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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB28N60M2

Name: STB28N60M2
Brand: STMicroelectronics
SKU: STB28N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB28N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB28N60M2.pdf

Description:: MOSFET N-CH 600V 22A D2PAK

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Product details

Overview

STB28N60M2 from STMicroelectronics is an N-channel 600 V, 135 mΩ typ. (150 mΩ max), 22 A Power MOSFET using MDmesh M2 technology in D²PAK (TO-263) package. It delivers low gate charge (36 nC), optimized Coss profile (70 pF), and 100% avalanche-tested ruggedness for high-efficiency hard-switched PFC and SMPS primary-side switching in industrial power supplies and solar inverters.

For engineers reviewing the STB28N60M2 datasheet, STB28N60M2 pinout, STB28N60M2 application, or STB28N60M2 equivalent, key selection criteria include its 600 V V_DS, 135 mΩ R_DS(on) at 10 V_GS, 36 nC total gate charge, 15 V/ns diode recovery dv/dt capability, and D²PAK thermal resistance of 0.74 °C/W junction-to-case.

Technical Context

This device employs ST's MDmesh M2 strip-based vertical structure to simultaneously reduce R_DS(on) and output capacitance-achieving 70 pF C_oss and 1440 pF C_iss at 100 V_DS. Its Zener-protected gate enables ±25 V_GS tolerance and robust ESD immunity without external clamping.

The integrated body diode features 350 ns reverse recovery time (T_J = 25 °C), 4.7 µC Q_rr, and 27 A I_RRM, supporting fast, low-loss synchronous rectification and flyback snubberless operation. Avalanche rating of 350 mJ ensures reliable unclamped inductive switching in offline converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full-line surge in 400 V DC bus applications without derating
R_DS(on) max	150 mΩ - Enables <1.5 W conduction loss at 22 A continuous drain current
Q_g	36 nC - Reduces gate drive power and enables use with low-current drivers (e.g., 1 A peak)
C_oss	70 pF - Minimizes turn-off energy loss (E_oss = ½·C_oss·V_DS² ≈ 5 µJ @ 480 V)
E_AS	350 mJ - Supports single-pulse avalanche survival in 50 V inductive load tests
T_J max	150 °C - Allows operation in sealed enclosures with limited airflow
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during fast voltage transients in bridge configurations

Pinout & Package

D²PAK (TO-263) package with exposed drain tab (pin 2) for low-thermal-resistance mounting; compact surface-mount footprint compatible with automated assembly and high-power density PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Exposed metal tab electrically connected to drain; primary thermal path to heatsink/PCB copper
G (Pin 1)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; Zener-protected to ±25 V
S (Pin 3)	Source	Reference node for gate drive and current sensing; tied to power ground in common-source configuration

Key Features

Feature	Design Value
MDmesh M2 strip layout	Reduces R_DS(on) × C_oss figure-of-merit by 35% vs. prior-generation 600 V MOSFETs
Zener-protected gate	Eliminates need for external gate clamp diodes in noisy industrial environments
100% avalanche tested	Guarantees minimum 350 mJ single-pulse energy handling across production lot
Optimized C_oss profile	Enables >95% efficiency in 100 kHz LLC resonant converters with minimal dead-time loss
Low Q_gd/Q_gs ratio	16 nC / 7.2 nC = 2.22 - Improves Miller immunity and reduces risk of shoot-through in half-bridge

Applications

Industrial AC-DC Power Supply

Solar String Inverter DC-DC Stage

Use Scenario: Primary-side switch in 500–1000 W active-clamp forward or LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element controlling energy transfer from bulk DC to transformer primary.

Use Value: 135 mΩ R_DS(on) and 36 nC Q_g enable >94% full-load efficiency at 100 kHz while maintaining <85 °C case temperature on 2-layer FR-4.

Use Scenario: Boost switch in MPPT stage of string inverter handling up to 1500 V DC input.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing variable PV array voltage under partial shading.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during rapid irradiance changes; 350 mJ E_AS absorbs inductive spikes from long PV cable runs.

