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STMicroelectronics STB33N60M2
- Part No.:
- STB33N60M2
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB33N60M2.pdf
- Description:
- MOSFET N-CH 600V 26A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,634
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Product details
Overview
STB33N60M2 from STMicroelectronics is an N-channel 600 V, 26 A Power MOSFET in D²PAK (TO-263) package, fabricated with MDmesh M2 technology. It delivers 0.108 Ω typical RDS(on), 45.5 nC total gate charge, and 135 pF equivalent output capacitance (Coss,eq), enabling high-efficiency operation in resonant LLC converters and hard-switched SMPS.
For engineers reviewing the STB33N60M2 datasheet, STB33N60M2 pinout, STB33N60M2 application, or STB33N60M2 equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt ruggedness, 50 V/ns MOSFET dv/dt capability, 450 mJ single-pulse avalanche energy, and Zener-protected gate structure for robust system-level reliability.
Technical Context
This device employs a strip-based MDmesh M2 vertical structure to minimize conduction loss while optimizing switching behavior-evidenced by low Coss (85 pF) and Crss (2.5 pF), plus tightly controlled Qgd/Qg ratio (18.5/45.5 nC). Its 0.66 °C/W RthJC enables high-power density thermal design in compact converters.
The integrated body diode exhibits 375 ns reverse recovery time at 25 °C and 478 ns at 150 °C, with 5.6–7.7 µC Qrr, supporting fast-recovery requirements in phase-shifted full-bridge and LLC topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V rated blocking voltage - supports 400 V bus designs with 50% safety margin for transient overvoltage |
| RDS(on) max | 0.125 Ω at VGS = 10 V, ID = 13 A - ensures <1.6 W conduction loss at 13 A continuous drain current |
| Qg | 45.5 nC - enables efficient 100–300 kHz switching with moderate gate driver strength (e.g., 2 A peak) |
| Coss,eq | 135 pF - reduces turn-off energy loss and improves zero-voltage switching (ZVS) initiation in resonant converters |
| EAS | 450 mJ - provides unclamped inductive switching robustness for transformer-coupled topologies without external clamping |
| Tj max | 150 °C - allows sustained operation under high ambient conditions when mounted on 1-in² 2-oz copper PCB |
| dv/dt ruggedness | 50 V/ns - prevents false turn-on during high-speed voltage transients in high-side configurations |
Pinout & Package
Package: D²PAK (TO-263) type A - thermally optimized surface-mount package with exposed drain tab for direct heatsink mounting and low junction-to-case resistance (0.66 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main power drain terminal | Exposed metal tab electrically connected to drain - must be isolated from heatsink unless referenced to same potential; primary thermal path |
| Pin 1 (Gate) | Control input | Low-impedance gate node requiring <5.2 Ω intrinsic resistance; sensitive to ESD and overvoltage (±25 V max) |
| Pin 2 (Source) | Reference return for gate drive and load current | Common source node for internal MOSFET and body diode; critical for gate loop layout to minimize ringing |
| Pin 3 (Source) | Secondary source connection | Redundant source bond wire to reduce source inductance and improve di/dt immunity in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh M2 strip layout | Reduces specific on-resistance by 20% vs. prior-generation superjunction MOSFETs while maintaining high-voltage integrity |
| Zener-protected gate | Integrated gate oxide protection clamps VGS to ±25 V - eliminates need for external gate Zener in most industrial SMPS designs |
| 100% avalanche tested | Each unit validated for 5 A repetitive avalanche current and 450 mJ single-pulse energy - guarantees ruggedness in unclamped inductive loads |
| Optimized Coss profile | Coss remains stable across 0–480 V range - enables predictable ZVS timing and reduced turn-off loss in resonant topologies |
| Low Qgd/Qg ratio | 18.5/45.5 nC (40.7%) - improves Miller immunity and enables faster, more controllable turn-off transitions |
Applications
| LLC Resonant Converter | Phase-Shifted Full-Bridge (PSFB) |
|---|---|
|
Use Scenario: Primary-side switching in server PSU and telecom rectifier modules operating at 200–300 kHz with >96% efficiency targets. IC Role / Device Role / Timing Role: High-side and low-side synchronous rectifier switch with ZVS capability enabled by low Coss,eq and tight Qgd control. Use Value: Enables reliable soft-switching down to 10% load with <0.5% efficiency penalty versus hard-switched alternatives. |
Use Scenario: High-power DC-DC conversion in EV charging stations (11–22 kW) requiring high dv/dt immunity and thermal stability. IC Role / Device Role / Timing Role: Primary-side bridge switch handling 400–800 V DC bus with 50 V/ns MOSFET dv/dt rating preventing spurious turn-on. Use Value: Eliminates need for active Miller clamp circuits, reducing BOM count and gate drive complexity. |
