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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB25NM60ND

Name: STB25NM60ND
Brand: STMicroelectronics
SKU: STB25NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB25NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB25NM60ND.pdf

Description:: MOSFET N-CH 600V 21A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,335

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Product details

Overview

STB25NM60ND from STMicroelectronics is a 600 V, 25 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.22 Ω R_DS(on) max at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness for hard-switching offline SMPS applications.

For engineers reviewing the STB25NM60ND datasheet, STB25NM60ND pinout, STB25NM60ND application, or STB25NM60ND equivalent, this device is selected for high-efficiency AC-DC adapters, LED drivers, and industrial power supplies where low conduction loss, fast switching, and robust unclamped inductive switching capability are required.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between R_DS(on), Q_g, and E_oss, enabling reduced switching losses in continuous conduction mode (CCM) PFC and LLC resonant converters. Its 600 V V_DSS rating supports universal-input (85–265 V_AC) operation with sufficient voltage margin.

The device features an integrated fast-recovery body diode with t_rr = 120 ns and Q_rr = 390 nC, minimizing reverse recovery stress in bridge configurations. It is qualified per JEDEC JESD47 and supports 175 °C maximum junction temperature operation under pulsed conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input with ≥2× safety margin over peak line voltage
I_D (T_C = 25 °C)	25 A - enables 150–200 W continuous output in compact TO-220FP heatsink layouts
R_DS(on) max	0.22 Ω @ V_GS = 10 V - reduces conduction loss to <1.4 W at 10 A DC, improving thermal headroom
Q_g	45 nC - allows efficient gate drive with standard 1-A peak drivers at 100 kHz switching
E_oss	32 nJ @ 400 V - lowers capacitive turn-on loss in hard-switched topologies
t_rr	120 ns - limits diode reverse recovery current overshoot in half-bridge phase-shifted converters

Pinout & Package

Supplied in TO-220FP (Full-Pak) package: insulated backside, vertical mounting, no heatsink isolation required. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives logic-level or driver signal; requires 10 V for full enhancement; Miller plateau at ~4.5 V
Drain (Metal tab / Pin 2)	High-side power node	Internally connected to MOSFET drain; electrically active; must be isolated from heatsink unless using insulating pad
Source (Pin 3)	Reference node	Common return path for gate drive and load current; defines local ground reference for driver IC

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse UIS robustness up to 250 mJ at T_j = 25 °C, enabling reliable operation in unclamped inductive loads
Low gate charge (Q_g = 45 nC)	Reduces driver power dissipation and enables higher frequency operation without excessive gate loss
Fast body diode (t_rr = 120 ns)	Minimizes commutation loss and EMI in synchronous rectification and bridge circuits
TO-220FP insulated package	Eliminates need for insulating washers in PCB-mounted designs, simplifying thermal and mechanical layout

Applications

LED Driver Power Stage

Industrial AC-DC PSU

Use Scenario: Constant-current buck/boost LED driver for street lighting operating from 230 V_AC mains.

IC Role / Device Role / Timing Role: Primary switch in primary-side regulation topology, handling 10–15 A peak drain current at 65–100 kHz.

Use Value: Low R_DS(on) minimizes heat generation in enclosed fixtures; avalanche rating ensures reliability during lamp open-circuit transients.

Use Scenario: 150 W open-frame power supply for PLC controllers with universal AC input and 24 V/6 A output.

IC Role / Device Role / Timing Role: Main switch in CCM flyback converter, conducting 12 A RMS with 400 V DC bus.

Use Value: Optimized Q_g/R_DS(on) balance reduces total switching + conduction loss to <2.1 W, easing thermal design.

Offline SMPS Adapter

Motor Drive Inverter Stage

Use Scenario: Compact 65 W USB-C PD adapter with active clamp flyback architecture.

IC Role / Device Role / Timing Role: Clamp switch managing energy recycling during transition, rated for 600 V blocking and 8 A pulse current.

Use Value: Fast body diode and low E_oss reduce clamp loop losses and improve efficiency above 92% at full load.

Use Scenario: 3-phase inverter stage in HVAC blower motor control (≤500 W).

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter, switching at 16 kHz with 10 A peak current.

Use Value: TO-220FP insulation eliminates creepage concerns on PCB; 175 °C T_j rating supports sustained operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	Same V_DSS and R_DS(on), but 60 nC Q_g and slower t_rr (220 ns); DPAK package	Limited to lower-frequency (<60 kHz) flyback due to higher switching loss	Select when board space is constrained and thermal budget allows larger R_DS(on) derating
FDPF18N50	500 V V_DSS, 0.28 Ω R_DS(on), 42 nC Q_g; TO-220FP package	Not suitable for universal-input 230 V_AC designs due to insufficient voltage margin	Prefer only for 115 V_AC-only or DC-fed systems with ≤400 V bus

Compared with STP20NM60FD and FDPF18N50, STB25NM60ND delivers superior 600 V ruggedness, lower conduction loss, and faster body diode recovery-making it the optimal choice for high-efficiency, universal-input offline converters requiring long-term reliability under transient stress.

Availability

STB25NM60ND is available at Aetrix Electronics and suitable for LED drivers, industrial AC-DC power supplies, and offline SMPS adapters requiring stable component supply and guaranteed long-term manufacturability.

Supply support for STB25NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB25NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power conversion in cost-sensitive industrial and lighting applications.

FAQ

What is the maximum recommended gate-source voltage for STB25NM60ND?

The absolute maximum V_GS is ±25 V, but ST recommends limiting continuous gate drive to 10–15 V for reliable long-term operation. Exceeding 20 V risks oxide degradation, especially at elevated temperatures. The device fully enhances at V_GS ≥ 10 V, with threshold voltage specified at 2–4 V.

Does STB25NM60ND require a gate resistor for stability in hard-switching applications?

Yes-a 10–22 Ω series gate resistor is recommended to dampen parasitic oscillation and limit peak gate current during fast transitions. This value balances switching speed control against driver capability and EMI suppression, particularly when used with UC384x or L6565-based controllers.

Can STB25NM60ND be used in synchronous rectification topologies?

No-it is not optimized for synchronous rectification due to its relatively high Q_rr and body diode forward voltage. Its body diode is intended for clamping and freewheeling, not bidirectional conduction. For SR applications, ST recommends dedicated low-V_F trench MOSFETs like STL10DN6LF5.

Is the TO-220FP package of STB25NM60ND lead-free and RoHS compliant?

Yes-the device is manufactured in full compliance with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-220FP package uses matte tin-plated leads and Pb-free solderable terminations, with MSL level 1 rating and no moisture sensitivity restrictions.

STB25NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB25NM60ND FAQ

1.How can I place an order for STB25NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STB25NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB25NM60ND reliable?

The price and inventory of STB25NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB25NM60ND is usually 5 days.

3.What payment methods are accepted for STB25NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB25NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB25NM60ND?

STB25NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB25NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB25NM60ND?

For technical support, including STB25NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB25NM60ND requirements.

6.How does Aetrix verify that STB25NM60ND is sourced from the original manufacturer or authorized distributors?

All STB25NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB25NM60ND meets industry standards.

7.What is the process for return or replacement of STB25NM60ND?

All STB25NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB25NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB25NM60ND part is unused and in its original packaging.

Return procedure for STB25NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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