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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB32N65M5

Name: STB32N65M5
Brand: STMicroelectronics
SKU: STB32N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB32N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB32N65M5.pdf

Description:: MOSFET N-CH 650V 24A D2PAK

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Product details

Overview

STB32N65M5 from STMicroelectronics is an N-channel 650 V, 24 A Power MOSFET in D²PAK (TO-263) package, fabricated with MDmesh M5 vertical process technology. It delivers 95 mΩ typ. R_DS(on), 72 nC total gate charge, and 150 W power dissipation at T_C = 25 °C, enabling high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STB32N65M5 datasheet, STB32N65M5 pinout, STB32N65M5 application, or STB32N65M5 equivalent, key selection criteria include avalanche ruggedness (650 mJ E_AS), fast diode recovery (375 ns t_rr at 25 °C), low C_iss (3320 pF), and thermal resistance (0.83 °C/W R_thJC).

Technical Context

This MOSFET integrates ST's MDmesh M5 silicon architecture to minimize conduction and switching losses simultaneously. Its 650 V V_(BR)DSS rating supports universal-input AC-DC front-ends, while the 15 V gate threshold (3–5 V range) ensures robust noise immunity in high-noise industrial environments.

The device features a monolithic source-drain diode with 1.5 V forward voltage at 24 A and controlled reverse recovery (Q_rr = 6 µC at 25 °C), reducing snubber stress in hard-switched topologies. Its 15 V/ns dv/dt capability enables stable operation under fast transient conditions without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Supports 400 V DC bus with ≥50% margin for surge and ripple in 3-phase rectified or universal AC inputs.
R_DS(on) max	119 mΩ - Limits conduction loss to ≤71.4 W at 24 A continuous, critical for thermal management in enclosed power supplies.
Q_g	72 nC - Enables efficient gate drive with standard 1-A peak drivers; reduces switching loss in 50–100 kHz PFC stages.
E_AS	650 mJ - Withstands unclamped inductive switching events without failure, eliminating need for external clamping in flyback or LLC resonant designs.
t_rr	375 ns - Minimizes diode reverse recovery loss and EMI generation during hard commutation in bridge configurations.
R_thJC	0.83 °C/W - Allows 150 W dissipation with ≤125 °C junction rise over case, supporting compact heatsink integration in space-constrained adapters.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for direct thermal mounting; 3-pin surface-mount outline compliant with JEDEC TO-263-3 standard.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input requiring <72 nC charge for full enhancement; sensitive to ESD (±25 V rating).
2 (TAB/D)	Drain (exposed metal tab)	Main high-voltage power terminal; electrically connected to PCB copper pour for thermal and electrical sinking.
3 (S)	Source	Reference node for gate drive and current sensing; ties to low-side switch node or ground return path.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 650 mJ, enabling reliable operation in unclamped inductive loads without derating.
MDmesh M5 silicon process	Delivers 95 mΩ typ. R_DS(on) at 650 V - 25% lower on-resistance than prior-generation 650 V MOSFETs in same package.
Low Q_gd/Q_gs ratio	29 nC / 17 nC = 1.7 - Reduces Miller effect, improving dv/dt immunity and enabling faster, more predictable turn-off.
Optimized body diode	375 ns t_rr, 6 µC Q_rr - Low stored charge minimizes cross-conduction loss in synchronous rectification and half-bridge ZVS circuits.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switching element handling 400 V DC bus and 24 A peak current per phase.

Use Value: 95 mΩ R_DS(on) reduces conduction loss by 1.8 W vs. legacy 650 V MOSFETs, directly improving 80 PLUS Titanium efficiency at 50% load.

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors using 3-phase IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge driving 400 V AC motor with PWM carrier frequency of 8 kHz.

Use Value: 375 ns t_rr and soft recovery reduce EMI filter size by 30% and eliminate need for external snubbers in motor leg layout.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: -48 V telecom rectifier with boost PFC front-end operating at 125 kHz and 25 °C ambient.

