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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB30NF20

Name: STB30NF20
Brand: STMicroelectronics
SKU: STB30NF20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB30NF20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB30NF20.pdf

Description:: MOSFET N-CH 200V 30A D2PAK

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Product details

Overview

STB30NF20 from STMicroelectronics is an N-channel 200V, 30A, 0.075Ω D²PAK Power MOSFET optimized for high-efficiency isolated DC-DC converters. It features low gate charge (38 nC), 100% avalanche tested ruggedness, and a figure of merit (R_DS(on) × Q_g) of 2.85 Ω·nC. Its 125W power dissipation and 1°C/W junction-to-case thermal resistance support robust primary-side switching in telecom and industrial SMPS.

For engineers reviewing the STB30NF20 datasheet, STB30NF20 pinout, STB30NF20 application, or STB30NF20 equivalent, key selection criteria include its 200V V_DSS, 0.075Ω R_DS(on) at 10V V_GS, 38 nC total gate charge, 155 ns reverse recovery time at 25°C, and D²PAK package thermal performance for high-current switching.

Technical Context

This STripFET™ II device uses a planar vertical structure with minimized input capacitance (C_iss = 1597 pF) and low Crss (43 pF) to reduce switching losses and EMI in hard-switched topologies. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10V gate drivers.

The integrated source-drain diode supports synchronous rectification and flyback operation, with 1.5 V forward voltage at 30A and controlled reverse recovery (Q_rr = 0.96 µC at 25°C). Avalanche energy rating (140 mJ) enables unclamped inductive load handling without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands up to 200V drain-source blocking voltage in off-state, suitable for 48V/54V bus-derived 200V-class converters.
R_DS(on)	0.075 Ω - Measured at V_GS = 10V, ID = 15A; determines conduction loss (P_cond ≈ 17 W at 30A DC).
Q_g	38 nC - Total gate charge required for full turn-on; defines driver strength requirement and switching speed trade-off.
I_D (T_C=25°C)	30 A - Continuous drain current rating at case temperature 25°C; derates to 19A at 100°C case.
E_AS	140 mJ - Single-pulse avalanche energy at T_j = 25°C; enables robustness against inductive switching transients.
R_thJC	1 °C/W - Junction-to-case thermal resistance; allows direct heatsink mounting for high-power density designs.
t_rr	155 ns - Reverse recovery time at ISD = 30A, di/dt = 100A/µs; impacts diode commutation loss and ringing in flyback/flybuck topologies.

Pinout & Package

STB30NF20 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad on the bottom provides low-inductance, high-current path and thermal conduction to the PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts 10V logic-level drive; low input capacitance (C_iss = 1597 pF) reduces driver loading.
2 (Drain)	High-side power node	Internally connected to large copper pad; serves as primary heat sink interface and high-current output path.
3 (Source)	Reference node / return path	Common reference for gate drive and current sensing; low-inductance layout critical for dV/dt immunity.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	2.85 Ω·nC - Optimized conduction/switching loss balance for >90% efficiency in 100–500 kHz DC-DC stages.
100% avalanche tested	Guarantees minimum 140 mJ single-pulse energy survival - eliminates need for external clamping in flyback snubber design.
Low intrinsic capacitances	C_oss = 320 pF, C_rss = 43 pF - Reduces capacitive switching loss and improves dv/dt immunity in high-frequency operation.
ECOPACK® compliant	Lead-free second-level interconnect with JEDEC JESD97 marking - meets RoHS and industrial environmental compliance requirements.
Enhanced manufacturability	High process repeatability ensures consistent R_DS(on) and V_GS(th) across lots - simplifies thermal margining and production binning.

Applications

Telecom DC-DC Converters

Industrial SMPS Primary Switch

Use Scenario: 48V input to 12V/30A isolated forward converter in base station power supplies.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300 kHz with synchronous rectification feedback.

Use Value: Low Q_g and R_DS(on) enable >93% peak efficiency; avalanche rating handles transformer leakage spikes without snubber loss.

Use Scenario: 380V PFC front-end followed by 200V intermediate bus feeding 24V/20A output in factory automation PLC power modules.

IC Role / Device Role / Timing Role: Main switch in half-bridge LLC resonant stage, driven by isolated gate driver with 10V supply.