| Industrial Motor Drive Inverter | High-Voltage AC-DC Front-End |
|
Use Scenario: 3-phase IGBT/MOSFET inverter stage in HVAC compressors and pump drives operating up to 60 Hz fundamental frequency. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM dead-time. Use Value: 375 ns trr and 5.6 µC Qrr at 25 °C minimize diode switching loss and EMI generation during commutation. |
Use Scenario: PFC boost switch in 3.3 kW industrial power supplies with universal AC input (90–264 VAC) and 400 V DC output. IC Role / Device Role / Timing Role: Fast-switching, high-voltage boost transistor managing 26 A peak inductor current at 70 kHz. Use Value: 0.108 Ω RDS(on) limits conduction loss to <7 W at full load, supporting natural convection cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R190C7 | 650 V, 0.19 Ω RDS(on), 33 nC Qg, TO-220FP package | Higher RDS(on) increases conduction loss by ~55%; lower Qg eases gate drive but lacks Zener protection | Prefer where cost sensitivity outweighs efficiency and board space is constrained by TO-220 footprint |
| STW33N60M2 | Identical die, TO-247 package with larger tab area and 0.45 °C/W RthJC | Superior thermal performance enables 30 A continuous operation at TC = 100 °C vs. 16 A for STB33N60M2 | Choose when higher power derating or forced-air cooling is required and through-hole assembly is acceptable |
Compared with IPP60R190C7, STB33N60M2 offers 37% lower conduction loss and integrated gate protection; versus STW33N60M2, it trades 30% higher thermal resistance for surface-mount compatibility and reduced PCB assembly cost.
Availability
STB33N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial motor drives, and high-voltage AC-DC front-ends requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STB33N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to the MDmesh M2 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies where low RDS(on), low gate charge, and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STB33N60M2 supports 16 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS9930 Rev 4. This rating accounts for thermal derating due to junction-to-case resistance (0.66 °C/W) and safe operating area limitations under sustained conduction.
Does this MOSFET include integrated gate protection?
Yes - the STB33N60M2 integrates a Zener diode between gate and source to clamp VGS within ±25 V, protecting the gate oxide from overvoltage transients. This eliminates the need for external gate protection in most standard SMPS gate drive circuits.
How does the Coss,eq value differ from standard Coss?
Coss,eq (135 pF) is defined as the constant capacitance yielding the same VDS charging time as the actual nonlinear Coss across 0–480 V. Unlike static Coss (85 pF at 100 V), Coss,eq reflects real-world energy storage in ZVS transitions and directly impacts turn-off loss calculation.
Is the body diode suitable for synchronous rectification?
No - the body diode is optimized for freewheeling, not synchronous rectification. Its 375–478 ns reverse recovery time and 5.6–7.7 µC Qrr generate significant switching loss if used as a controlled rectifier; external Schottky or MOSFET synchronous rectifiers are recommended for that function.
STB33N60M2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II Plus
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1781 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB33N60M2 FAQ
1.How can I place an order for STB33N60M2 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB33N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB33N60M2 reliable?
The price and inventory of STB33N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB33N60M2 is usually 5 days.
3.What payment methods are accepted for STB33N60M2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB33N60M2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB33N60M2?
STB33N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB33N60M2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB33N60M2?
For technical support, including STB33N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB33N60M2 requirements.
6.How does Aetrix verify that STB33N60M2 is sourced from the original manufacturer or authorized distributors?
All STB33N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB33N60M2 meets industry standards.
7.What is the process for return or replacement of STB33N60M2?
All STB33N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB33N60M2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB33N60M2 part is unused and in its original packaging.
Return procedure for STB33N60M2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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