STMicroelectronics STB31N65M5

Overview

STB31N65M5 from STMicroelectronics is an N-channel 650 V, 124 mΩ typ. (148 mΩ max), 22 A MDmesh M5 Power MOSFET in D²PAK (TO-263) package. It delivers ultra-low R_DS(on), high avalanche ruggedness (410 mJ E_AS), and fast switching (t_d(v) = 46 ns, Q_g = 45 nC) for high-efficiency SMPS in industrial AC-DC adapters and server power supplies.

For engineers reviewing the STB31N65M5 datasheet, STB31N65M5 pinout, STB31N65M5 application, or STB31N65M5 equivalent, key selection criteria include its 650 V V_(BR)DSS, 148 mΩ R_DS(on) at 10 V_GS, 88 A pulsed drain current, 150 W P_TOT (D²PAK), and 0.83 °C/W R_thJC thermal resistance - critical for high-power hard-switched topologies.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve optimized charge balance and reduced specific on-resistance. Its 1865 pF C_iss, 4.2 pF Crss, and low 2.8 Ω intrinsic gate resistance enable precise gate drive control and minimal switching loss in 100–500 kHz converters.

The integrated source-drain diode features 336 ns t_rr and 5 μC Q_rr at 25 °C (406 ns / 6 μC at 150 °C), supporting ZVS-capable resonant designs. Its 15 V/ns diode recovery dv/dt rating and 50 V/ns MOSFET dv/dt ruggedness ensure robust operation under fast transient conditions.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-row 3-lead outline with exposed drain tab for thermal and electrical connection. Dimensions per DS8912 Rev 5 Table 8 (A = 4.4–4.6 mm, D = 8.95–9.35 mm, E = 10.0–10.4 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP31N65M5 and STW31N65M5, the STB31N65M5 offers identical electrical performance in a thermally efficient, surface-mount D²PAK package - ideal for automated manufacturing and space-constrained high-power converters where thermal path optimization is critical.

Availability

STB31N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, solar microinverters, and EV on-board chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STB31N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh M5 product line targets high-efficiency, high-voltage power conversion - specifically engineered to replace older superjunction MOSFETs in 600–650 V SMPS, PFC, and inverter applications demanding lowest R_DS(on) × Q_g.

FAQ

What is the maximum continuous drain current for STB31N65M5 at 100 °C case temperature?

The maximum continuous drain current is 13.9 A at T_C = 100 °C, as specified in Table 1 of DS8912 Rev 5. This value is limited by junction temperature (T_J ≤ 150 °C) and package thermal resistance (R_thJC = 0.83 °C/W). Derating must be applied above 25 °C case temperature using the linear relationship defined in the Safe Operating Area curve (Figure 1).

Does STB31N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain body diode. At T_J = 25 °C, it exhibits t_rr = 336 ns, Q_rr = 5 μC, and I_RRM = 30 A under ISD = 22 A, di/dt = 100 A/μs, V_DD = 100 V. At 150 °C, t_rr increases to 406 ns and Q_rr to 6 μC - critical for selecting snubber components in hard-switched topologies.

Can STB31N65M5 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, it is 100% avalanche tested per datasheet. The single-pulse avalanche energy E_AS is 410 mJ at T_J = 25 °C, with I_AR = 5 A and V_DD = 50 V. This rating applies to unclamped inductive switching events and supports snubberless flyback and active-clamp forward designs without additional protection circuitry.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 3 V (min) to 5 V (max) at 25 °C, with typical value 4 V. Figure 11 shows normalized V_GS(th) decreases ~10% from –50 °C to 150 °C, meaning threshold drops to ~3.6 V at 150 °C - important for ensuring reliable turn-off margin in high-temperature environments.