STMicroelectronics STB28N65M2

Overview

STB28N65M2 from STMicroelectronics is an N-channel 650 V, 20 A Power MOSFET using MDmesh M2 technology in D²PAK (TO-263) package, with 150 mΩ typical R_DS(on), 35 nC total gate charge, and 100% avalanche tested. It serves as a high-voltage switching device in PFC and LLC resonant converters for industrial SMPS and solar inverters.

For engineers reviewing the STB28N65M2 datasheet, STB28N65M2 pinout, STB28N65M2 application, or STB28N65M2 equivalent, key selection criteria include avalanche ruggedness (760 mJ E_AS), C_oss profile (60 pF), dv/dt immunity (50 V/ns), and Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its low Q_gd/Q_gs ratio (15 nC / 6 nC) enables fast, controllable switching with reduced Miller-induced turn-off delay.

The integrated Zener-protected gate ensures ±25 V V_GS robustness, and its 150 °C maximum junction temperature supports operation in thermally constrained industrial environments. The 100% unclamped inductive avalanche test validates reliability under hard-switching fault conditions.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP28N65M2, STB28N65M2 offers superior thermal performance in SMT form factor and tighter gate drive compatibility; versus IPW65R090CFD7, it trades higher R_DS(on) for lower Q_g and better dv/dt ruggedness-favoring 100–300 kHz hard- and soft-switching applications.

Availability

STB28N65M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC-DC boost converters, and EV on-board chargers requiring stable component supply and long-term production continuity.

Supply support for STB28N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB28N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–650 V industrial power conversion systems.

FAQ

What is the maximum continuous drain current for STB28N65M2 at 100 °C case temperature?

The maximum continuous drain current is 13 A at T_C = 100 °C, as specified in Table 1 of DS10760 Rev 2. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be applied in thermal design calculations for sustained operation.

Does STB28N65M2 have an integrated body diode, and what are its key recovery parameters?

Yes, it features an integral source-drain diode rated for 20 A continuous and 80 A pulsed current. Key recovery specs include 384 ns trr and 5.7 µC Q_rr at T_J = 25 °C, rising to 544 ns and 8.2 µC at 150 °C-critical for snubberless flyback and LLC designs.

Can STB28N65M2 be used in place of a SiC MOSFET in a 650 V PFC circuit?

No-it is a silicon superjunction MOSFET, not a wide-bandgap device. While it delivers excellent 650 V performance, it lacks the higher T_J, lower Q_rr, and faster switching of SiC. Use only where 100–300 kHz operation and cost sensitivity outweigh the need for >500 kHz or >175 °C junction operation.

Is the D²PAK tab electrically isolated, and how is it connected internally?

The D²PAK tab is not electrically isolated: it is internally bonded to the drain (pin 2). This provides low-inductance, low-thermal-resistance connection to heatsinks or copper planes, but requires proper insulation between tab and heatsink if the drain node is not at chassis ground potential.