STMicroelectronics STB2N62K3

Overview

STB2N62K3 from STMicroelectronics is an N-channel 620 V, 2.9 Ω typ. (3.6 Ω max), 2.2 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, featuring built-in Zener-protected gate, 12 V/ns dv/dt capability, and 85 mJ single-pulse avalanche energy - deployed in high-voltage AC-DC flyback and PFC stages.

For engineers reviewing the STB2N62K3 datasheet, STB2N62K3 pinout, STB2N62K3 application, or STB2N62K3 equivalent, this device is evaluated for high-efficiency offline SMPS, hard-switched converters requiring robust diode recovery, and designs where low Coss (26 pF) and fast trr (200 ns @ Tj = 25 °C) reduce switching losses.

Technical Context

This MDmesh™ K3 MOSFET uses a vertically optimized silicon structure to achieve ultra-low RDS(on) while maintaining high voltage blocking. Its Zener-protected gate enables direct drive without external clamping, and its 100% avalanche-tested construction supports unclamped inductive switching.

The device delivers 2.2 A continuous drain current at TC = 25 °C with 2.78 °C/W junction-to-case thermal resistance in DPAK, and exhibits improved diode reverse recovery (Qrr = 0.9 µC, trr = 200 ns) versus prior MDmesh generations - critical for reducing EMI and body-diode conduction loss in quasi-resonant topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2) for thermal and electrical connection; compact surface-mount footprint suitable for automated assembly and high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP2N62K3, STB2N62K3 provides superior thermal performance per unit area (2.78 °C/W vs. 6.25 °C/W) and eliminates heatsink dependency in compact adapters; versus STD2N62K3, it shares identical silicon and DPAK footprint but differs in reel packaging and part marking - no electrical or reliability trade-offs.

Availability

STB2N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, and smart meter auxiliary supplies requiring stable component supply across extended product lifecycles.

Supply support for STB2N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STB2N62K3 belongs to the MDmesh™ K3 family - engineered specifically for high-efficiency, high-voltage switching in offline power conversion, emphasizing avalanche ruggedness, low gate charge, and fast body-diode recovery.

FAQ

What is the maximum gate-source voltage rating for STB2N62K3?

The STB2N62K3 features integrated back-to-back Zener diodes with a specified V(BR)GSO of ±30 V. This means the gate-source voltage must not exceed +30 V or fall below –30 V under any operating or transient condition. Exceeding this rating risks permanent gate oxide damage, even with short-duration spikes.

Can STB2N62K3 replace STP2N62K3 in an existing TO-220FP design?

No - STB2N62K3 uses a DPAK (TO-252) surface-mount package, while STP2N62K3 is in TO-220FP. They are not pin-compatible or drop-in replacements. PCB layout, thermal pad design, and reflow profile must be redesigned. Electrical parameters match, but mechanical integration requires full redesign.

Is STB2N62K3 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low Coss (26 pF), fast trr (200 ns), and high dv/dt immunity (12 V/ns) make it well-suited for ZVS and quasi-resonant flyback or LLC converters. The low output capacitance enables efficient resonant tank operation, and the robust body diode supports soft commutation without external Schottky assistance.

Does STB2N62K3 require a gate resistor for stability?

A gate resistor (typically 4.7–10 Ω) is recommended to dampen ringing caused by gate loop inductance and intrinsic gate resistance (RG = 5 Ω). While not strictly mandatory, omitting it risks oscillation during switching transitions, increased EMI, and potential gate overvoltage due to Ldi/dt effects - especially in high-frequency or high-noise environments.