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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB26NM60ND

Name: STB26NM60ND
Brand: STMicroelectronics
SKU: STB26NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB26NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB26NM60ND.pdf

Description:: MOSFET N-CH 600V 21A D2PAK

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Product details

Overview

STB26NM60ND from STMicroelectronics is an N-channel 600 V FDmesh™ II Power MOSFET in D²PAK (TO-263) package, featuring 0.145 Ω typ. R_DS(on), 21 A continuous drain current at T_C = 25 °C, and intrinsic fast-recovery body diode. It is engineered for high-efficiency switching in bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STB26NM60ND datasheet, STB26NM60ND pinout, STB26NM60ND application, or STB26NM60ND equivalent, key selection criteria include avalanche ruggedness (100 mJ E_AS), dv/dt capability (40 V/ns), low gate charge (54.6 nC), and thermal resistance (0.66 °C/W j-case).

Technical Context

This device employs ST's second-generation MDmesh™ strip-layout vertical structure to achieve ultra-low on-resistance and superior switching performance. Its integrated fast-recovery body diode enables efficient synchronous rectification and reduces external snubber requirements in resonant topologies.

The MOSFET supports high-voltage hard-switching up to 600 V with guaranteed 100% avalanche testing and robust dv/dt immunity (40 V/ns under defined conditions). Gate threshold voltage is tightly specified (3–5 V), ensuring stable turn-on behavior across temperature and drive variations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for primary-side SMPS and industrial HV DC-DC stages
R_DS(on) typ.	0.145 Ω - Enables <1.5 W conduction loss at 21 A, critical for thermal management in compact power supplies
Q_g	54.6 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz designs
E_AS	100 mJ - Confirmed single-pulse avalanche energy tolerance, supporting unclamped inductive load reliability
R_thj-case	0.66 °C/W - Enables >150 W dissipation with standard heatsinking, suitable for high-power density modules
trr	170 ns (T_J = 25 °C) - Fast body diode recovery minimizes switching losses in LLC and phase-shifted full-bridge converters
dv/dt ruggedness	40 V/ns - Sustains rapid voltage transients without spurious turn-on, essential for high-frequency hard-switched PFC

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended heat transfer via exposed drain tab; thermally enhanced for PCB-mounted high-power applications.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V drive; low input capacitance (1817 pF) eases driver selection
2 (S)	Source	Reference node for gate drive and current sensing; connects to power ground in low-side configurations
3 (D, Tab)	Drain	Main high-voltage power path; exposed metal tab is electrically connected to drain and serves as primary thermal interface

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against transient overvoltage events without derating, reducing need for external clamping
Low Q_g and C_iss	54.6 nC total gate charge and 1817 pF input capacitance enable efficient 300–500 kHz operation with standard gate drivers
Intrinsic fast-recovery body diode	170 ns trr and 1.39 µC Q_rr support zero-voltage switching in resonant converters without external diodes
FDmesh™ II technology	Strip-layout vertical structure delivers 0.145 Ω R_DS(on) at 600 V, improving power density vs. planar predecessors
High dv/dt immunity	40 V/ns rating prevents false triggering during fast voltage transitions in high-side or half-bridge configurations

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW telecom rectifier modules operating at 100–300 kHz with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling 600 V DC bus; synchronized with complementary MOSFETs for ZVS operation.

Use Value: Low R_DS(on) and fast trr reduce conduction and switching losses, enabling >96% efficiency at full load.

Use Scenario: Active clamp forward or LLC resonant converter in 80 PLUS Titanium server PSUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side high-side switch with fast body diode recovery.

Use Value: Intrinsic 170 ns trr eliminates need for discrete Schottky diodes, simplifying layout and improving thermal coupling.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: 3-phase IGBT/MOSFET inverter stage for HVAC compressors and industrial pumps (5–15 kW range).

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack module configuration; handles 21 A RMS motor current with peak surge capability.

Use Value: 100 mJ E_AS withstands motor inductive kickback during fault conditions without failure.

Use Scenario: DC-DC boost stage in string inverters interfacing PV arrays (600–1000 V DC input).

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter; operates with 100% duty-cycle margin at elevated ambient temperatures.

Use Value: 0.66 °C/W R_thj-case allows direct mounting to aluminum heatsink, maintaining T_J < 130 °C at 15 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP26NM60ND	Same die, TO-220 package; R_thj-case = 0.66 °C/W but higher R_thj-amb (50 °C/W); no tape-and-reel option	Preferred for prototyping or low-volume through-hole assembly; less suitable for automated SMT production	Select when manual soldering or heatsink mounting without PCB thermal pads is required
IPP60R190C6	600 V, 0.190 Ω R_DS(on), 21 A, TO-220; CoolMOS™ C6 technology; lower Q_g (42 nC) but higher R_DS(on)	Better suited for high-frequency (>500 kHz) PFC where gate charge dominates losses, not conduction	Choose for PFC stages prioritizing switching efficiency over conduction loss at high line voltage

Compared with STP26NM60ND, STB26NM60ND offers automated SMT compatibility and lower board-level thermal resistance via D²PAK copper area; versus IPP60R190C6, it delivers lower conduction loss at cost of higher gate drive demand-optimal for medium-frequency, high-current DC-DC stages.

Availability

STB26NM60ND is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server & telecom rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STB26NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors.

This device belongs to ST's FDmesh™ II Power MOSFET product line, developed specifically for high-efficiency, high-reliability switching power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for STB26NM60ND at 100 °C case temperature?

The maximum continuous drain current is 13 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures junction temperature remains within the 150 °C absolute maximum under sustained operation with appropriate heatsinking.

Does STB26NM60ND require a negative gate voltage for reliable turn-off?

No. The device specifies ±25 V gate-source voltage rating, but turn-off is fully achieved at V_GS = 0 V. A negative gate bias is not required; however, driving to –5 V may improve noise immunity in high-dv/dt environments, though it is not necessary for functional operation per datasheet conditions.

Can STB26NM60ND be used in avalanche mode repeatedly?

The datasheet confirms 100% avalanche testing and specifies 4 A repetitive avalanche current (I_AR) with pulse width limited by junction temperature. Repetitive avalanche operation is permitted only within Safe Operating Area (SOA) boundaries shown in Figure 2 and must respect thermal cycling limits to avoid cumulative degradation.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes. With 170 ns reverse recovery time (trr) and 1.39 µC reverse recovery charge (Q_rr) at 25 °C, the intrinsic body diode meets timing requirements for synchronous rectification in 100–300 kHz LLC converters. Performance degrades at elevated temperature (trr = 230 ns at 150 °C), so layout and thermal design must maintain low T_J.

STB26NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 175mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54.6 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1817 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB26NM60ND FAQ

1.How can I place an order for STB26NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STB26NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB26NM60ND reliable?

The price and inventory of STB26NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB26NM60ND is usually 5 days.

3.What payment methods are accepted for STB26NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB26NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB26NM60ND?

STB26NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB26NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB26NM60ND?

For technical support, including STB26NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB26NM60ND requirements.

6.How does Aetrix verify that STB26NM60ND is sourced from the original manufacturer or authorized distributors?

All STB26NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB26NM60ND meets industry standards.

7.What is the process for return or replacement of STB26NM60ND?

All STB26NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB26NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB26NM60ND part is unused and in its original packaging.

Return procedure for STB26NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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