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STMicroelectronics STB30NF10T4
- Part No.:
- STB30NF10T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB30NF10T4.pdf
- Description:
- MOSFET N-CH 100V 35A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,027
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Product details
Overview
STB30NF10T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 100 V drain-source voltage, 35 A continuous drain current at TC = 25°C, and 0.038 Ω typical RDS(on) at VGS = 10 V. It features low gate charge (40 nC), high dv/dt immunity (28 V/ns), and 100% avalanche tested ruggedness-designed for high-efficiency DC-DC converters and motor control half-bridges.
For engineers reviewing the STB30NF10T4 datasheet, STB30NF10T4 pinout, STB30NF10T4 application, or STB30NF10T4 equivalent, key selection criteria include its D2PAK thermal performance (Rthj-case = 1.30 °C/W), unclamped inductive switching capability (EAS = 275 mJ), and gate threshold voltage range (2–4 V) under varying junction temperature.
Technical Context
This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance while maintaining robust safe operating area (SOA) across pulse widths. Its optimized capacitance profile (Ciss = 1180 pF, Crss = 80 pF) supports fast switching with controlled EMI in hard-switched topologies.
The device integrates a fast-recovery body diode (trr = 110 ns, Qrr = 390 nC) with low forward voltage (VSD = 1.3 V at ISD = 30 A), making it suitable for synchronous rectification and freewheeling paths where reverse recovery loss must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in high-side switch or buck converter high-side position |
| RDS(on) | 0.038 Ω (typ) at VGS = 10 V - Enables ≤1.3 W conduction loss at 18 A DC load current |
| ID (cont) | 35 A at TC = 25°C - Supports high-current motor drive phases with external heatsink |
| Qg | 40 nC - Reduces gate driver power requirement and switching transition time in 100 kHz+ SMPS |
| EAS | 275 mJ - Withstands unclamped inductive energy without failure in relay/snubberless designs |
| dv/dt | 28 V/ns - Resists false turn-on in noisy industrial environments with fast voltage transients |
| tr/tf | 40 ns / 10 ns - Enables clean edge control in Class-D amplifiers and digital power stages |
Pinout & Package
D2PAK (TO-263) package: surface-mount, isolated heatsink tab (Drain-connected), 3-pin configuration with standard footprint for automated assembly and thermal vias.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control terminal | Receives 10 V logic-level drive; requires <1 µs rise time to minimize overlap loss |
| 2 (DRAIN) | High-side power node | Internally connected to heatsink tab; must be electrically isolated from PCB ground plane |
| 3 (SOURCE) | Reference node / return path | Serves as local ground reference for gate driver; routed with low-inductance trace to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Enables 0.038 Ω RDS(on) in D2PAK without compromising SOA or avalanche ruggedness |
| 100% avalanche tested | Guarantees single-pulse EAS ≥275 mJ at Tj = 25°C, eliminating need for external snubbers |
| Low Qgd/Qg ratio | 15/40 nC = 0.375 - Improves Miller immunity and reduces risk of shoot-through in bridge configurations |
| ECOPACK® compliant | Lead-free second-level interconnect per JEDEC JESD97; RoHS and REACH compliant for global deployment |
| High dv/dt immunity | 28 V/ns rating validated per JEDEC JESD22-A114 - prevents spurious turn-on during bus transients |
Applications
| Brushless DC Motor Drive | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Half-bridge phase leg in 24–48 V BLDC inverters for HVAC blowers and pump controllers. IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronized PWM gating at 20–50 kHz. Use Value: Low RDS(on) and fast tf reduce conduction + switching losses by 18% vs. legacy TO-220 equivalents in 30 A peak loads. |
Use Scenario: Primary-side switch in isolated 300 W flyback or forward converter for PLC power supplies. IC Role / Device Role / Timing Role: Main power switch handling 100 V input transients and 35 A surge currents during startup. Use Value: 275 mJ EAS withstands reflected output inductance spikes without clamping circuitry. |
| LED Constant-Current Driver | Automotive Body Control Module |
|
Use Scenario: High-side dimming switch controlling 12 V, 10 A LED arrays in architectural lighting systems. IC Role / Device Role / Timing Role: PWM-controlled current regulator with 100 Hz–2 kHz duty-cycle modulation. Use Value: 1.3 V body diode VSD minimizes reverse recovery loss during PWM off-time freewheeling. |
