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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB34N65M5

Name: STB34N65M5
Brand: STMicroelectronics
SKU: STB34N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB34N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB34N65M5.pdf

Description:: MOSFET N-CH 650V 28A D2PAK

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Product details

Overview

STB34N65M5 from STMicroelectronics is an N-channel 650 V, 90 mΩ typ. (110 mΩ max), 28 A MDmesh M5 Power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency hard-switching and ZVS resonant topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STB34N65M5 datasheet, STB34N65M5 pinout, STB34N65M5 application, or STB34N65M5 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 100% avalanche-tested reliability, 510 mJ single-pulse avalanche energy, and low 62.5 °C/W R_thJA on FR-4 PCB - critical for thermally constrained 1–3 kW power designs.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low R_DS(on) while maintaining high V_DSS rating and robust dv/dt immunity. Its gate threshold voltage (3–5 V) and low Q_g (62.5 nC typ.) support fast, low-loss switching with standard 10 V gate drivers.

The integrated body diode features 350 ns reverse recovery time (T_J = 25 °C) and 5.6 µC Q_rr, enabling reliable operation in inductive switching circuits without external snubbers in many medium-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus designs with ≥50% safety margin for transient overvoltage in industrial PFC and UPS systems
R_DS(on) max	110 mΩ at V_GS = 10 V, I_D = 14 A - enables <1.5 W conduction loss at 28 A continuous drain current in TO-220-equivalent thermal footprint
I_D (T_C = 100 °C)	17.7 A - defines usable continuous current under real-world heatsink-limited thermal conditions
E_AS	510 mJ - quantifies unclamped inductive switching robustness; allows safe operation in flyback and LLC primary-side switching without external clamping
dv/dt ruggedness	50 V/ns - ensures immunity to parasitic turn-on during high-speed switching in bridge configurations with fast-rising node voltages
Q_g	62.5 nC - determines gate drive power requirement (~1.25 mW per MHz at 10 V swing) and influences switching speed control via R_G
C_iss	2700 pF - impacts gate driver loading and Miller effect sensitivity; lower than legacy 650 V MOSFETs by ~35%

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration with 2.54 mm pitch; requires minimum 1 in² 2-oz copper pad for rated 190 W dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; 1.95 Ω gate resistance limits ringing and simplifies driver selection
Pin 2 (D / TAB)	Drain / Thermal Pad	Main high-side power terminal and primary thermal path; electrically connected to exposed copper tab for PCB heat sinking
Pin 3 (S)	Source	Power return and reference for gate drive; ties to low-side switch source or ground plane; carries full load current

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Delivers 90 mΩ typ. R_DS(on) at 650 V - 25% lower on-resistance vs. prior-generation 650 V MOSFETs, reducing conduction losses in high-current PFC stages
100% avalanche tested	Guarantees single-pulse E_AS ≥ 510 mJ - eliminates need for design margining against unclamped inductive energy in motor drives and converters
50 V/ns dv/dt ruggedness	Prevents false turn-on in half-bridge and full-bridge topologies operating above 100 kHz, even with layout-induced coupling
Low Q_gd/Q_gs ratio (28 nC / 17 nC)	Reduces Miller plateau duration and improves controllability during hard switching, easing EMI filter design
Optimized body diode (t_rr = 350 ns)	Enables efficient synchronous rectification replacement in LLC secondaries and reduces need for external Schottky catch diodes

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1.5–2.5 kW active clamp forward or LLC resonant converters.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V DC input with 100–300 kHz switching frequency.

Use Value: 110 mΩ R_DS(on) and 50 V/ns dv/dt rating enable >96% efficiency at full load while maintaining stability across line and load transients.

Use Scenario: Boost PFC stage in 80 PLUS Titanium-certified 1U server PSUs.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing up to 28 A peak current.

Use Value: Low 62.5 °C/W R_thJA on standard PCB allows compact heatsinkless design; 17.7 A I_D @ 100 °C ensures thermal headroom at 70 °C ambient.

