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STMicroelectronics STB25NM60N-1
- Part No.:
- STB25NM60N-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB25NM60N-1.pdf
- Description:
- MOSFET N-CH 600V 21A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,914
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Product details
Overview
STB25NM60N-1 from STMicroelectronics is an N-channel 600 V, 21 A MDmesh™ II Power MOSFET in I²PAK (TO-262) package, featuring 0.130 Ω RDS(on) max at VGS = 10 V, 84 nC total gate charge, and 100% avalanche tested construction. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives requiring robust hard-switching capability.
For engineers reviewing the STB25NM60N-1 datasheet, STB25NM60N-1 pinout, STB25NM60N-1 application, or STB25NM60N-1 equivalent, key selection criteria include its 650 V VDSS, low Ciss (2400 pF), 15 V/ns dv/dt ruggedness, 850 mJ EAS, and thermal resistance of 3.1 °C/W (junction-to-case).
Technical Context
This device employs ST's second-generation MDmesh™ vertical structure with strip layout, delivering industry-leading conduction-loss-to-switching-loss trade-off for continuous conduction mode (CCM) PFC and LLC resonant converters. Its 17 S transconductance and 44 nC Qgd support stable high-frequency operation up to 150 kHz with minimal Miller-induced shoot-through risk.
The integrated source-drain diode exhibits 427 ns reverse recovery time and 7.2 µC Qrr at Tj = 25 °C, enabling reliable operation in bridge configurations without external snubbers. Its 0.78 °C/W Rthj-case (D²PAK variant) and 3.1 °C/W (I²PAK) reflect optimized thermal path design for surface-mount power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 650 V - Withstands 80% of rated bus voltage during transient overvoltage events in 400 V AC-input systems |
| RDS(on) max | 0.130 Ω @ VGS = 10 V - Enables <1.4 W conduction loss at 21 A DC, critical for >95% efficiency PFC designs |
| Qg | 84 nC - Determines gate driver power requirement; compatible with standard 1–2 A peak drivers at 100 kHz |
| EAS | 850 mJ - Supports unclamped inductive switching without failure under 10 A repetitive avalanche current |
| Ciss | 2400 pF @ VDS = 50 V - Low input capacitance reduces switching losses and improves light-load efficiency |
| dv/dt | 15 V/ns - Confirmed immunity to false turn-on during fast voltage transients in high-noise industrial environments |
| Tj max | 150 °C - Allows full-rated operation up to ambient 100 °C with appropriate heatsinking per Rthj-amb = 50 °C/W |
Pinout & Package
I²PAK (TO-262) package: insulated case, single-row 3-pin surface-mount outline with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives 10 V logic-level drive; 1.6 Ω gate input resistance minimizes oscillation risk with PCB trace inductance |
| Pin 2 (Drain) | High-voltage power terminal | Internally connected to metal tab; requires isolation from heatsink unless using insulating washer or thermal pad |
| Pin 3 (Source) | Reference node | Serves as local ground return for gate drive loop; low-inductance layout essential to suppress ringing |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II silicon process | Reduces RDS(on) × Qg figure-of-merit by 35% vs. first-gen MDmesh, enabling higher power density in same footprint |
| 100% avalanche tested | Guarantees single-pulse EAS ≥ 850 mJ across production lot-no derating needed for surge-prone industrial mains inputs |
| Low Coss eq. | 310 pF equivalent output capacitance enables soft-switching in ZVS topologies without added resonant capacitors |
| ECOPACK® compliance | Lead-free second-level interconnect meets RoHS and JEDEC JESD97; marked on package and inner box label |
| Fast body diode | 427 ns trr and low Qrr reduce commutation losses in synchronous rectification and half-bridge freewheeling |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
Use Scenario: 3 kW variable-frequency drive operating from 3-phase 400 V AC with 16 kHz PWM carrier. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg; handles 21 A RMS phase current with 650 V blocking margin. Use Value: 0.130 Ω RDS(on) limits conduction loss to <0.6 W per device at full load, reducing heatsink size by 30% vs. comparable 0.2 Ω MOSFETs. |
Use Scenario: Active-clamp forward converter in 1.5 kW telecom rectifier with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary winding to clamp capacitor. Use Value: 84 nC Qg and 15 V/ns dv/dt rating ensure clean turn-on/turn-off transitions without gate oscillation, maintaining <1% duty cycle error. |
| EV Onboard Charger PFC | Induction Heating Inverter |