Use Scenario: Load switch for 12 V accessory circuits (e.g., window lift, seat heater) in BCM modules. IC Role / Device Role / Timing Role: Protected high-side power distribution switch with integrated overcurrent and thermal shutdown. Use Value: D2PAK Rthj-case = 1.30 °C/W enables full 35 A rating with minimal heatsink in space-constrained modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF10 | Same die, TO-220 package; Rthj-case = 5.0 °C/W vs. 1.30 °C/W | Limited to ≤18 A continuous due to higher thermal resistance; unsuitable for SMT-only lines | Select when through-hole assembly is required and board-level heatsinking is feasible |
| IRF540N | RDS(on) = 0.044 Ω (typ), Qg = 71 nC, no avalanche rating specified | Lacks guaranteed EAS and dv/dt immunity; requires external clamping in inductive loads | Acceptable only in cost-sensitive, non-critical linear or low-frequency switching roles |
Compared with STP30NF10 and IRF540N, STB30NF10T4 delivers superior thermal performance in surface-mount layouts, verified avalanche robustness for reliability-critical power stages, and lower gate drive loss-making it optimal for compact, high-reliability DC-DC and motor control designs.
Availability
STB30NF10T4 is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and tape-and-reel delivery for SMT production.
Supply support for STB30NF10T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STB30NF10T4 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control systems where thermal density and ruggedness are critical.
FAQ
What is the maximum recommended gate drive voltage for STB30NF10T4?
The absolute maximum gate-source voltage is ±20 V, but ST recommends operation between 10 V and 15 V for optimal RDS(on) and safe margin against gate oxide stress. Driving below 4.5 V risks incomplete turn-on and excessive conduction loss; above 15 V yields diminishing RDS(on) improvement while increasing gate leakage and ESD sensitivity.
Can STB30NF10T4 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (confirmed in Figure 12) ensures inherent current sharing stability. Parallel operation requires matched layout symmetry, individual gate resistors (≤10 Ω), and shared source inductance minimization. Derate total current by 15% for thermal imbalance in multi-device arrays.
Does STB30NF10T4 have built-in ESD protection?
No. The device lacks integrated gate protection diodes and has only 100 nA |IGSS| at ±20 V-indicating no internal clamp. External 12 V Zener diode (e.g., P6KE12A) between gate and source is mandatory for board-level ESD immunity per IEC 61000-4-2 Level 4 requirements.
What is the safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the continuous drain current is derated to 25 A (per Table 1), and the SOA boundary shifts leftward-pulse operation beyond 100 µs requires VDS ≤40 V at 25 A. For 100 V operation, pulse width must remain ≤10 µs to stay within the SOA curve shown in Figure 1.
STB30NF10T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 115W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB30NF10T4 FAQ
1.How can I place an order for STB30NF10T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB30NF10T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB30NF10T4 reliable?
The price and inventory of STB30NF10T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30NF10T4 is usually 5 days.
3.What payment methods are accepted for STB30NF10T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30NF10T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB30NF10T4?
STB30NF10T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB30NF10T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB30NF10T4?
For technical support, including STB30NF10T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30NF10T4 requirements.
6.How does Aetrix verify that STB30NF10T4 is sourced from the original manufacturer or authorized distributors?
All STB30NF10T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30NF10T4 meets industry standards.
7.What is the process for return or replacement of STB30NF10T4?
All STB30NF10T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB30NF10T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB30NF10T4 part is unused and in its original packaging.
Return procedure for STB30NF10T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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