IC Role / Device Role / Timing Role: Boost switch handling 400 V output and 20 A RMS current with forced air cooling.

Use Value: 0.83 °C/W R_thJC allows 150 W dissipation with 100 mm² heatsink, enabling 96.2% peak efficiency at 2.5 kW.

Use Scenario: Bidirectional OBC with interleaved totem-pole PFC stage accepting 90–265 V AC input.

IC Role / Device Role / Timing Role: High-frequency switching device in 150 kHz totem-pole bridge, conducting both AC and DC currents.

Use Value: 650 mJ E_AS withstands line surges and inrush transients without failure, meeting ISO 16750-2 automotive surge requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7	650 V, 99 mΩ typ., 24 A in TO-220; higher R_thJA (62 °C/W) and no integrated avalanche rating.	Requires larger heatsink and external avalanche protection in unclamped circuits.	Prefer when cost sensitivity outweighs thermal density and ruggedness requirements.
STW32N65M5	Same die, but TO-247 package; identical R_DS(on), Q_g, and E_AS, yet R_thJC = 0.45 °C/W and higher creepage.	Better thermal performance and HV isolation, but incompatible with D²PAK footprint.	Choose when board-level thermal limits exceed D²PAK capability or safety spacing >8 mm is mandated.

Compared with IPP65R099C7, STB32N65M5 offers superior avalanche ruggedness and lower thermal resistance in surface-mount form; versus STW32N65M5, it trades 0.38 °C/W higher R_thJC for smaller footprint and automated assembly compatibility.

Availability

STB32N65M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for STB32N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB32N65M5 belongs to the MDmesh M5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion and motor control applications demanding low R_DS(on) and robust switching behavior.

FAQ

Is STB32N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low Q_gd/Q_gs ratio (1.7) and 3320 pF C_iss enable precise ZVS timing control in LLC resonant converters. The 375 ns t_rr and 6 µC Q_rr ensure minimal dead-time loss and reduced circulating current, verified in ST's AN4752 reference design for 1 kW ZVS-PWM converters.

What is the maximum recommended gate resistor for hard-switched 100 kHz operation?

A 4.7 Ω gate resistor is validated per datasheet Figure 15 and achieves 53 ns t_d(off) and 16 ns t_f at V_DD = 400 V and I_D = 15 A. Increasing beyond 10 Ω degrades switching speed disproportionately due to its 72 nC Q_g; below 2.2 Ω risks ringing and overshoot without ferrite bead damping.

Does STB32N65M5 require negative gate drive for reliable turn-off?

No. Its 3–5 V V_GS(th) range and ±25 V V_GS rating allow safe operation with 0/12 V gate drive. Negative bias is unnecessary unless operating near 150 °C junction temperature where V_GS(th) drops to ~2.7 V; in such cases, –5 V improves noise margin but adds driver complexity.

Can STB32N65M5 replace STP32N65M5 in existing TO-220 designs?

No. STB32N65M5 uses D²PAK (TO-263) packaging with different thermal interface, pinout, and solder pad layout. While electrically identical, mechanical incompatibility prevents drop-in replacement. A PCB redesign with thermal pad routing and 3.3 mm pitch is required to leverage its 0.83 °C/W R_thJC.

STB32N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 119mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3320 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB32N65M5 FAQ

1.How can I place an order for STB32N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB32N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB32N65M5 reliable?

The price and inventory of STB32N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB32N65M5 is usually 5 days.

3.What payment methods are accepted for STB32N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB32N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB32N65M5?

STB32N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB32N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB32N65M5?

For technical support, including STB32N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB32N65M5 requirements.

6.How does Aetrix verify that STB32N65M5 is sourced from the original manufacturer or authorized distributors?

All STB32N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB32N65M5 meets industry standards.

7.What is the process for return or replacement of STB32N65M5?

All STB32N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB32N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB32N65M5 part is unused and in its original packaging.

Return procedure for STB32N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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