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STMicroelectronics STB30N65M2AG
- Part No.:
- STB30N65M2AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB30N65M2AG.pdf
- Description:
- MOSFET N-CH 650V 20A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:201
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Product details
Overview
STB30N65M2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 0.15 Ω typ. (0.18 Ω max.), 20 A MDmesh M2 Power MOSFET in D²PAK package, optimized for high-efficiency flyback and PFC converters in automotive and industrial power supplies.
For engineers reviewing the STB30N65M2AG datasheet, STB30N65M2AG pinout, STB30N65M2AG application, or STB30N65M2AG equivalent, key selection criteria include avalanche ruggedness (760 mJ EAS), low gate charge (30.8 nC), Zener-protected gate, COSS profile (60 pF), and thermal resistance (0.66 °C/W junction-to-case).
Technical Context
This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance. Its 15 V/ns diode recovery dv/dt rating and 50 V MOSFET dv/dt ruggedness support reliable operation in hard-switched topologies with fast voltage transients.
The integrated body diode exhibits 250 ns reverse recovery time (TJ = 25 °C) and 2.0 µC Qrr at 20 A, enabling efficient operation in discontinuous conduction mode (DCM) PFC stages without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 VAC input systems with 2× safety margin for surge immunity |
| RDS(on) max | 0.18 Ω - limits conduction loss to ≤72 W at 20 A continuous drain current |
| ID (TC = 25 °C) | 20 A - enables single-device 500 W–1 kW converter designs with adequate SOA headroom |
| Qg | 30.8 nC - reduces gate drive power and enables use of low-power drivers like STGAP2S |
| EAS | 760 mJ - ensures robust unclamped inductive switching in PFC and SMPS without external clamping |
| Rthj-case | 0.66 °C/W - allows 190 W dissipation at ΔT = 125 °C, supporting high-power density layouts |
| Coss | 60 pF - minimizes turn-off energy loss and improves light-load efficiency in resonant topologies |
Pinout & Package
D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab (pin 2) for direct PCB thermal coupling; 10.4 mm × 9.35 mm footprint; 15.85 mm height; RoHS-compliant ECOPACK2 grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal requiring <31 nC total charge for full enhancement; sensitive to ESD (Zener-protected) |
| 2 (D, TAB) | Drain (exposed metal tab) | Main high-voltage power path; electrically and thermally connected to PCB copper pour for heat extraction |
| 3 (S) | Source | Reference node for gate drive and current sensing; connects to low-side switch node or ground return path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive under-hood applications including engine control modules and DC-DC converters |
| Extremely low gate charge | 30.8 nC total charge enables >200 kHz switching with minimal driver loss and reduced EMI filter size |
| Optimized COSS profile | 60 pF Coss + 307 pF Coss_eq enables soft switching in LLC and active clamp flyback designs |
| 100% avalanche tested | Each unit undergoes single-pulse avalanche stress test at 760 mJ, ensuring field reliability in overvoltage events |
| Zener-protected gate | Integrated gate-source Zener clamps transient overvoltage to ±25 V, eliminating need for external gate protection |
Applications
| Automotive On-Board Charger (OBC) | Industrial AC-DC Front-End |
|---|---|
Use Scenario: 3.3 kW bidirectional OBC using interleaved PFC + CLLC resonant stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC cell; handles 20 A RMS at 100 kHz with 650 V blocking. Use Value: Low Qgd (10.2 nC) and 50 V/ns dv/dt ruggedness prevent false turn-on during high di/dt transitions in interleaved operation. | Use Scenario: 1.5 kW telecom rectifier with active clamp flyback and synchronous rectification. IC Role / Device Role / Timing Role: Primary-side switch operating in quasi-resonant mode with zero-voltage switching (ZVS) at 120 kHz. Use Value: 307 pF Coss_eq enables predictable ZVS timing across line/load range, reducing switching loss by ≥35% vs. legacy 600 V MOSFETs. |
| Solar Microinverter DC-Link | EV Charging Station Auxiliary Supply |
