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STMicroelectronics STB30N65DM6AG
- Part No.:
- STB30N65DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB30N65DM6AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 650 V
- Quantity:
- Payment:
- Shipping:
Inventory:878
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Product details
Overview
STB30N65DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V Power MOSFET in D²PAK package, featuring 102 mΩ typ. RDS(on), 28 A continuous drain current at TC = 25 °C, and fast-recovery body diode with 126 ns trr at 25 °C. It targets high-efficiency bridge topologies and ZVS phase-shift converters in automotive and industrial power supplies.
For engineers reviewing the STB30N65DM6AG datasheet, STB30N65DM6AG pinout, STB30N65DM6AG application, or STB30N65DM6AG equivalent, key selection criteria include avalanche ruggedness (600 mJ EAS), dv/dt immunity (100 V/ns), low Qg (46 nC), Coss,eq (339 pF), and Zener-protected gate.
Technical Context
This MDmesh DM6-series MOSFET integrates a fast-recovery body diode optimized for hard-switched and resonant topologies. Its low Qrr (0.63 µC typ.) and reduced trr (126 ns) minimize switching losses during commutation, while the 100 V/ns dv/dt ruggedness ensures robust operation under high-slew-rate conditions.
The device employs a superjunction structure delivering 115 mΩ max. RDS(on) at 650 V rating, with thermal resistance RthJC of 0.56 °C/W enabling high-power density designs. Gate drive requirements are eased by low input capacitance (2000 pF) and intrinsic gate resistance (1.6 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports DC bus voltages up to 400 V in full-bridge ZVS converters with margin |
| RDS(on) max | 115 mΩ - enables <2.5 W conduction loss at 28 A, reducing heatsink size |
| Qg | 46 nC - lowers gate drive power and allows use of smaller gate drivers |
| trr | 126 ns @ 25 °C - minimizes reverse recovery loss in synchronous rectification and LLC phases |
| EAS | 600 mJ - withstands unclamped inductive switching events without failure |
| dv/dt ruggedness | 100 V/ns - prevents spurious turn-on in high-noise motor drive and PFC stages |
| Coss,eq | 339 pF - reduces capacitive switching loss and improves efficiency in soft-switching applications |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; thermally enhanced layout compatible with standard 1-inch² FR-4 PCB with 2-oz copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | High-side power path / heat sink interface | Electrically connected to drain; primary thermal path to heatsink; requires isolation if mounted to chassis |
| Pin 1 (Gate) | Control input | Receives 10 V logic-level drive; Zener-protected against ±25 V transients |
| Pin 2 (Source) | Reference node / return path | Serves as local ground reference for gate drive; carries full load current in low-side configuration |
| Pin 3 (Drain) | Power output terminal | Internally bonded to tab; used only when tab isolation is required; not intended for primary current path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics per stress test requirements |
| Fast-recovery body diode | trr = 126 ns and Qrr = 0.63 µC enable efficient freewheeling in half-bridge motor drives |
| Low RDS(on) per area | 102 mΩ typ. at 650 V improves power density vs prior MDmesh generations |
| Zener-protected gate | Integrated gate oxide protection sustains ±25 V transient without external clamping |
| 100% avalanche tested | Each unit screened for single-pulse EAS ≥ 600 mJ at 100 °C junction temperature |
Applications
| Automotive On-Board Charger (OBC) | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: Bidirectional AC/DC conversion in 11 kW OBC modules using interleaved totem-pole PFC. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or phase-shifted full-bridge topology. Use Value: Low Qg and Coss,eq reduce gate drive loss and improve light-load efficiency above 97%. |
Use Scenario: 3.3 kW continuous boost converter operating at 100 kHz with 400 V DC output. IC Role / Device Role / Timing Role: Main switching element handling 28 A RMS current with ZVS capability. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during fast voltage transitions across line cycle zero-crossings. |
| Server PSU LLC Resonant Converter | EV Traction Inverter Auxiliary Supply |
|
Use Scenario: Primary-side switch in 2 kW LLC resonant half-bridge supplying 12 V/200 W auxiliary rail. IC Role / Device Role / Timing Role: Hard-switched node during startup and light load; soft-switched during normal operation. Use Value: Fast-recovery diode with 126 ns trr limits circulating current loss and enables reliable zero-voltage switching over full load range. |
Use Scenario: Isolated DC/DC converter powering gate drivers and MCU in 800 V traction inverter stacks. IC Role / Device Role / Timing Role: High-voltage input switch in flyback or forward converter operating at 250 kHz. Use Value: AEC-Q101 qualification and 150 °C max. TJ ensure reliability in under-hood ambient temperatures up to 125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R090CFD7XKSA1 | 90 mΩ RDS(on) max, 650 V, CoolMOS CFD7; higher Qg (62 nC), no AEC-Q101 rating | Preferred in non-automotive server PSUs where lower conduction loss outweighs gate drive overhead | Select when lowest RDS(on) is critical and automotive qualification is unnecessary |
| IXTH30N65X2 | 120 mΩ RDS(on) max, 650 V, HiPerFET X2; 100% avalanche rated but no fast-recovery diode spec | Suitable for snubberless flyback and hard-switched SMPS where diode recovery is managed externally | Choose when cost sensitivity dominates and integrated diode performance is secondary |
Compared with IPW65R090CFD7XKSA1 and IXTH30N65X2, STB30N65DM6AG uniquely balances AEC-Q101 compliance, fast diode recovery (126 ns), and Zener gate protection-making it optimal for automotive-grade ZVS converters where reliability under transient stress is non-negotiable.
Availability
STB30N65DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial PFC modules, and server LLC resonant converters requiring stable component supply across multi-year production cycles.
Supply support for STB30N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This part belongs to the MDmesh DM6 series-a family of high-voltage superjunction MOSFETs engineered specifically for high-efficiency, high-frequency switching in automotive and industrial power conversion systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB30N65DM6AG supports 18 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS13770 Rev 2. This derating reflects thermal limitations of the D²PAK package and must be applied in heatsink-limited designs operating above 25 °C ambient.
Does this MOSFET require external gate protection?
No external gate protection is required-the device integrates Zener clamping between gate and source, rated for ±25 V transient tolerance. This eliminates need for discrete TVS diodes in most automotive and industrial gate drive circuits, simplifying layout and improving reliability.
How does the body diode performance compare to standard MOSFETs?
Its body diode achieves 126 ns reverse recovery time and 0.63 µC Qrr at 25 °C-significantly faster than conventional 650 V MOSFETs (typically >250 ns trr). This enables efficient operation in hard-commutated topologies like totem-pole PFC without external SiC diodes.
Is the D²PAK package lead-free and RoHS compliant?
Yes, STB30N65DM6AG uses an ECOPACK2-compliant D²PAK package meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device is halogen-free and qualifies for lead-free reflow soldering per JEDEC J-STD-020D.3.
STB30N65DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM2
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 115mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 223W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB30N65DM6AG FAQ
1.How can I place an order for STB30N65DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STB30N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB30N65DM6AG reliable?
The price and inventory of STB30N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30N65DM6AG is usually 5 days.
3.What payment methods are accepted for STB30N65DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30N65DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB30N65DM6AG?
STB30N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB30N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB30N65DM6AG?
For technical support, including STB30N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30N65DM6AG requirements.
6.How does Aetrix verify that STB30N65DM6AG is sourced from the original manufacturer or authorized distributors?
All STB30N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30N65DM6AG meets industry standards.
7.What is the process for return or replacement of STB30N65DM6AG?
All STB30N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STB30N65DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB30N65DM6AG part is unused and in its original packaging.
Return procedure for STB30N65DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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