Server PSU Front-End PFC

EV On-Board Charger (OBC) AC-DC Stage

Use Scenario: Switch in continuous conduction mode (CCM) boost PFC operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switching device shaping input current waveform to meet IEC 61000-3-2 Class A harmonic limits.

Use Value: Low C_oss (70 pF) minimizes turn-off loss; Zener protection sustains gate integrity during line surges up to ±4 kV (IEC 61000-4-5).

Use Scenario: Primary-side switch in dual-phase interleaved PFC + LLC combo for 6.6 kW OBC.

IC Role / Device Role / Timing Role: High-reliability power switch rated for automotive temperature cycling (-40 to 150 °C).

Use Value: 150 °C T_J max and 0.74 °C/W R_thJC support 22 A continuous current in thermally constrained automotive modules without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP28N60M2	Same die, TO-220 package; R_thJC = 0.74 °C/W but higher R_thJA (50 °C/W vs. D²PAK's 30 °C/W on FR-4)	Better suited for prototyping and low-volume through-hole assembly; less suitable for high-density SMT designs	Select when mechanical mounting constraints favor through-hole or when heatsink interface uses screw-down TO-220 clip
IPW60R099P7XKSA1	Infineon CoolMOS™ P7; 99 mΩ R_DS(on), 42 nC Q_g, 650 V rating; higher gate charge increases driver loss	Lower R_DS(on) improves conduction loss at light loads but higher C_oss (105 pF) raises turn-off loss above 75 kHz	Prefer for <60 kHz designs where conduction loss dominates; avoid in >80 kHz LLC due to elevated E_oss

Compared with STP28N60M2, STB28N60M2 offers superior thermal performance in SMT layouts and smaller board area; versus IPW60R099P7XKSA1, it trades 14% higher R_DS(on) for 14% lower Q_g and 33% lower C_oss, making it more efficient above 75 kHz switching.

Availability

STB28N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar string inverters, and EV on-board chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB28N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in 400–800 V DC bus systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB28N60M2 supports 14 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9931 Rev 5. This derating reflects thermal limitations of the D²PAK package; at T_C = 25 °C, the rating is 22 A. Designers must verify safe operating area (SOA) curves in Figure 1 for pulsed conditions.

Does STB28N60M2 require external gate protection?

No-STB28N60M2 integrates Zener diode gate protection rated for ±25 V_GS, eliminating the need for external gate clamp components in standard industrial applications. This feature is confirmed in the "Features" section and electrical ratings table (V_GS = ±25 V absolute maximum).

How does its avalanche capability compare to STP28N60M2?

Both share identical die and avalanche specifications: 3.6 A repetitive I_AR and 350 mJ single-pulse E_AS (Table 3). The difference lies only in package thermal resistance-D²PAK (STB28N60M2) and TO-220 (STP28N60M2) deliver identical avalanche energy handling per pulse, but D²PAK achieves faster heat dissipation during repetitive events.

Can STB28N60M2 be used in zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (70 pF) and low Q_gd/Q_gs ratio (2.22) make it well-suited for ZVS in phase-shifted full-bridge and LLC resonant converters. The 350 ns diode t_rr and 4.7 µC Q_rr further support soft commutation; however, designers must ensure gate drive timing accommodates the 100 ns t_d(off) delay.

STB28N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB28N60M2 FAQ

1.How can I place an order for STB28N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB28N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB28N60M2 reliable?

The price and inventory of STB28N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB28N60M2 is usually 5 days.

3.What payment methods are accepted for STB28N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB28N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB28N60M2?

STB28N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB28N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB28N60M2?

For technical support, including STB28N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB28N60M2 requirements.

6.How does Aetrix verify that STB28N60M2 is sourced from the original manufacturer or authorized distributors?

All STB28N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB28N60M2 meets industry standards.

7.What is the process for return or replacement of STB28N60M2?

All STB28N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB28N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB28N60M2 part is unused and in its original packaging.

Return procedure for STB28N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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