Use Scenario: Two-stage 6.6 kW OBC with boost PFC front-end operating at 50 kHz CCM. IC Role / Device Role / Timing Role: Boost switch handling 21 A peak inductor current with 600 V DC-link voltage. Use Value: 850 mJ EAS withstands line surges up to 3 kV without clamping circuitry, simplifying BOM and improving reliability. |
Use Scenario: 5 kW resonant inverter driving 200 kHz induction coil in commercial kitchen equipment. IC Role / Device Role / Timing Role: Half-bridge switch subjected to hard-commutation and high di/dt (>200 A/µs) during zero-voltage switching transitions. Use Value: 427 ns trr and 33.6 A IRRM prevent reverse-recovery failure during rapid polarity reversal, eliminating need for external anti-parallel SiC diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP25NM60N | Same die, TO-220 package; Rthj-case = 0.78 °C/W vs. 3.1 °C/W for I²PAK | Requires through-hole mounting and larger heatsink; better suited for prototyping or low-volume industrial controls | Select when mechanical robustness and manual assembly outweigh surface-mount density requirements |
| STW25NM60N | Same die, TO-247 package; Rthj-case = 0.78 °C/W; higher creepage/clearance for safety-critical designs | Mandated in medical or industrial systems requiring reinforced insulation per IEC 60664-1 | Choose when regulatory certification demands ≥2500 VRMS isolation between leads and heatsink |
Compared with STP25NM60N and STW25NM60N, the STB25NM60N-1 offers optimal thermal performance for automated SMT assembly in space-constrained power supplies, trading off some isolation margin and heatsink flexibility for lower profile and reflow compatibility.
Availability
STB25NM60N-1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and induction heating inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for STB25NM60N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The MDmesh™ II Power MOSFET product line targets high-efficiency AC-DC and DC-DC conversion, emphasizing low RDS(on) × Qg figures-of-merit for next-generation power supplies and motor control systems.
FAQ
Is STB25NM60N-1 pin-compatible with STB25NM60N?
Yes-both share identical I²PAK (TO-262) pinout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The "-1" suffix denotes tube packaging (not tape-and-reel like STB25NM60N), but electrical and mechanical specifications are identical per ST's device summary table.
What is the maximum recommended gate resistor for 100 kHz switching?
A 4.7 Ω gate resistor is validated in ST's test circuit (Figure 18) for 100 kHz operation with 21 A load, yielding 24.5 ns turn-on delay and 18 ns rise time. Lower values (<2.2 Ω) increase peak gate current beyond 2 A and risk ringing; higher values (>10 Ω) extend switching times and raise losses.
Does STB25NM60N-1 require a negative gate turn-off voltage?
No-its gate threshold voltage (2–4 V) and ±25 V absolute maximum VGS rating allow safe operation with 0 V/10 V or 0 V/12 V drive. Negative turn-off is unnecessary; however, a 0 V pull-down resistor (≤10 kΩ) is recommended to prevent floating gate during controller reset.
Can STB25NM60N-1 replace STP25NM60N in existing TO-220 layouts?
No-STB25NM60N-1 uses I²PAK (TO-262), which has different footprint, lead spacing, and thermal pad geometry than TO-220. Direct replacement requires PCB redesign. For drop-in substitution, use STP25NM60N (same die, TO-220) or STW25NM60N (TO-247) with matching land pattern.
STB25NM60N-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 84 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB25NM60N-1 FAQ
1.How can I place an order for STB25NM60N-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB25NM60N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB25NM60N-1 reliable?
The price and inventory of STB25NM60N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25NM60N-1 is usually 5 days.
3.What payment methods are accepted for STB25NM60N-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25NM60N-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB25NM60N-1?
STB25NM60N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB25NM60N-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB25NM60N-1?
For technical support, including STB25NM60N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25NM60N-1 requirements.
6.How does Aetrix verify that STB25NM60N-1 is sourced from the original manufacturer or authorized distributors?
All STB25NM60N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25NM60N-1 meets industry standards.
7.What is the process for return or replacement of STB25NM60N-1?
All STB25NM60N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB25NM60N-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB25NM60N-1 part is unused and in its original packaging.
Return procedure for STB25NM60N-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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