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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB270N4F3

Name: STB270N4F3
Brand: STMicroelectronics
SKU: STB270N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB270N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB270N4F3.pdf

Description:: MOSFET N-CH 40V 160A D2PAK

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Product details

Overview

STB270N4F3 from STMicroelectronics is an automotive-grade N-channel 40 V Power MOSFET in D²PAK (TO-263) package, featuring 1.6 mΩ typ. R_DS(on), 160 A continuous drain current, and AEC-Q101 qualification. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and motor control in engine management and battery disconnect systems.

For engineers reviewing the STB270N4F3 datasheet, STB270N4F3 pinout, STB270N4F3 application, or STB270N4F3 equivalent, key selection criteria include avalanche ruggedness (1 J single-pulse), gate charge (110 nC typ.), thermal resistance (0.45 °C/W j-case), and diode recovery performance (70 ns trr at 150 °C).

Technical Context

This device employs STripFET™ F3 technology to optimize cell density and trench geometry, achieving ultra-low R_DS(on) while maintaining robust safe operating area (SOA) up to 640 A pulsed. Its gate threshold voltage (2–4 V) supports standard 10 V logic-level drive without requiring dedicated level-shifting circuitry.

The integrated body diode exhibits fast reverse recovery (t_rr = 70 ns, Q_rr = 225 nC) under high di/dt (100 A/µs) and elevated junction temperature (150 °C), enabling reliable synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and transient clamping to ISO 7637-2 Level 5a.
R_DS(on) max	2.0 mΩ - Ensures ≤ 51.2 W conduction loss at 160 A, critical for thermal management in compact power modules.
I_D cont @ T_C=100°C	160 A - Sustains full rated current at high case temperatures typical in under-hood environments.
E_AS	1 J - Confirmed unclamped inductive switching capability, eliminating need for external snubbers in solenoid drivers.
Q_g	110 nC typ. - Enables efficient gate driving with moderate-power drivers (e.g., STGAP2SICSN), reducing switching losses in 100–500 kHz applications.
t_rr	70 ns - Limits diode reverse recovery loss and EMI generation during hard commutation in BLDC inverters.
R_thj-case	0.45 °C/W - Allows direct heatsink mounting to achieve <100 °C junction rise at 330 W dissipation, supporting high-power density designs.

Pinout & Package

The STB270N4F3 is housed in a surface-mount D²PAK (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged as follows:

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power output terminal / heatsink interface	Exposed copper pad on underside - must be soldered to large PCB copper area or heatsink for thermal and current path integrity.
Source (S)	Power return path / reference node for gate drive	Two parallel pins (pins 2 & 3) - minimizes source inductance to preserve switching speed and reduce ringing.
Gate (G)	Control input for channel modulation	Single pin (pin 1) - requires low-inductance gate loop layout to avoid oscillation during 110 nC charge/discharge transients.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood operation across -55 °C to 175 °C junction range, including temperature cycling and HTRB stress.
100% avalanche tested	Each unit subjected to unclamped inductive switching at rated conditions - guarantees robustness in fault-tolerant motor drives.
Low Q_gd/Q_gs ratio	25 nC / 27 nC - suppresses Miller-induced turn-on risk during high dv/dt transitions in half-bridge configurations.
Enhanced SOA at high T_j	Rated 640 A pulsed current at T_C = 100 °C - enables short-circuit withstand time >2 µs in overcurrent protection circuits.

Applications

Engine Start-Stop Control

12 V Battery Disconnect Switch

Use Scenario: Managing main battery connection during engine cranking and idle-stop cycles in modern ICE vehicles.

IC Role / Device Role / Timing Role: High-side power switch controlling bidirectional 160 A load current with fast turn-off (<130 ns total delay + fall) to prevent voltage sag.

Use Value: Low R_DS(on) minimizes voltage drop during cold-cranking (≤0.256 V at 160 A), preserving starter solenoid engagement.

Use Scenario: Isolating auxiliary loads (e.g., infotainment, ADAS ECUs) during deep sleep to prevent parasitic drain.

IC Role / Device Role / Timing Role: Low-leakage (100 µA max at 125 °C) N-channel switch placed between battery and load ground return path.

Use Value: Gate threshold compatibility with 3.3 V MCU GPIO allows direct control without level shifter, reducing BOM count.

