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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB25NM60N

Name: STB25NM60N
Brand: STMicroelectronics
SKU: STB25NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB25NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB25NM60N.pdf

Description:: MOSFET N-CH 600V 21A D2PAK

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Product details

Overview

STB25NM60N from STMicroelectronics is an N-channel 600 V, 21 A MDmesh™ II Power MOSFET in D²PAK (TO-263) package, featuring R_DS(on) ≤ 0.160 Ω at V_GS = 10 V, 100% avalanche tested, and low gate charge (Q_g = 84 nC). It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB25NM60N datasheet, STB25NM60N pinout, STB25NM60N application, or STB25NM60N equivalent, key selection criteria include its 600 V V_DSS, 21 A continuous drain current at T_C = 25 °C, 0.130 Ω typical R_DS(on), 84 nC total gate charge, and D²PAK thermal resistance of 0.78 °C/W (junction-to-case).

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, enabling ultra-low on-resistance and gate charge simultaneously. Its optimized capacitance profile (C_iss = 2400 pF, C_oss = 200 pF) supports high-frequency hard-switching up to 100 kHz in resonant and quasi-resonant topologies.

The integrated source-drain diode exhibits fast reverse recovery (t_rr = 427 ns at T_j = 25 °C) and low Q_rr (7.2 µC), reducing switching losses in bridge configurations. The 150 °C maximum junction temperature and 2500 V RMS insulation withstand voltage support robust operation in high-reliability industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC SMPS without derating.
R_DS(on) max	0.160 Ω @ V_GS = 10 V - Enables <1.8 W conduction loss at 10.5 A, critical for >90% efficiency PFC designs.
I_D cont	21 A @ T_C = 25 °C - Supports 300–500 W output power in TO-263-mounted converters with standard heatsinking.
Q_g	84 nC - Reduces gate drive power requirement and enables use with low-power gate drivers like STMicro's STGAP2S.
t_rr	427 ns @ I_SD = 21 A, di/dt = 100 A/µs - Limits commutation loss and EMI in half-bridge LLC resonant converters.
R_thj-case	0.78 °C/W - Allows direct mounting to PCB copper pour or small heatsink for thermal management in space-constrained designs.
E_AS	850 mJ - Provides single-pulse avalanche ruggedness for unclamped inductive switching in flyback and forward converters.

Pinout & Package

STB25NM60N uses the surface-mount D²PAK (TO-263) package with three terminals: Gate (pin 1), Drain (pin 2), Source (pin 3). The exposed drain pad (terminal 2) serves as both high-current path and thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level signal; low input capacitance (2400 pF) minimizes driver loading and propagation delay.
2 (Drain)	High-voltage power input	Connected to rectified AC line or bus voltage; exposed metal pad provides low-inductance, low-thermal-resistance path to PCB.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; must be routed with minimal loop area to suppress ringing and EMI.

Key Features

Feature	Design Value
MDmesh™ II superjunction structure	Delivers industry-leading R_DS(on) × Q_g figure-of-merit (13.4 Ω·nC), enabling higher efficiency than first-gen 600 V MOSFETs.
100% avalanche rated	Guarantees reliable operation under transient overvoltage conditions without external snubbers in flyback and forward topologies.
Low C_oss (200 pF)	Reduces turn-off energy loss and improves zero-voltage switching (ZVS) margin in resonant converters operating above 50 kHz.
ECOPACK® lead-free packaging	Complies with RoHS Directive 2011/65/EU and JEDEC JESD97; suitable for automated reflow assembly with peak temperature ≤ 260 °C.
Fast body diode (t_rr = 427 ns)	Minimizes dead-time losses and shoot-through risk in synchronous rectification and half-bridge configurations.

Applications

Industrial SMPS

Server PSU

Use Scenario: Primary-side switch in 400 W open-frame AC-DC power supply for PLC controllers and HMI panels.

IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward topology, switching at 75 kHz with 50% duty cycle.

Use Value: 0.130 Ω R_DS(on) reduces conduction loss by 35% vs. legacy 600 V MOSFETs, enabling 85 °C case temperature without forced air cooling.

Use Scenario: PFC boost switch in 80 PLUS Platinum-certified 1 kW server power supply.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) boost switch handling 12 A RMS input current at 265 VAC input.

Use Value: Low Q_g (84 nC) and C_iss (2400 pF) enable clean gate drive with IR11672 controller, achieving <150 mW gate loss at 100 kHz.