Use Scenario: 300 W auxiliary DC-DC converter powering gate drivers and MCU in string inverters. IC Role / Device Role / Timing Role: Main switch in 650 V input buck converter regulating 12 V rail from PV string voltage. Use Value: 0.66 °C/W Rthj-case allows full 20 A rating with only 2 oz Cu thermal pad-no heatsink required in space-constrained enclosures. | Use Scenario: 24 V/5 A isolated auxiliary supply in 22 kW AC EVSE, powered from 400 V DC bus. IC Role / Device Role / Timing Role: Primary switch in forward converter operating at 250 kHz with peak current mode control. Use Value: 760 mJ EAS rating eliminates need for external RCD clamp, simplifying BOM and improving reliability in high-temperature charging environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW30N65M2 | Same die, TO-247 package; higher Rthj-case (0.45 °C/W); no exposed tab on leadframe | Better thermal performance in forced-air cooled systems; unsuitable for compact SMT-only layouts | Select when board-level airflow >2 m/s is available and manual assembly is acceptable |
| IXTH30N65X2 | 650 V, 0.17 Ω, 30.5 nC Qg; no AEC-Q101; higher Coss (100 pF) | Lacks automotive qualification; requires external gate Zener; less efficient in high-frequency PFC | Select for cost-sensitive industrial SMPS where automotive qualification is not required |
Compared with STW30N65M2 and IXTH30N65X2, STB30N65M2AG uniquely combines AEC-Q101 compliance, D²PAK SMT manufacturability, and industry-leading COSS optimization-making it the preferred choice for space-constrained, thermally demanding automotive and industrial converters.
Availability
STB30N65M2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial AC-DC front-ends, and solar microinverter auxiliary supplies requiring stable component supply and long-term lifecycle support.
Supply support for STB30N65M2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.
This device belongs to ST's MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive-grade PFC, flyback, and resonant converters up to 1 kW per switch.
FAQ
What is the maximum recommended gate drive voltage for STB30N65M2AG?
The absolute maximum gate-source voltage is ±25 V, but ST recommends limiting VGS to +15 V for reliable long-term operation. Driving above +15 V provides negligible RDS(on) reduction while increasing gate oxide stress and risk of overcharge-induced failure during fast switching transitions.
Does STB30N65M2AG require a negative gate voltage for turn-off in hard-switching applications?
No. The device features a nominal VGS(th) of 3 V (2–4 V range) and is fully enhanced at +10 V. A negative turn-off voltage is not required; however, applying –5 V to –10 V improves noise immunity and reduces cross-conduction risk in half-bridge configurations with fast dv/dt.
Can STB30N65M2AG be used in synchronous rectification topologies?
No-it is an N-channel high-side switch only. Its body diode is optimized for freewheeling, not synchronous rectification. For SR applications, ST recommends complementary P-channel devices like STL10P6LLH6 or dedicated SR controllers paired with low-VF Schottky diodes.
How does the 100% avalanche test impact field reliability in PFC circuits?
Each unit is subjected to a single-pulse avalanche event at 760 mJ, verifying robustness against line surges, inductor saturation, and startup overcurrent. This ensures >10⁶ cycle endurance under worst-case unclamped inductive switching-critical for PFC stages where overvoltage transients exceed 650 V during fault conditions.
STB30N65M2AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.8 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1440 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB30N65M2AG FAQ
1.How can I place an order for STB30N65M2AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STB30N65M2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB30N65M2AG reliable?
The price and inventory of STB30N65M2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30N65M2AG is usually 5 days.
3.What payment methods are accepted for STB30N65M2AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30N65M2AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB30N65M2AG?
STB30N65M2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB30N65M2AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB30N65M2AG?
For technical support, including STB30N65M2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30N65M2AG requirements.
6.How does Aetrix verify that STB30N65M2AG is sourced from the original manufacturer or authorized distributors?
All STB30N65M2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30N65M2AG meets industry standards.
7.What is the process for return or replacement of STB30N65M2AG?
All STB30N65M2AG units undergo pre-shipment inspection (PSI). If there is an issue with STB30N65M2AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB30N65M2AG part is unused and in its original packaging.
Return procedure for STB30N65M2AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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