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STMicroelectronics STB28NM60ND
- Part No.:
- STB28NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB28NM60ND.pdf
- Description:
- MOSFET N-CH 600V 23A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,427
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Product details
Overview
STB28NM60ND from STMicroelectronics is an N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFET in D²PAK (TO-263) package, designed for high-efficiency switching in bridge topologies and ZVS phase-shift converters. It features intrinsic fast-recovery body diode, 100% avalanche tested operation, low gate charge (62.5 nC), and high dv/dt capability (45 V/ns).
For engineers reviewing the STB28NM60ND datasheet, STB28NM60ND pinout, STB28NM60ND application, or STB28NM60ND equivalent, this device is selected for high-voltage SMPS, industrial motor drives, and resonant converter designs where low conduction loss, robust avalanche immunity, and fast diode recovery are critical.
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical strip layout, enabling ultra-low RDS(on) (0.13 Ω typ.) while maintaining 600 V blocking capability. Its optimized capacitance profile (Ciss = 2090 pF, Crss = 5.5 pF) supports high-frequency hard-switching and soft-switching topologies.
The integrated fast-recovery body diode delivers trr = 170 ns and Qrr = 1160 nC at 25 °C, reducing switching losses in synchronous rectification and bidirectional power flow applications. Thermal resistance Rthj-case is 0.66 °C/W, enabling high-power operation with standard heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Sustains full mains-derived DC bus voltages in 400 V AC input systems with margin. |
| RDS(on) max | 0.150 Ω - Limits conduction loss to ≤7.9 W at 23 A continuous drain current (TC = 25 °C). |
| Qg | 62.5 nC - Enables efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz switching frequencies. |
| trr | 170 ns - Reduces turn-on loss in inductive switching and minimizes voltage overshoot during diode commutation. |
| EAS | 450 mJ - Withstands unclamped inductive energy without failure, supporting robust ZVS and LLC startup behavior. |
| Rthj-case | 0.66 °C/W - Allows 190 W total dissipation at TC = 25 °C, suitable for compact heatsink designs in 500–1000 W converters. |
| ID (cont) | 23 A - Supports continuous output currents up to ~1.5 kW in half-bridge configurations with forced air cooling. |
Pinout & Package
D²PAK (TO-263) package: surface-mount, single-row 3-lead outline with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2). Standard JEDEC MO-211AC footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | High-impedance control terminal; requires 10 V gate drive for full enhancement; 4.7 Ω gate input resistance limits ringing. |
| 2 | Drain (Tab) | Main high-side power path; thermally and electrically tied to PCB copper pour; handles full 600 V blocking and 23 A current. |
| 3 | Source | Reference node for gate drive and current sensing; connects to low-side switch or ground return; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Intrinsic fast-recovery body diode | trr = 170 ns, Qrr = 1160 nC - Eliminates need for external anti-parallel diode in flyback, LLC, and bidirectional converters. |
| 100% avalanche tested | EAS = 450 mJ - Guarantees ruggedness under transient overvoltage and inductive switching stress without derating. |
| Low gate charge | Qg = 62.5 nC - Reduces driver power loss and enables use of cost-effective gate drivers in high-frequency SMPS. |
| Low input capacitance | Ciss = 2090 pF - Minimizes Miller effect, improving noise immunity and enabling stable operation above 200 kHz. |
| High dv/dt immunity | 45 V/ns - Prevents false turn-on in high-noise bridge configurations, especially with fast SiC/GaN gate drivers. |
Applications
| Industrial SMPS | Server PSU |
|---|---|
|
Use Scenario: 800 W active-clamp forward or phase-shifted full-bridge power supply in factory automation controllers. IC Role / Device Role / Timing Role: High-side primary switch handling 400 V DC bus, operating at 150–250 kHz with ZVS. Use Value: Low RDS(on) reduces conduction loss by 22% vs. comparable 650 V MOSFETs; fast diode enables reliable zero-voltage turn-on. |
Use Scenario: 1 kW redundant server power supply using interleaved LLC resonant topology. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional energy transfer and synchronous rectification timing. Use Value: 170 ns trr cuts reverse recovery loss by >35% versus standard superjunction MOSFETs, improving efficiency at 95%+. |
| Solar Microinverter | EV Onboard Charger |
|
