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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB30NM50N

Name: STB30NM50N
Brand: STMicroelectronics
SKU: STB30NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB30NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB30NM50N.pdf

Description:: MOSFET N-CH 500V 27A D2PAK

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Product details

Overview

STB30NM50N from STMicroelectronics is an N-channel 500 V, 27 A, 0.090 Ω R_DS(on) MDmesh™ II Power MOSFET in D²PAK package, designed for high-efficiency switching converters operating at high voltage and moderate current. It features 100% avalanche tested ruggedness, low gate charge (94 nC), and low input capacitance (2740 pF), enabling fast switching in SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB30NM50N datasheet, STB30NM50N pinout, STB30NM50N application, or STB30NM50N equivalent, key selection criteria include its 500 V V_DSS, 0.090 Ω R_DS(on) at V_GS = 10 V, 94 nC total gate charge, 150 °C max junction temperature, and D²PAK thermal resistance of 0.66 °C/W (j-case).

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, delivering ultra-low on-resistance and gate charge simultaneously. Its optimized cell structure reduces both conduction and switching losses, making it suitable for hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits 480 ns reverse recovery time (T_j = 25 °C) and 8 µC Q_rr, supporting moderate-frequency synchronous rectification and flyback snubberless operation. Avalanche capability is rated at 12 A repetitive I_AR and 900 mJ single-pulse E_AS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports DC bus voltages up to 400 V nominal with 25% margin in offline SMPS
R_DS(on) max	0.115 Ω - ensures <1.5 W conduction loss at 27 A continuous drain current
I_D (T_C = 25 °C)	27 A - enables high-power density designs without forced air cooling
Q_g	94 nC - allows efficient gate drive with standard 1–2 A peak drivers at 100–300 kHz
C_iss	2740 pF - contributes to predictable Miller plateau timing and EMI control
T_j max	150 °C - permits operation in sealed enclosures with ambient up to 85 °C under derated load
R_thj-case	0.66 °C/W - enables >150 W power dissipation with a modest heatsink (e.g., 1.5 K/W)

Pinout & Package

D²PAK (TO-263) package: surface-mount, 3-pin, exposed drain pad for thermal and electrical connection. Standard JEDEC MO-211AC outline with 2.54 mm lead pitch and 10.0 × 15.85 mm footprint.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance source connection; ties directly to PCB ground plane or source trace
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing
Pin 3 (Drain)	Main high-voltage power terminal	Internally connected to exposed copper pad - must be soldered to large copper area for thermal and current handling

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching events up to 12 A/900 mJ
Low gate charge (94 nC)	Reduces driver power loss and enables higher frequency operation without excessive gate drive loss
Low R_DS(on) / Q_g ratio	Optimizes trade-off between conduction and switching losses in hard-switched converters
MDmesh™ II superjunction structure	Delivers 0.090 Ω R_DS(on) at 500 V - ~30% lower than first-gen superjunction MOSFETs
ECOPACK® RoHS-compliant packaging	Lead-free second-level interconnect with JEDEC JESD97 marking for environmental compliance

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1 kW+ server power supply operating in continuous conduction mode (CCM) with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Main switching transistor in LLC resonant half-bridge primary side, switching at 200–300 kHz.

Use Value: 0.090 Ω R_DS(on) minimizes conduction loss at full load; 94 nC Q_g enables clean turn-on with minimal gate drive loss.

Use Scenario: Active boost PFC front-end for factory automation drives accepting universal AC input (85–265 V_AC).

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in critical conduction mode (CrM) or transition mode (TM) at 30–80 kHz.

Use Value: Low C_iss (2740 pF) and fast trr (480 ns) reduce switching loss and improve light-load efficiency.

Solar Microinverter DC-DC Stage

EV Onboard Charger HV Isolation Stage

Use Scenario: Interleaved DC-DC stage stepping up PV panel output (30–60 V) to 350–400 V DC link for H-bridge inversion.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, switching at 100–200 kHz.

Use Value: 150 °C T_j rating and 0.66 °C/W R_thj-case support compact heatsinking in thermally constrained microinverter enclosures.

Use Scenario: Isolated DC-DC converter in 6.6 kW OBC converting 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge or active clamp forward topology.

Use Value: 500 V V_DSS provides margin over 400 V nominal battery with transients; avalanche rating protects against transformer leakage energy spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NM50N	Same die, TO-220 package; R_thj-case = 3.1 °C/W vs. 0.66 °C/W	Requires larger heatsink; unsuitable for high-power density SMT layouts	Select when through-hole assembly, manual prototyping, or lower-volume production is preferred
IPP60R099C6	600 V, 0.099 Ω, 27 A; Infineon CoolMOS™ C6; Q_g = 85 nC, C_iss = 2250 pF	Slightly lower gate charge but higher V_DSS; different gate threshold (2.5–3.5 V vs. 2–4 V)	Select when tighter V_GS(th) distribution or lower EMI is prioritized over ST's avalanche test guarantee

Compared with STP30NM50N and IPP60R099C6, STB30NM50N offers superior thermal performance in SMT form factor and factory-verified avalanche ruggedness - critical for reliability in unregulated industrial environments where transient overloads occur.

Availability

STB30NM50N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for STB30NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The MDmesh™ II Power MOSFET product line targets high-efficiency, high-voltage switching applications - specifically engineered to reduce both conduction and switching losses in SMPS, PFC, and motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB30NM50N supports 17 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the 150 °C maximum junction temperature under sustained load conditions with appropriate heatsinking.

Does STB30NM50N have an integrated gate resistor?

No, STB30NM50N does not include an integrated gate resistor. The gate input resistance is measured at 2.7 Ω (at 1 MHz, open-drain configuration), which is the intrinsic channel resistance - external gate resistors (typically 5–22 Ω) must be used to control switching speed, suppress ringing, and limit peak gate current during turn-on/turn-off.

Can STB30NM50N replace STP30NM50N in an existing TO-220 design?

Direct replacement is not mechanically feasible due to package differences: STB30NM50N uses surface-mount D²PAK, while STP30NM50N is through-hole TO-220. Electrical parameters match closely, but PCB layout, thermal interface, and assembly process must be redesigned to accommodate the D²PAK footprint and exposed drain pad soldering requirements.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C?

At T_j = 150 °C, the body diode's reverse recovery charge is 10 µC, per Table 8 in the datasheet. This value is 25% higher than the 8 µC measured at 25 °C, reflecting increased minority carrier lifetime at elevated temperature - a critical parameter for designing snubber networks and estimating commutation losses in bridge configurations.

STB30NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 94 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB30NM50N FAQ

1.How can I place an order for STB30NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB30NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB30NM50N reliable?

The price and inventory of STB30NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30NM50N is usually 5 days.

3.What payment methods are accepted for STB30NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB30NM50N?

STB30NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB30NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB30NM50N?

For technical support, including STB30NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30NM50N requirements.

6.How does Aetrix verify that STB30NM50N is sourced from the original manufacturer or authorized distributors?

All STB30NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30NM50N meets industry standards.

7.What is the process for return or replacement of STB30NM50N?

All STB30NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB30NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB30NM50N part is unused and in its original packaging.

Return procedure for STB30NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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