Electric Power Steering (EPS) Motor Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: Half-bridge high-side switch in 3-phase inverter supplying 10–15 kW assist torque to steering column.

IC Role / Device Role / Timing Role: Fast-switching (t_f = 45 ns) MOSFET handling 100 A peak phase current with minimal shoot-through risk.

Use Value: Low Q_rr (225 nC) reduces body diode conduction loss during dead-time, improving efficiency by ~0.8% at 10 kHz PWM.

Use Scenario: Primary-side synchronous rectifier in isolated LLC resonant converter stepping 48 V bus down to 12 V for legacy systems.

IC Role / Device Role / Timing Role: Secondary-side N-channel switch replacing Schottky diodes, driven by transformer-coupled gate signal.

Use Value: 1.6 mΩ R_DS(on) cuts conduction loss by >65% vs. 40 V Schottky, enabling >96% conversion efficiency at 5 kW output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP220N04S4L	R_DS(on) = 2.2 mΩ (max), Q_g = 105 nC, same D²PAK package	Lower gate charge but higher on-resistance - better for high-frequency switching, worse for high-current conduction	Prefer when operating >300 kHz with strict EMI limits; avoid in >120 A continuous applications due to higher I²R loss.
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 1.8 mΩ (max), Q_g = 125 nC, D²PAK-7L variant with Kelvin source	Kelvin source improves gate drive stability but adds layout complexity; higher Q_g increases driver power demand	Select for precision current sensing or paralleled configurations where source inductance must be minimized; not recommended for cost-sensitive volume production.

Compared with IPP220N04S4L and NTMFS4C09NT1G, the STB270N4F3 offers the best balance of ultra-low R_DS(on), proven automotive reliability, and gate drive simplicity - making it optimal for high-current, thermally constrained 12 V/48 V power switches where conduction loss dominates system efficiency.

Availability

STB270N4F3 is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply and long-term automotive lifecycle support.

Supply support for STB270N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities.

The STripFET™ F3 product line targets high-efficiency power conversion in automotive and industrial applications, emphasizing ruggedness, low R_DS(on), and fast switching for next-generation electrified systems.

FAQ

Is the STB270N4F3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?

Yes. With its 1.6 mΩ typ. R_DS(on), 70 ns t_rr, and 225 nC Q_rr, the STB270N4F3 reduces conduction and recovery losses significantly versus Schottky diodes. Its 40 V V_DS rating provides sufficient margin for 48 V bus transients, and the D²PAK package supports high-current PCB routing and thermal sinking required in 5 kW converters.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±20 V per the datasheet. During transient events such as ESD or gate driver overshoot, sustained voltage beyond this limit risks oxide breakdown. Designers must use gate resistors and TVS clamps (e.g., 15 V unidirectional) to ensure V_GS remains within specification, especially in noisy automotive environments.

Does the STB270N4F3 require a negative gate voltage for reliable turn-off in high-di/dt applications?

No. The device's V_GS(th) range (2–4 V) and low Miller capacitance (C_rss = 47 pF) enable clean turn-off with 0 V gate drive. However, applying –5 V enhances noise immunity in high dv/dt half-bridge layouts - this is optional, not required, and does not improve R_DS(on) or switching speed.

How is the 100% avalanche test performed and what does it guarantee?

Each STB270N4F3 undergoes unclamped inductive switching (UIS) testing at rated V_DS and I_D with energy equal to 1 J. This verifies robustness against inductive kickback during short-circuit faults. It guarantees no parametric shift or functional failure after one event - essential for solenoid drivers and motor phase protection where external fusing is impractical.

STB270N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB270N4F3 FAQ

1.How can I place an order for STB270N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB270N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB270N4F3 reliable?

The price and inventory of STB270N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB270N4F3 is usually 5 days.

3.What payment methods are accepted for STB270N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB270N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB270N4F3?

STB270N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB270N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB270N4F3?

For technical support, including STB270N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB270N4F3 requirements.

6.How does Aetrix verify that STB270N4F3 is sourced from the original manufacturer or authorized distributors?

All STB270N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB270N4F3 meets industry standards.

7.What is the process for return or replacement of STB270N4F3?

All STB270N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB270N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB270N4F3 part is unused and in its original packaging.

Return procedure for STB270N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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