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STMicroelectronics STB30NM60ND
- Part No.:
- STB30NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB30NM60ND.pdf
- Description:
- MOSFET N-CH 600V 25A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,470
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Product details
Overview
STB30NM60ND from STMicroelectronics is an N-channel 600 V, 0.11 Ω RDS(on), 25 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in D²PAK (TO-263) package. It delivers high dv/dt immunity (48 V/ns), 100% avalanche tested ruggedness (EAS = 900 mJ), and low gate charge (Qg = 100 nC), making it suitable for ZVS phase-shift converters and hard-switched bridge topologies.
For engineers reviewing the STB30NM60ND datasheet, STB30NM60ND pinout, STB30NM60ND application, or STB30NM60ND equivalent, key selection criteria include its 600 V VDSS, fast diode trr = 170 ns at 25 °C, Rthj-case = 0.66 °C/W, and ECOPACK® lead-free compliance - all critical for high-efficiency industrial SMPS and motor drive designs.
Technical Context
This FDmesh™ II device uses a vertical strip layout combining reduced on-resistance with intrinsic fast-recovery diode performance. Its 125 pF Coss,eq enables efficient soft-switching in resonant topologies, while the 40 V/ns rated dv/dt capability ensures robust operation under high-speed switching transients.
The MOSFET features low input capacitance (Ciss = 2800 pF), gate input resistance of 3.0 Ω, and gate threshold voltage tightly specified at 3–5 V. Its 150 °C maximum junction temperature and 100% unclamped inductive switching (UIS) testing support reliable operation in thermally constrained power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands DC bus voltages up to 480 V in 400 V AC-input PFC and offline SMPS applications |
| RDS(on) max | 0.13 Ω @ VGS = 10 V, ID = 12.5 A - Enables <1.6 W conduction loss at 25 A continuous drain current |
| Qg | 100 nC - Reduces gate driver power requirement and switching transition time in high-frequency converters |
| trr / Qrr | 170 ns / 1.2 µC @ TJ = 25 °C - Minimizes diode reverse recovery losses and EMI in bridge-leg commutation |
| Rthj-case | 0.66 °C/W - Allows >150 W dissipation with modest heatsinking, supporting compact 1–2 kW power stage layouts |
| EAS | 900 mJ - Guarantees single-pulse avalanche survivability during transient overvoltage events without derating |
| dv/dt rating | 40 V/ns - Ensures immunity to parasitic turn-on in high-di/dt half-bridge configurations |
Pinout & Package
D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB mounting and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power source return path | Low-inductance connection point for source loop; ties directly to PCB ground plane |
| 2 (Gate) | Control terminal | High-impedance input requiring <100 nC charge; sensitive to ESD and ringing - needs local RC snubber |
| 3 (Drain) | Main power output node | Internally connected to large copper tab; must be soldered to thermal pad for Rthj-case = 0.66 °C/W performance |
Key Features
| Feature | Design Value |
|---|---|
| FDmesh™ II vertical structure | Enables 0.11 Ω RDS(on) in D²PAK while retaining fast diode recovery (trr = 170 ns) |
| 100% avalanche tested | Validated UIS robustness to 900 mJ single-pulse energy - eliminates need for external clamping in many designs |
| Low Ciss/Coss ratio | Ciss = 2800 pF, Coss = 200 pF - Improves Miller-effect immunity and reduces gate-drive losses |
| ECOPACK® compliance | Lead-free second-level interconnect per JEDEC JESD97 - supports RoHS-compliant industrial manufacturing |
| High dv/dt immunity | Rated 40 V/ns - prevents spurious turn-on in high-side switching without active Miller clamp |
Applications
| Industrial SMPS | ZVS Phase-Shift Converter |
|---|---|
|
Use Scenario: 1.5 kW telecom rectifier with 400 V DC output and 94% efficiency target. IC Role / Device Role / Timing Role: High-side primary switch in full-bridge topology operating at 100–200 kHz with zero-voltage switching. Use Value: Fast diode recovery (trr = 170 ns) and low Qgd/Qg ratio minimize dead-time losses and improve light-load regulation. |
Use Scenario: 2 kW server PSU using phase-shifted full-bridge with synchronous rectification. IC Role / Device Role / Timing Role: Primary-side switching device handling 25 A RMS current with 600 V blocking capability. Use Value: 0.11 Ω RDS(on) and 0.66 °C/W Rthj-case enable high-power density without forced air cooling. |
| Motor Drive Inverter | UPS Inverter Stage |
|
Use Scenario: 3-phase 7.5 kW HVAC inverter with IGBT replacement goal. IC Role / Device Role / Timing Role: Upper-leg switch in 600 V DC-link inverter with 16 kHz PWM and active short-circuit protection. Use Value: 100% avalanche rating ensures survival during shoot-through fault conditions without external crowbar circuits. |