Motor Drive Inverter

LED Streetlight Driver

Use Scenario: Half-bridge upper switch in 750 W three-phase inverter for HVAC compressor control.

IC Role / Device Role / Timing Role: Fast-switching power stage element operating at 16 kHz PWM with 100 ns dead time.

Use Value: 427 ns t_rr and 7.2 µC Q_rr limit reverse recovery loss to <0.5 W per switch, preventing thermal runaway during overload.

Use Scenario: Isolated flyback switch in 150 W outdoor LED streetlight driver with surge immunity to 6 kV.

IC Role / Device Role / Timing Role: Primary-side switch subjected to repetitive 100 V overshoots during lightning-induced transients.

Use Value: 850 mJ E_AS rating ensures survival of 100+ unclamped inductive spikes without parameter drift or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP25NM60N	Same die, TO-220 package; R_thj-case = 0.78 °C/W identical, but requires through-hole mounting and larger heatsink footprint.	Preferred for prototyping or low-volume industrial controls where manual assembly and thermal testing are prioritized.	Select when mechanical compatibility with legacy TO-220 layouts is required and PCB space allows for through-hole footprint.
IPP60R190C6	Infineon CoolMOS™ C6; 650 V, 0.190 Ω, 21 A, Q_g = 52 nC - lower gate charge but higher R_DS(on) and no 100% avalanche rating.	Better suited for ZVS LLC resonant converters where gate loss dominates, less ideal for hard-switched PFC with high dv/dt stress.	Choose for high-frequency (>200 kHz) resonant topologies where Q_g reduction outweighs need for avalanche ruggedness.

Compared with STP25NM60N, STB25NM60N offers identical electrical specs in a smaller, surface-mount D²PAK package with superior PCB thermal coupling; versus IPP60R190C6, it trades 30% higher R_DS(on) for guaranteed avalanche capability and faster body diode recovery-critical for hard-switched industrial SMPS.

Availability

STB25NM60N is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drive inverters, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STB25NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB25NM60N belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and computing applications demanding ruggedness and thermal performance.

FAQ

What is the maximum safe operating temperature for STB25NM60N?

The absolute maximum junction temperature is 150 °C, and the device is rated for continuous operation up to this limit. Thermal design must ensure junction temperature remains below 150 °C under worst-case load, ambient, and airflow conditions. With R_thj-case = 0.78 °C/W and 160 W total dissipation at T_C = 25 °C, proper PCB copper area (≥ 10 cm² 2 oz Cu) or heatsink attachment is essential to maintain safe margins.

Does STB25NM60N require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For hard-switching at 75 kHz with a 10 V gate drive, a 4.7 Ω resistor is recommended based on datasheet test conditions (Figure 18). This value balances switching speed (t_d(on) = 24.5 ns, t_f = 24 ns) against EMI and gate driver stress; values below 2.2 Ω increase ringing risk, while above 10 Ω significantly raises switching losses.

Can STB25NM60N replace STP25NM60N in an existing TO-220 design?

No direct drop-in replacement is possible due to package incompatibility: STB25NM60N uses surface-mount D²PAK, while STP25NM60N uses through-hole TO-220. Layout redesign is required for pad geometry, thermal relief, and soldering process. However, electrical parameters (V_DSS, R_DS(on), Q_g, t_rr) are identical, so system-level performance and thermal modeling remain valid after mechanical adaptation.

Is STB25NM60N suitable for automotive applications?

STB25NM60N is not qualified to AEC-Q101 and is not specified as automotive grade. While its 150 °C T_j and avalanche rating meet some under-hood temperature requirements, ST does not guarantee performance or reliability in automotive environments. For automotive use, ST recommends AEC-Q101-qualified alternatives such as STL220N6LF8 or STW48N65M5.

STB25NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB25NM60N FAQ

1.How can I place an order for STB25NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB25NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB25NM60N reliable?

The price and inventory of STB25NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25NM60N is usually 5 days.

3.What payment methods are accepted for STB25NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB25NM60N?

STB25NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB25NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB25NM60N?

For technical support, including STB25NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25NM60N requirements.

6.How does Aetrix verify that STB25NM60N is sourced from the original manufacturer or authorized distributors?

All STB25NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25NM60N meets industry standards.

7.What is the process for return or replacement of STB25NM60N?

All STB25NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB25NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB25NM60N part is unused and in its original packaging.

Return procedure for STB25NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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