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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB33N60M6

Name: STB33N60M6
Brand: STMicroelectronics
SKU: STB33N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB33N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB33N60M6.pdf

Description:: MOSFET N-CH 600V 25A D2PAK

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Product details

Overview

STB33N60M6 from STMicroelectronics is an N-channel 600 V, 25 A MDmesh M6 superjunction power MOSFET in D²PAK (TO-263) package, featuring 105 mΩ typical R_DS(on), 33.4 nC total gate charge, and 100 V/ns MOSFET dv/dt ruggedness. It delivers low conduction loss and fast switching for high-efficiency LLC and boost PFC converters.

For engineers reviewing the STB33N60M6 datasheet, STB33N60M6 pinout, STB33N60M6 application, or STB33N60M6 equivalent, key selection criteria include avalanche-rated ruggedness (500 mJ E_AS), Zener-protected gate, 15 V/ns diode recovery dv/dt capability, and thermal resistance of 0.66 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's MDmesh M6 technology, optimizing R_DS(on) per die area while maintaining robust switching behavior. Its 128 pF C_oss and 4.2 pF C_rss enable low capacitive losses in hard-switched topologies, and its 1.5 Ω intrinsic gate resistance supports stable gate drive design.

The device integrates a Zener-protected gate structure and is 100% avalanche tested to 4 A repetitive current. Its source-drain diode exhibits 265 ns reverse recovery time at 25 A/100 A/µs, with 3.07 µC Q_rr, enabling reliable operation in resonant and inductive-load circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with margin
R_DS(on) max	125 mΩ - Enables ≤3.1 W conduction loss at 25 A, T_C = 25 °C
I_D cont	25 A - Rated for continuous drain current with heatsink at T_C = 25 °C
Q_g	33.4 nC - Determines gate driver power requirement and switching speed control
E_AS	500 mJ - Confirmed single-pulse avalanche energy at T_j = 25 °C, ID = 4 A
R_thJC	0.66 °C/W - Enables direct thermal path to heatsink; limits junction rise to ~125 °C at 190 W dissipation
dv/dt ruggedness	100 V/ns - Sustains rapid voltage transients without spurious turn-on in high-dV/dt environments

Pinout & Package

Supplied in D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. Package meets ECOPACK environmental compliance standards.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat
Pin 1 (Gate)	Control input	Receives gate drive signal; Zener-protected against ±25 V transients
Pin 2 (Source)	Reference node for gate drive and current sensing	Common return path for load current; used for low-side sensing and gate-source reference
Pin 3 (Source)	Secondary source connection	Redundant source bond for lower inductance and improved current sharing in high-frequency switching

Key Features

Feature	Design Value
MDmesh M6 silicon technology	Delivers 15% lower R_DS(on) per area vs prior MDmesh generations, reducing die size and cost without sacrificing ruggedness
100% avalanche tested	Guarantees minimum 4 A repetitive avalanche current and 500 mJ single-pulse energy handling under defined test conditions
Zener-protected gate	Integrates on-chip gate-body Zener clamp to limit V_GS to ±25 V, eliminating need for external gate protection components
Low C_rss/C_iss ratio	4.2 pF / 1515 pF = 0.28% - Minimizes Miller effect, improving noise immunity and enabling faster turn-off
Optimized for resonant topologies	265 ns t_rr and 3.07 µC Q_rr at 25 A support zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge designs

Applications

Server Power Supplies

Industrial AC-DC Converters

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers and server PSUs operating at 100–300 kHz with LLC resonance.

IC Role / Device Role / Timing Role: High-voltage, high-current synchronous switch in half-bridge LLC primary stage; handles 400–480 V DC bus.

Use Value: 105 mΩ R_DS(on) and 33.4 nC Q_g reduce conduction + switching losses simultaneously, enabling >96% efficiency at full load.

Use Scenario: Boost PFC switch in industrial motor drives and UPS systems requiring universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch operating at 65–100 kHz with 600 V blocking capability.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during line surges; 15.8 A I_D @ 100 °C ensures thermal headroom under derated industrial ambient.

Solar Inverters

EV Onboard Chargers

Use Scenario: DC-DC isolation stage switch in string inverters with 1000 V PV input and 400 V battery interface.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) or phase-shifted full-bridge topology; blocks up to 600 V with low Q_rr.

Use Value: 265 ns t_rr and 3.07 µC Q_rr minimize dead-time losses and EMI generation during ZVS transitions.

Use Scenario: Primary-side switch in bidirectional OBCs converting AC grid to 400/800 V battery with active PFC + isolated DC-DC.

IC Role / Device Role / Timing Role: 600 V-rated switch in interleaved PFC and resonant LLC stages; operates across -40 to 125 °C ambient.

Use Value: -55 to 150 °C T_stg/T_j range and 0.66 °C/W R_thJC support compact thermal design in space-constrained automotive enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R125C7XKSA1	125 mΩ max R_DS(on), 35 nC Q_g, no Zener gate protection, 650 V rating	Lacks integrated gate Zener; requires external clamping; slightly higher switching loss	Preferred where gate drive circuit already includes transient suppression and 650 V margin is required
IXTH30N60L2	140 mΩ max R_DS(on), 42 nC Q_g, 600 V, no avalanche rating published	No specified E_AS or 100% avalanche test; higher Q_g increases driver complexity	Suitable for non-avalanche-critical PFC stages where cost is prioritized over ruggedness

Compared with IPP60R125C7XKSA1 and IXTH30N60L2, STB33N60M6 offers verified avalanche robustness, integrated gate protection, and lower Q_g, making it optimal for mission-critical resonant converters where reliability and driver simplicity are essential.

Availability

STB33N60M6 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB33N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power supplies including LLC resonant converters, boost PFC, and industrial SMPS.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB33N60M6 supports 15.8 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS13003. This derating reflects thermal limitations of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does this MOSFET include integrated gate protection?

Yes - the STB33N60M6 features an integrated Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection components in most standard gate driver configurations, simplifying layout and improving system reliability.

Can STB33N60M6 be used in zero-voltage switching (ZVS) topologies?

Yes - its 265 ns reverse recovery time (t_rr) and 3.07 µC reverse recovery charge (Q_rr) at 25 A are optimized for ZVS operation in LLC and phase-shifted full-bridge converters. The low C_rss (4.2 pF) further enhances controllability during resonant transitions.

What is the thermal resistance from junction to case?

The junction-to-case thermal resistance (R_thJC) is 0.66 °C/W, measured under standard mounting conditions. This value enables precise junction temperature estimation when the device is mounted on a heatsink with known thermal interface resistance, supporting thermal design validation per IEC 61800-5-1.

STB33N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.4 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1515 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB33N60M6 FAQ

1.How can I place an order for STB33N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB33N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB33N60M6 reliable?

The price and inventory of STB33N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB33N60M6 is usually 5 days.

3.What payment methods are accepted for STB33N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB33N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB33N60M6?

STB33N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB33N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB33N60M6?

For technical support, including STB33N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB33N60M6 requirements.

6.How does Aetrix verify that STB33N60M6 is sourced from the original manufacturer or authorized distributors?

All STB33N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB33N60M6 meets industry standards.

7.What is the process for return or replacement of STB33N60M6?

All STB33N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STB33N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB33N60M6 part is unused and in its original packaging.

Return procedure for STB33N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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