|---|
|
Use Scenario: Primary-side switching in 1–3 kW offline PSUs with active PFC and LLC half-bridge stages. IC Role / Device Role / Timing Role: High-side or low-side main switch handling 400 V DC bus with 22 A peak current. Use Value: Low RDS(on) and Qg reduce conduction and gate loss, enabling >96% system efficiency at full load. |
Use Scenario: Hot-swap OR-ing FETs and DC-DC primary switches in 48 V telecom rectifier shelves. IC Role / Device Role / Timing Role: Synchronous rectification and isolation switching in distributed power architectures. Use Value: Avalanche rating and 150 °C Tj ensure reliability under load dump and short-circuit fault conditions. |
| Solar Microinverters | Motor Drive Inverters |
|
Use Scenario: DC-AC H-bridge switching stage in single-phase microinverters interfacing PV panels to grid. IC Role / Device Role / Timing Role: Half-bridge leg switch operating at 50–100 kHz with bidirectional current flow. Use Value: Fast body diode recovery minimizes reverse recovery loss during freewheeling, improving thermal performance. |
Use Scenario: Inverter output stage in HVAC compressors and industrial servo drives (≤2 kW). IC Role / Device Role / Timing Role: IGBT replacement in 600 V-class motor control inverters using 3-phase bridge topology. Use Value: 500 V rating and 88 A pulsed current support enable direct substitution in existing TO-220FP-based designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM50N | Same die, TO-220 package; Rthj-case = 0.78 °C/W but no internal insulation - requires isolated mounting. | Preferred where mechanical simplicity and lower cost outweigh need for insulated mounting. | Select when heatsink isolation is handled externally and board space permits larger TO-220 footprint. |
| STW25NM50N | Same die, TO-247 package; Rthj-case = 0.78 °C/W and higher creepage/clearance - rated for 2500 VRMS isolation. | Required in medical or high-isolation industrial systems demanding reinforced insulation per IEC 60601 or IEC 62368. | Choose when safety certification mandates ≥2500 VRMS insulation or when maximum thermal headroom is critical. |
Compared with STP25NM50N and STW25NM50N, the STB25NM50N-1 offers identical electrical performance in a smaller, insulated I²PAK package - ideal for space-constrained, high-density industrial power supplies where internal isolation simplifies assembly and reduces BOM count.
Availability
STB25NM50N-1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, and solar microinverter designs requiring stable component supply and long-term manufacturability.
Supply support for STB25NM50N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching applications including PFC, server PSUs, and renewable energy inverters.
FAQ
What is the maximum continuous drain current for STB25NM50N-1 at 100 °C case temperature?
The maximum continuous drain current is 14 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the I²PAK package and ensures safe operation within the 150 °C maximum junction temperature.
Does STB25NM50N-1 have an integrated gate resistor?
No, STB25NM50N-1 does not include an integrated gate resistor. Its gate input resistance is 1.6 Ω (measured at 1 MHz), which is intrinsic to the silicon structure - external gate resistors (typically 4.7–10 Ω) must be added for controlled turn-on/turn-off timing and ringing suppression.
Can STB25NM50N-1 replace STB25NM50N in a design?
Yes - STB25NM50N-1 and STB25NM50N share identical electrical specifications and die, differing only in packaging: STB25NM50N uses D²PAK tape-and-reel, while STB25NM50N-1 uses I²PAK tube. Mechanical mounting and thermal interface must be validated for the I²PAK footprint.
Is STB25NM50N-1 suitable for synchronous rectification?
No - STB25NM50N-1 is optimized as a primary-side switching MOSFET, not a synchronous rectifier. Its body diode recovery characteristics (trr = 460 ns) are adequate for freewheeling but lack the ultra-fast, low-Qrr optimization required for secondary-side synchronous rectification in high-frequency DC-DC converters.
STB25NM50N-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 140mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2565 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB25NM50N-1 FAQ
1.How can I place an order for STB25NM50N-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB25NM50N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB25NM50N-1 reliable?
The price and inventory of STB25NM50N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25NM50N-1 is usually 5 days.
3.What payment methods are accepted for STB25NM50N-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25NM50N-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB25NM50N-1?
STB25NM50N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB25NM50N-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB25NM50N-1?
For technical support, including STB25NM50N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25NM50N-1 requirements.
6.How does Aetrix verify that STB25NM50N-1 is sourced from the original manufacturer or authorized distributors?
All STB25NM50N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25NM50N-1 meets industry standards.
7.What is the process for return or replacement of STB25NM50N-1?
All STB25NM50N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB25NM50N-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB25NM50N-1 part is unused and in its original packaging.
Return procedure for STB25NM50N-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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