Use Scenario: 300 W microinverter stage converting PV DC to grid-synchronized AC via H-bridge inversion. IC Role / Device Role / Timing Role: Bridge arm switch subjected to repetitive 600 V blocking and 20 A pulsed current with body diode conduction. Use Value: 100% avalanche rating ensures reliability during grid fault transients; low Qgd/Qgs ratio improves EMI performance. |
Use Scenario: 6.6 kW bidirectional OBC PFC + DC-DC stage operating in continuous conduction mode. IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC, conducting 23 A RMS with 100% duty-cycle body diode conduction in AC half-cycles. Use Value: Intrinsic diode with 1.6 V VSD at 23 A avoids discrete diode losses and layout complexity in space-constrained automotive modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R099C7XKSA1 | 650 V, 0.099 Ω, 30 A, TO-220; higher RDS(on) tempco, no intrinsic fast diode. | Requires external diode for bidirectional conduction; better suited for hard-switched PFC than ZVS converters. | Prefer when lower on-resistance outweighs diode recovery needs and board space allows TO-220 mounting. |
| STW28NM60ND | Same die, TO-247 package; Rthj-case = 0.66 °C/W, higher IDpulsed = 92 A, larger footprint. | Better thermal headroom for 1 kW+ designs; less suitable for dense SMT layouts due to through-hole mounting. | Choose when thermal budget exceeds D²PAK capability or mechanical retention requires screw-down mounting. |
Compared with IPP60R099C7XKSA1, STB28NM60ND trades 0.049 Ω higher RDS(on) for integrated diode recovery and superior dv/dt immunity-critical in resonant topologies. Versus STW28NM60ND, it offers identical electrical specs in a smaller, SMT-optimized package at the cost of reduced mechanical robustness and pulse current margin.
Availability
STB28NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for STB28NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
STB28NM60ND belongs to the FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial and telecom power conversion systems.
FAQ
What is the maximum continuous drain current for STB28NM60ND at case temperature 100 °C?
The maximum continuous drain current is 14.5 A when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal derating due to junction-to-case thermal resistance (0.66 °C/W) and maximum junction temperature limit of 150 °C.
Does STB28NM60ND require an external freewheeling diode in bridge configurations?
No. STB28NM60ND integrates an intrinsic fast-recovery body diode with trr = 170 ns and Qrr = 1160 nC, enabling reliable freewheeling and synchronous rectification without external diodes in half-bridge, full-bridge, and LLC topologies.
How does the D²PAK package affect thermal performance compared to TO-247?
The D²PAK (STB28NM60ND) and TO-247 (STW28NM60ND) share identical Rthj-case = 0.66 °C/W, but D²PAK relies on PCB copper area for heat spreading while TO-247 uses direct heatsink contact. D²PAK achieves comparable thermal performance only with ≥1 inch² 2 oz Cu pad per the datasheet's Rthj-pcb = 30 °C/W spec.
Is STB28NM60ND suitable for automotive applications?
No. STB28NM60ND is not qualified for automotive use per ST's documentation-it lacks AEC-Q101 qualification and is explicitly excluded from safety-critical, automotive, or aerospace applications in the datasheet's "Please Read Carefully" section.
STB28NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2090 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB28NM60ND FAQ
1.How can I place an order for STB28NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STB28NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB28NM60ND reliable?
The price and inventory of STB28NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB28NM60ND is usually 5 days.
3.What payment methods are accepted for STB28NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB28NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB28NM60ND?
STB28NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB28NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB28NM60ND?
For technical support, including STB28NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB28NM60ND requirements.
6.How does Aetrix verify that STB28NM60ND is sourced from the original manufacturer or authorized distributors?
All STB28NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB28NM60ND meets industry standards.
7.What is the process for return or replacement of STB28NM60ND?
All STB28NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB28NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB28NM60ND part is unused and in its original packaging.
Return procedure for STB28NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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