Use Scenario: Online double-conversion UPS with 480 V DC bus and battery backup. IC Role / Device Role / Timing Role: Bidirectional switch in H-bridge inverter stage delivering pure sine-wave 230 V AC output. Use Value: Low Coss,eq (125 pF) and high dv/dt immunity (40 V/ns) reduce switching noise and improve EMI filter sizing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NM60ND | Same die, TO-220 package; Rthj-case = 0.66 °C/W identical, but higher Rthj-amb (62.5 vs 30 °C/W on PCB) | Preferred for prototyping or low-volume through-hole assembly; less suitable for high-density SMT production | Select when manual soldering or heatsink-mounting is required; avoid in space-constrained SMT layouts |
| STW30NM60ND | Same die, TO-247 package; Rthj-case = 0.66 °C/W, but larger footprint and higher Ciss (2900 pF) | Better suited for >3 kW systems with discrete heatsinks and lower switching frequency (<75 kHz) | Choose for highest reliability in industrial inverters where mechanical robustness outweighs PCB area constraints |
Compared with STP30NM60ND and STW30NM60ND, the STB30NM60ND offers optimal thermal performance per unit PCB area due to its D²PAK footprint and direct thermal pad coupling - critical for compact, high-power-density designs where airflow is limited.
Availability
STB30NM60ND is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, motor drive inverters, and UPS inverter stages requiring stable component supply and long-term manufacturability.
Supply support for STB30NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
The FDmesh™ II series was developed specifically for high-efficiency, high-reliability power conversion - targeting bridge-based topologies where fast diode recovery, avalanche ruggedness, and low conduction loss are simultaneously essential.
FAQ
What is the maximum continuous drain current for STB30NM60ND at 100 °C case temperature?
The maximum continuous drain current is 15.8 A at TC = 100 °C, as specified in Table 2 of the datasheet. This value is limited by thermal constraints, not silicon current capability, and assumes proper PCB copper area and thermal via design to maintain Rthj-case ≤ 0.66 °C/W.
Does STB30NM60ND require a gate resistor for safe operation?
Yes - a gate resistor (typically 4.7 Ω) is required to control dV/dt during turn-on and suppress oscillation, as validated in the datasheet's switching test circuit (Figure 18). Omitting it risks gate ringing, overshoot, and premature failure due to excessive peak gate voltage beyond ±25 V rating.
Can STB30NM60ND replace older STB30NM60N devices?
No - STB30NM60ND is not a drop-in replacement for STB30NM60N. The "D" suffix denotes FDmesh™ II technology with faster diode recovery (trr = 170 ns vs ~300 ns), lower RDS(on) (0.11 Ω vs 0.14 Ω), and improved avalanche rating (900 mJ vs 600 mJ); layout and gate drive may need revalidation.
Is the body diode in STB30NM60ND suitable for synchronous rectification?
No - the body diode is optimized for fast recovery in freewheeling/commutation roles, not low forward voltage. Its VSD = 1.6 V at 25 A is significantly higher than dedicated Schottky or MOSFET synchronous rectifiers; use only for clamping or non-critical freewheeling paths.
STB30NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB30NM60ND FAQ
1.How can I place an order for STB30NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STB30NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB30NM60ND reliable?
The price and inventory of STB30NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB30NM60ND is usually 5 days.
3.What payment methods are accepted for STB30NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB30NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB30NM60ND?
STB30NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB30NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB30NM60ND?
For technical support, including STB30NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB30NM60ND requirements.
6.How does Aetrix verify that STB30NM60ND is sourced from the original manufacturer or authorized distributors?
All STB30NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB30NM60ND meets industry standards.
7.What is the process for return or replacement of STB30NM60ND?
All STB30NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB30NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB30NM60ND part is unused and in its original packaging.
Return procedure for STB30NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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