Use Value: D²PAK thermal performance (R_thJC = 1°C/W) sustains 30A continuous current with minimal heatsink; low C_rss suppresses cross-conduction risk.

Server VRM High-Side Switch

Renewable Energy Inverter Stage

Use Scenario: 12V input to 1.2V/150A multiphase buck converter in AI accelerator server VRMs.

IC Role / Device Role / Timing Role: High-side FET in interleaved phase leg, switched at 500 kHz with adaptive dead-time control.

Use Value: Fast turn-on (t_d(on) = 35 ns) and low Q_gd/Q_gs ratio improve duty-cycle fidelity and reduce shoot-through risk.

Use Scenario: 600V DC link switching in string-level microinverter for residential solar panels.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge inverter stage, commutating 30A RMS sinusoidal current at 50/60 Hz with PWM modulation.

Use Value: Robust body diode (t_rr = 155 ns, Q_rr = 0.96 µC) minimizes reverse recovery loss during zero-crossing transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPbF	R_DS(on) = 0.18Ω (higher), Q_g = 67 nC (higher), TO-220 package	Larger R_DS(on) increases conduction loss by ~140%; lacks avalanche rating and D²PAK thermal advantage	Prefer only if legacy TO-220 footprint and lower cost outweigh efficiency and reliability needs.
IXTH30N20P	R_DS(on) = 0.07Ω (slightly lower), Q_g = 42 nC (slightly higher), TO-247 package	Higher gate charge increases driver loss; TO-247 requires through-hole assembly and larger board area than D²PAK	Choose when higher peak current (IDM = 120A) and improved heatsinking via screw-mount are prioritized over SMT density.

Compared with IRF640NPbF and IXTH30N20P, STB30NF20 delivers superior R_DS(on) × Q_g figure of merit (2.85 vs 12.06 and 2.94 Ω·nC), best-in-class avalanche ruggedness, and optimal thermal performance per unit PCB area due to its D²PAK footprint and 1°C/W R_thJC.

Availability

STB30NF20 is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS primary switches, and server VRM high-side switching requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for STB30NF20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STB30NF20 belongs to the STripFET™ II Power MOSFET product line, engineered specifically to minimize gate charge and input capacitance for high-frequency, high-efficiency switching power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB30NF20 supports 19A continuous drain current when the case temperature reaches 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and must be verified using actual PCB copper area and airflow conditions in the final layout.

Is STB30NF20 suitable for use with 5V gate drive?

No - STB30NF20 has a gate threshold voltage range of 2–4V but requires 10V V_GS to achieve its rated 0.075Ω R_DS(on). At 5V, R_DS(on) rises significantly (typical >0.15Ω), increasing conduction loss and thermal stress; a 10V gate driver is mandatory for full performance.

Does STB30NF20 have a built-in body diode, and what are its recovery characteristics?

Yes - it integrates a fast-recovery source-drain diode with 1.5V forward voltage at 30A and 155ns reverse recovery time at 25°C. Its Q_rr is 0.96µC under standard test conditions, enabling efficient operation in flyback and resonant topologies without external diode replacement.

Can STB30NF20 replace STP30NF20 in existing TO-220 designs?

No - STB30NF20 uses a surface-mount D²PAK package while STP30NF20 uses through-hole TO-220. They share identical electrical specs but differ mechanically; replacement requires PCB redesign, reflow profile adjustment, and thermal validation due to different R_thJA (62.5°C/W vs ~55°C/W for D²PAK on 1-in² 2oz Cu).

STB30NF20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1597 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB30NF20 FAQ

1.How can I place an order for STB30NF20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB30NF20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB30NF20 reliable?

The price and inventory of STB30NF20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30NF20 is usually 5 days.

3.What payment methods are accepted for STB30NF20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30NF20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB30NF20?

STB30NF20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB30NF20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB30NF20?

For technical support, including STB30NF20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30NF20 requirements.

6.How does Aetrix verify that STB30NF20 is sourced from the original manufacturer or authorized distributors?

All STB30NF20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30NF20 meets industry standards.

7.What is the process for return or replacement of STB30NF20?

All STB30NF20 units undergo pre-shipment inspection (PSI). If there is an issue with STB30NF20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB30NF20 part is unused and in its original packaging.

Return procedure for STB30NF20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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