STMicroelectronics STB34NM60N

Overview

STB34NM60N from STMicroelectronics is an N-channel 600 V, 105 mΩ (max), 31.5 A MDmesh™ II Power MOSFET in D²PAK (TO-263) package, optimized for high-efficiency hard-switching and resonant converters. It delivers low gate charge (84 nC), low input capacitance (2722 pF), and 100% avalanche-tested ruggedness for reliable operation in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STB34NM60N datasheet, STB34NM60N pinout, STB34NM60N application, or STB34NM60N equivalent, key selection criteria include its 600 V V_DS, 92 mΩ typical R_DS(on), 15 V/ns diode recovery dv/dt rating, and D²PAK thermal resistance of 0.5 °C/W (junction-to-case), critical for high-power density designs.

Technical Context

This device employs ST's second-generation MDmesh vertical strip architecture to minimize conduction and switching losses simultaneously. Its low C_iss/C_oss ratio (2722 pF / 173 pF) and 458 pF equivalent output capacitance support fast, low-loss switching up to 100 kHz in continuous conduction mode PFC.

The integrated body diode exhibits 412 ns reverse recovery time at 31.5 A and 100 A/µs di/dt, with 8 µC Q_rr, enabling robust performance in bridge-leg and synchronous rectification topologies without external snubbers.

Key Specifications

Pinout & Package

STB34NM60N is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, 2.54 mm lead pitch, and a 9.35 mm × 10.40 mm footprint per ST's recommended land pattern (DS6904 Fig. 20).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP34NM60N, STB34NM60N offers 30% lower junction-to-ambient thermal resistance in automated assembly; versus IPP60R190C7, it provides 45% lower R_DS(on) at the cost of higher Q_g, making it optimal for medium-frequency, high-current PFC and hard-switched SMPS.

Availability

STB34NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC optimizers, EV on-board chargers, and three-phase motor drives requiring stable component supply and long-term production continuity.

Supply support for STB34NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB34NM60N supports 20 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS6904 Rev 10. This rating assumes proper PCB copper area and heatsinking to achieve the 0.5 °C/W R_thJC thermal path.

Does STB34NM60N have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithic source-drain body diode rated for 31.5 A continuous and 126 A pulsed current. At T_J = 150 °C, its reverse recovery time is 490 ns with 10 µC Q_rr and 43 A I_RRM, measured under 31.5 A, 100 A/µs di/dt, and 60 V V_DD conditions.

Can STB34NM60N replace STP34NM60N in existing TO-220 designs?

No direct drop-in replacement is possible due to package incompatibility: STB34NM60N uses D²PAK (TO-263) with gull-wing leads and exposed drain tab, while STP34NM60N uses through-hole TO-220. Layout, thermal interface, and assembly process must be redesigned for surface-mount implementation.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) is specified from 2 V to 4 V at 25 °C (Table 4), with typical value of 3 V. As shown in Figure 9 of DS6904, it decreases linearly to ~0.7× nominal at −50 °C and increases to ~1.1× at 150 °C, ensuring stable turn-on behavior across the full −55 °C to 150 °C operating junction range.