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STMicroelectronics STB33N60DM6

Name: STB33N60DM6
Brand: STMicroelectronics
SKU: STB33N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB33N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB33N60DM6.pdf

Description:: MOSFET N-CH 600V 25A D2PAK

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Product details

Overview

STB33N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 115 mΩ typ. R_DS(on) at V_GS = 10 V, 25 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 105 ns @ T_j = 25 °C), and 100% avalanche tested. It targets ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STB33N60DM6 datasheet, STB33N60DM6 pinout, STB33N60DM6 application, or STB33N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), Q_rr (0.47 µC), C_iss (1500 pF), gate charge (35 nC), and D²PAK thermal resistance (R_thJC = 0.66 °C/W).

Technical Context

This MDmesh DM6 MOSFET integrates a Zener-protected gate and optimized cell structure to achieve lower R_DS(on) per die area versus prior MDmesh generations while maintaining ultra-low Q_rr (0.47 µC) and t_rr (105 ns). Its fast-recovery body diode enables hard-switched and resonant topologies without external freewheeling diodes.

The device exhibits extreme dv/dt ruggedness (100 V/ns) and di/dt capability (1000 A/µs), validated under unclamped inductive switching with E_AS = 360 mJ. Its C_oss,eq of 225 pF supports low output capacitance energy (E_OSS = 12 µJ at 480 V), critical for soft-switching efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS converters with margin.
R_DS(on) max	128 mΩ - Ensures <1.6 W conduction loss at 25 A, enabling high-power density designs.
Q_g	35 nC - Enables fast switching with low gate drive power, reducing driver IC stress.
t_rr	105 ns - Minimizes reverse recovery losses in bridge-leg commutation at 100 kHz+.
R_thJC	0.66 °C/W - Allows 190 W dissipation at T_C = 25 °C; supports compact heatsink integration.
E_AS	360 mJ - Guarantees robustness against single-pulse inductive energy in motor drives or SMPS.
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on during high-speed voltage transients in half-bridge operation.

Pinout & Package

Supplied in D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. Package meets ECOPACK environmental compliance standards.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Power Drain Terminal	Electrically and thermally connected to internal drain; mounted directly to heatsink.
Pin 1 (Gate)	Control Input	Receives gate drive signal; Zener-protected to ±25 V; low input capacitance (C_iss = 1500 pF).
Pin 2 (Source)	Reference Node	Serves as return path for load current and gate drive loop; critical for low-inductance layout.
Pin 3 (Source)	Redundant Source Connection	Dual-source pins reduce source inductance and improve switching stability in high-di/dt applications.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 105 ns and Q_rr = 0.47 µC enable efficient synchronous rectification without external diodes.
Low R_DS(on) per area	115 mΩ typ. at 25 °C in D²PAK delivers higher current density than prior MDmesh DM2/DM3 devices.
Low gate charge	Q_g = 35 nC reduces gate driver power loss and allows use of smaller, cost-effective drivers.
100% avalanche tested	E_AS = 360 mJ rating ensures reliable operation under unclamped inductive fault conditions.
Zener-protected gate	±25 V gate-source rating with integrated protection prevents ESD or overvoltage damage during handling or layout.

Applications

Server PSU LLC Resonant Converters

Industrial Motor Drive Inverters

Use Scenario: Primary-side switch in 3–5 kW server power supplies using LLC topology with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 100–300 kHz with zero-voltage switching; body diode conducts during dead-time.

Use Value: Low Q_rr (0.47 µC) and t_rr (105 ns) minimize dead-time losses and improve light-load efficiency by >1.2%.

Use Scenario: Phase-leg switch in 7.5 kW variable-frequency drives controlling 3-phase induction motors.

IC Role / Device Role / Timing Role: N-channel power switch in 6-pack inverter module; handles repetitive 25 A RMS current and 80 A pulsed surge.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during bus transients; R_thJC = 0.66 °C/W enables forced-air cooling without liquid systems.

Telecom Rectifier Modules

EV Onboard Charger PFC Stages

Use Scenario: Boost switch in 3 kW telecom rectifiers with universal AC input and 53–58 V DC output.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) boost switch; body diode recovers at line frequency zero-crossings.

