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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB30N65M5

Name: STB30N65M5
Brand: STMicroelectronics
SKU: STB30N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB30N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB30N65M5.pdf

Description:: MOSFET N-CH 650V 22A D2PAK

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Product details

Overview

STB30N65M5 from STMicroelectronics is an N-channel 650 V, 22 A Power MOSFET based on MDmesh M5 vertical process technology in D²PAK (TO-263) package, featuring 125 mΩ typ. R_DS(on), 15 V/ns dv/dt capability, and 100% avalanche tested for ruggedness - deployed in high-efficiency PFC stages of industrial SMPS.

For engineers reviewing the STB30N65M5 datasheet, STB30N65M5 pinout, STB30N65M5 application, or STB30N65M5 equivalent, key selection criteria include its 650 V V_DS, low gate charge (64 nC), fast switching (50 ns t_d(off)), and integrated body diode with 336 ns t_rr at 22 A.

Technical Context

This MOSFET employs ST's MDmesh M5 process to achieve ultra-low R_DS(on) while maintaining high voltage blocking and robust dv/dt immunity. Its vertical structure enables optimized charge distribution and reduced output capacitance energy (E_oss = 6 µJ at 500 V).

The device integrates a fast-recovery body diode (Q_rr = 6 µC, t_rr = 336 ns) and supports unclamped inductive switching up to 7 A repetitive avalanche current. Thermal resistance R_thJC is 0.83 °C/W, enabling high-power operation with minimal heatsink burden.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Enables use in 400 V AC input PFC and 380 V DC bus systems without derating.
R_DS(on) max	139 mΩ - Delivers <1.5 W conduction loss at 11 A, critical for >98% efficiency targets.
I_D (T_C = 25 °C)	22 A - Supports continuous operation in 500–1000 W power supplies with forced-air cooling.
Q_g	64 nC - Enables efficient gate drive with standard 1–2 A peak drivers and low E_on/E_off.
t_r, t_f	8 ns / 10 ns - Minimizes switching transition losses in hard-switched topologies above 100 kHz.
E_AS	500 mJ - Ensures reliable operation under transient overloads and inductive turn-off stress.
dv/dt rating	15 V/ns - Suppresses false turn-on in high-noise bridge-leg configurations without snubbers.

Pinout & Package

STB30N65M5 is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant per ECOPACK2 specifications.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically and thermally connected to PCB copper pour; primary heat path and high-side switching node.
G (Pin 1)	Gate	High-impedance control terminal requiring <64 nC charge; sensitive to ESD and layout-induced ringing.
S (Pin 3)	Source	Reference node for gate drive; must be low-inductance path to minimize V_GS instability during switching.

Key Features

Feature	Design Value
MDmesh M5 process	Vertical superjunction architecture delivering 125 mΩ typ. R_DS(on) at 650 V - 20% lower than prior-generation M2 devices.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 500 mJ and repetitive I_AR ≥ 7 A - eliminates need for external clamping in flyback/PFC designs.
Low Q_gd/Q_gs ratio	25 nC / 16 nC = 1.56 - improves Miller immunity and enables stable operation with moderate gate resistors (4.7 Ω typical).
Optimized body diode	t_rr = 336 ns, Q_rr = 6 µC at 22 A - reduces recovery loss and EMI in totem-pole PFC compared to standard silicon diodes.
ECOPACK2 compliance	Halogen-free, lead-free, and RoHS-compliant packaging - meets industrial and energy-efficient appliance regulatory requirements.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectification

Use Scenario: Active clamp forward and interleaved PFC stages in 1 kW telecom rectifiers.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC link with 100–200 kHz switching frequency.

Use Value: 139 mΩ R_DS(on) and 64 nC Q_g enable >97.5% system efficiency while reducing gate driver thermal load.

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified server PSUs.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in LLC resonant half-bridge with synchronous rectification.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during high dV/dt transitions across transformer windings.

EV Onboard Charger (OBC) PFC

Solar Microinverters

Use Scenario: Boost PFC stage in bi-directional OBCs converting 350–800 V DC battery to grid-synchronized AC.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch operating in CCM with soft-start sequencing.

Use Value: 500 mJ E_AS withstands regenerative energy surges during AC line dropouts without failure.

Use Scenario: DC-DC boost stage in string-level microinverters interfacing 60–150 V PV arrays.

IC Role / Device Role / Timing Role: High-efficiency switching transistor in hard-switched boost converter running at 120 kHz.

Use Value: Low C_oss (68 pF) and E_oss (6 µJ) minimize capacitive switching loss and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30N65M5	Same die, TO-220 through-hole package; R_thJC = 0.83 °C/W but higher R_thJA (62.5 °C/W vs 30 °C/W for D²PAK on FR-4).	Better suited for prototyping and low-volume industrial controls where manual assembly is preferred.	Select when mechanical mounting constraints or thermal interface limitations favor through-hole over SMT.
IPW65R090CFD7	Infineon CoolMOS CFD7: 90 mΩ @ 650 V, 70 nC Q_g, 1000 V avalanche rating, but higher cost and no integrated diode optimization.	Preferred in ultra-high-efficiency (>99%) datacenter PSUs where conduction loss dominates.	Choose only if R_DS(on) reduction justifies 35% BOM cost increase and layout rework for different footprint.

Compared with STP30N65M5, STB30N65M5 offers superior thermal performance in automated SMT production; versus IPW65R090CFD7, it delivers better cost-per-watt and optimized body diode behavior for PFC, despite higher R_DS(on).

Availability

STB30N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, EV onboard chargers, solar microinverters, and telecom rectification requiring stable component supply and long-term manufacturing continuity.

Supply support for STB30N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STB30N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage AC-DC conversion in energy-critical infrastructure where reliability, thermal performance, and avalanche ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB30N65M5 supports 13 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6070 Rev 4. This derating reflects junction-to-case thermal limits and ensures safe operation within the SOA curve up to 10 ms pulses at full 22 A.

Does STB30N65M5 have a fully rated body diode for synchronous rectification?

No - the integrated body diode is optimized for PFC freewheeling and clamping, not synchronous rectification. Its reverse recovery time (336 ns) and Q_rr (6 µC) are significantly higher than dedicated SiC Schottky diodes; use external diodes or synchronous MOSFETs for secondary-side rectification.

Can STB30N65M5 replace STB20N65M5 in existing designs?

Yes, with validation: STB30N65M5 offers 30% lower R_DS(on) (139 mΩ vs 185 mΩ) and identical pinout/package. Gate drive requirements remain compatible, but layout must verify reduced switching loss doesn't induce new EMI peaks due to faster edge rates.

Is the D²PAK package lead-free and RoHS-compliant?

Yes - STB30N65M5 is manufactured in ECOPACK2-compliant D²PAK packaging, meeting RoHS Directive 2011/65/EU and being halogen-free per IEC 61249-2-21. Full compliance documentation is available via ST's quality portal using order code STB30N65M5.

STB30N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 139mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2880 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB30N65M5 FAQ

1.How can I place an order for STB30N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB30N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB30N65M5 reliable?

The price and inventory of STB30N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30N65M5 is usually 5 days.

3.What payment methods are accepted for STB30N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB30N65M5?

STB30N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB30N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB30N65M5?

For technical support, including STB30N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30N65M5 requirements.

6.How does Aetrix verify that STB30N65M5 is sourced from the original manufacturer or authorized distributors?

All STB30N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30N65M5 meets industry standards.

7.What is the process for return or replacement of STB30N65M5?

All STB30N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB30N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB30N65M5 part is unused and in its original packaging.

Return procedure for STB30N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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