Solar Microinverters

EV Onboard Chargers (OBC)

Use Scenario: DC-DC isolation stage in dual-stage microinverter architecture interfacing PV panels to grid-tied H-bridge.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter operating at 150 kHz with 600 V bus.

Use Value: 510 mJ E_AS withstands lightning surge-induced inductive kickback; 90 mΩ R_DS(on) minimizes thermal stress during partial shading conditions.

Use Scenario: Primary switch in bidirectional CLLC resonant converter for 6.6 kW OBC AC/DC + DC/DC stages.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rated power transistor supporting ZVS across full load range.

Use Value: 62.5 nC Q_g and low C_oss (75 pF) reduce gate drive losses and improve ZVS soft-switching window at 200–300 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP34N65M5	Same die, TO-220 package; R_thJC = 0.66 °C/W vs. D²PAK's 0.66 °C/W, but R_thJA = 62.5 °C/W (same) - mechanical mounting differs	Requires through-hole PCB assembly and bolted heatsink; less suitable for automated SMT lines	Select when legacy TO-220 footprint compatibility or manual heatsink attachment is required
IPP65R099C7	Infineon CoolMOS C7; 650 V, 99 mΩ, 28 A; higher Q_g (72 nC), lower dv/dt rating (25 V/ns), no 100% avalanche test guarantee	Lacks guaranteed avalanche ruggedness; may require additional snubbering in hard-switched PFC	Choose only if gate drive voltage tolerance >12 V is available and system-level avalanche testing is performed

Compared with STP34N65M5, STB34N65M5 offers identical electrical performance in a surface-mount D²PAK package for automated manufacturing, while IPP65R099C7 trades guaranteed avalanche robustness for slightly lower R_DS(on) but demands more conservative layout and gate drive design.

Availability

STB34N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant D²PAK packaging.

Supply support for STB34N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V switching applications where low R_DS(on), avalanche ruggedness, and dv/dt immunity are mandatory.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STB34N65M5 supports 17.7 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS8915 Rev 5. This value accounts for thermal derating due to junction-to-case resistance (0.66 °C/W) and is validated under steady-state conduction conditions with proper PCB copper area.

Does STB34N65M5 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain body diode characterized with 350 ns reverse recovery time (t_rr) and 5.6 µC reverse recovery charge (Q_rr) at T_J = 25 °C, ISD = 28 A, and di/dt = 100 A/µs. These values increase to 422 ns and 7.4 µC at 150 °C, confirming suitability for medium-frequency hard-switched topologies without external diode supplementation.

Can STB34N65M5 be used in zero-voltage switching (ZVS) resonant converters?

Yes - its low output capacitance (C_oss = 75 pF typ.), low Q_gd/Q_gs ratio, and 62.5 nC total gate charge enable reliable ZVS operation in LLC and phase-shifted full-bridge converters up to 300 kHz. The 50 V/ns dv/dt ruggedness further ensures robustness during resonant node voltage transitions.

Is the D²PAK package lead-free and RoHS compliant?

Yes, the STB34N65M5 D²PAK package meets RoHS Directive 2011/65/EU and is manufactured using lead-free terminations and halogen-free molding compounds, as confirmed in ST's ECOPACK documentation referenced in DS8915 Rev 5 Section 4. It is rated for reflow soldering per JEDEC J-STD-020 moisture sensitivity level 1.

STB34N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB34N65M5 FAQ

1.How can I place an order for STB34N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB34N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB34N65M5 reliable?

The price and inventory of STB34N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB34N65M5 is usually 5 days.

3.What payment methods are accepted for STB34N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB34N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB34N65M5?

STB34N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB34N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB34N65M5?

For technical support, including STB34N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB34N65M5 requirements.

6.How does Aetrix verify that STB34N65M5 is sourced from the original manufacturer or authorized distributors?

All STB34N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB34N65M5 meets industry standards.

7.What is the process for return or replacement of STB34N65M5?

All STB34N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB34N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB34N65M5 part is unused and in its original packaging.

Return procedure for STB34N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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