STMicroelectronics STB32NM50N

Overview

STB32NM50N from STMicroelectronics is an N-channel 500 V, 130 mΩ (max), 22 A Power MOSFET in D²PAK package, built on MDmesh™ II vertical strip technology. It delivers ultra-low gate charge (62.5 nC) and input capacitance (1973 pF), enabling high-efficiency hard-switching and resonant topologies in industrial SMPS, solar inverters, and UPS systems.

For engineers reviewing the STB32NM50N datasheet, STB32NM50N pinout, STB32NM50N application, or STB32NM50N equivalent, key selection criteria include avalanche ruggedness (340 mJ EAS), fast switching (td(on) = 21.5 ns, tf = 23.6 ns), and thermal performance (RthJC = 0.66 °C/W) in compact surface-mount D²PAK packaging.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize RDS(on) × Qg figure-of-merit. Its 500 V V(BR)DSS rating and 150 °C max junction temperature support operation in high-voltage DC-link stages.

The integrated body diode features low forward voltage (1.6 V at 22 A) and controlled reverse recovery (Qrr = 5 µC, trr = 328 ns at 25 °C), reducing commutation losses in bridge configurations. Avalanche capability is 100% production-tested to 7 A repetitive current.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended heat transfer via exposed drain tab (pin 2/TAB); requires minimum 1 in² 2-oz copper pad for rated R_thJA = 30 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW32NM50N, STB32NM50N offers superior PCB thermal management in space-constrained designs; versus IPP60R190C7, it provides lower conduction loss at 500 V with proven avalanche ruggedness-critical for cost-sensitive industrial SMPS where reliability outweighs ultra-high-frequency optimization.

Availability

STB32NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC optimizers, uninterruptible power supplies, and motor drive inverter stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STB32NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage power conversion in industrial and renewable energy systems where low R_DS(on) × Q_g and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STB32NM50N supports 13.86 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS9167 Rev 2. This derating reflects thermal limitations of the D²PAK package and must be validated using measured T_C under actual board layout and airflow conditions.

Does the STB32NM50N have an integrated body diode, and what are its key recovery characteristics?

Yes, it includes a monolithic source-drain body diode rated for 22 A continuous and 88 A pulsed current. At 25 °C, its reverse recovery charge is 5 µC and recovery time is 328 ns under standard test conditions (I_SD = 22 A, di/dt = 100 A/µs, V_DD = 60 V), enabling efficient operation in synchronous rectification and bridge configurations.

Can STB32NM50N replace STW32NM50N in existing designs?

Electrically identical, but package-dependent: STB32NM50N (D²PAK) replaces STW32NM50N (TO-247) only if PCB layout accommodates surface-mount assembly and thermal design meets R_thJA = 30 °C/W requirements. Mechanical mounting, creepage/clearance, and reflow profile must be requalified.

Is the gate threshold voltage compatible with standard 10 V logic-level gate drivers?

Yes - V_GS(th) is specified from 2 V to 4 V (typical 3 V), ensuring reliable turn-on with 10 V gate drive. The device achieves full enhancement at V_GS = 10 V, delivering its rated R_DS(on) of 130 mΩ, and remains fully enhanced up to the absolute maximum V_GS of ±25 V.