Use Value: Low C_oss,eq (225 pF) reduces turn-on loss; 100% avalanche test ensures reliability during AC line surges.

Use Scenario: Active clamp flyback or totem-pole PFC switch in 6.6 kW EV onboard chargers.

IC Role / Device Role / Timing Role: High-frequency switching node handling 25 A peak current and 600 V blocking; operates at 65–120 kHz.

Use Value: Fast-recovery diode eliminates need for discrete SiC Schottky; Q_g = 35 nC enables direct MCU GPIO driving with gate buffer.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW33N60DM6	Same die, TO-247 package; R_thJC = 0.45 °C/W vs D²PAK's 0.66 °C/W; higher thermal performance but larger footprint.	Better suited for high-power industrial inverters where heatsink space permits TO-247 mounting.	Select when thermal budget is tighter than PCB area constraints; requires different mechanical layout and mounting hardware.
IPP60R125CFD7	650 V, 125 mΩ, 25 A; CoolMOS CFD7 with lower Q_g (29 nC) but higher Q_rr (1.1 µC); no integrated Zener protection.	Preferred in high-frequency SMPS (>200 kHz) where gate drive loss dominates, but less robust in hard-switched bridges.	Choose for ultra-high-frequency PFC where Q_g reduction outweighs Q_rr penalty; add external gate protection circuitry.

Compared with STW33N60DM6, STB33N60DM6 trades 0.21 °C/W higher junction-to-case thermal resistance for surface-mount assembly and reduced system height; versus IPP60R125CFD7, it offers superior body diode softness and integrated gate protection at the cost of slightly higher gate charge.

Availability

STB33N60DM6 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for STB33N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh DM6 product line targets high-efficiency, high-frequency power conversion systems-specifically ZVS resonant converters, telecom rectifiers, and industrial motor drives demanding low Q_rr, high dv/dt immunity, and avalanche reliability.

FAQ

What is the maximum recommended gate resistor for STB33N60DM6 in a 100 kHz ZVS LLC converter?

A 4.7 Ω gate resistor is validated in the datasheet for resistive load switching tests at 100 kHz (V_DD = 300 V, I_D = 12.5 A). This value balances switching speed (t_f = 35 ns) and EMI control; values below 3.3 Ω increase dv/dt stress on gate driver without meaningful efficiency gain.

Can STB33N60DM6 replace STP33N60DM6 in existing TO-220 designs?

No-STB33N60DM6 uses D²PAK (TO-263) packaging with drain-tab-down orientation and dual-source pins, while STP33N60DM6 is TO-220 with isolated tab. Mechanical footprint, thermal interface, and solder reflow profile differ significantly; redesign of PCB layout and heatsink mounting is required.

Does the body diode require external snubbing in a 400 V, 25 A bridge configuration?

No-its fast-recovery characteristics (t_rr = 105 ns, Q_rr = 0.47 µC) and soft recovery waveform eliminate need for RC snubbers in typical 100–300 kHz bridge applications. Snubbing may still be needed only if layout parasitics exceed 20 nH source inductance or dv/dt exceeds 100 V/ns.

What is the safe operating area (SOA) limitation at T_C = 100 °C?

At T_C = 100 °C, continuous drain current is derated to 16 A (per Table 1), and pulse current is limited to 80 A with pulse width constrained by SOA boundaries. The SOA curve (Figure 1) shows that at 300 V V_DS, maximum sustainable pulse current drops to ~22 A for 10 ms pulses due to thermal saturation.

STB33N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 128mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB33N60DM6 FAQ

1.How can I place an order for STB33N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB33N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB33N60DM6 reliable?

The price and inventory of STB33N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB33N60DM6 is usually 5 days.

3.What payment methods are accepted for STB33N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB33N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB33N60DM6?

STB33N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB33N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB33N60DM6?

For technical support, including STB33N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB33N60DM6 requirements.

6.How does Aetrix verify that STB33N60DM6 is sourced from the original manufacturer or authorized distributors?

All STB33N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB33N60DM6 meets industry standards.

7.What is the process for return or replacement of STB33N60DM6?

All STB33N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STB33N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB33N60DM6 part is unused and in its original packaging.

Return procedure for STB33N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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