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STMicroelectronics STB35N60DM2

Name: STB35N60DM2
Brand: STMicroelectronics
SKU: STB35N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB35N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB35N60DM2.pdf

Description:: MOSFET N-CH 600V 28A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,930

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Product details

Overview

STB35N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in D²PAK (TO-263) package, featuring 600 V V_(BR)DSS, 0.094 Ω typ. R_DS(on), 28 A continuous drain current, fast-recovery body diode (t_rr = 120 ns), and Zener-protected gate. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STB35N60DM2 datasheet, STB35N60DM2 pinout, STB35N60DM2 application, or STB35N60DM2 equivalent, key selection criteria include avalanche ruggedness (E_AS = 650 mJ), dv/dt immunity (50 V/ns), low Q_g (54 nC), fast diode recovery (Q_rr = 572 nC), and thermal resistance (R_thj-case = 0.6 °C/W).

Technical Context

This MDmesh™ DM2 device integrates a fast-recovery body diode with ultra-low Q_rr and t_rr, enabling efficient hard-switching and resonant topologies. Its low C_iss (2400 pF) and C_rss (2.8 pF) reduce switching losses and improve gate drive efficiency.

The built-in back-to-back Zener diodes provide ±30 V gate-source ESD protection without external components, while its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions (I_AR = 6 A, E_AS = 650 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - supports primary-side switching in 400 V AC-input SMPS and industrial DC-link applications
R_DS(on) max	0.110 Ω - enables low conduction loss at 28 A, critical for high-current PFC and LLC stages
Q_g	54 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
t_rr	120 ns @ T_j = 25 °C - minimizes diode reverse recovery loss and EMI in bridge configurations
R_thj-case	0.6 °C/W - enables 210 W dissipation with modest heatsinking, suitable for compact power modules
dv/dt ruggedness	50 V/ns - sustains reliable operation in high-dV/dt environments like motor drives and inverters
E_AS	650 mJ - withstands single-pulse avalanche stress without degradation, enhancing system reliability

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration with large copper area for thermal and electrical performance. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET control node; requires <10 V threshold and low-inductance routing
Tab (Drain)	Power output / high-voltage node	Internally connected to drain; serves as primary heat sink interface and high-side power path

Key Features

Feature	Design Value
Fast-recovery body diode	Q_rr = 572 nC, t_rr = 120 ns - cuts diode switching loss by >40% vs standard superjunction MOSFETs
Low gate charge	Q_g = 54 nC - reduces driver power consumption and simplifies gate drive design
Zener-protected gate	V_(BR)GSO = ±30 V - eliminates need for external gate clamps in noisy industrial environments
High dv/dt ruggedness	50 V/ns - prevents spurious turn-on in half-bridge and full-bridge layouts
100% avalanche tested	E_AS = 650 mJ - guarantees robustness against transient overvoltage events in real-world systems

Applications

Industrial Motor Drives

Server/Telecom PSU

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors up to 5 kW.

IC Role / Device Role / Timing Role: High-side and low-side switching element with synchronous rectification capability via integrated diode.

Use Value: Low Q_rr and high dv/dt immunity suppress shoot-through risk and reduce snubber losses by 30%.

Use Scenario: Active clamp forward or LLC resonant converter in 1–3 kW telecom rectifiers.

IC Role / Device Role / Timing Role: Primary-side switch handling 400 V DC bus with ZVS operation enabled by fast diode recovery.

Use Value: 120 ns t_rr and 572 nC Q_rr enable reliable zero-voltage switching down to 200 kHz.

Photovoltaic Inverters

EV Onboard Chargers

Use Scenario: DC-DC boost stage in string inverters interfacing 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: High-voltage switch operating at 50–100 kHz with unidirectional energy transfer.

Use Value: 600 V rating and 0.110 Ω R_DS(on) support >98.5% peak efficiency at full load.

Use Scenario: Isolated DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V AC grid.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier and primary-side switch in dual-active-bridge topology.

Use Value: Zener-protected gate and 650 mJ E_AS ensure reliability during frequent polarity reversals and fault transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7XKSA1	R_DS(on) = 0.099 Ω, Q_g = 62 nC, no integrated Zener, t_rr = 220 ns	Lacks fast diode and gate protection; requires external clamping and snubbers	Prefer when cost sensitivity outweighs diode recovery and ESD robustness needs
IXFH30N60X3	R_DS(on) = 0.125 Ω, Q_g = 45 nC, t_rr = 100 ns, no Zener, TO-247 package	Higher R_DS(on) and through-hole mounting limit power density and thermal cycling endurance	Choose only if legacy TO-247 footprint compatibility is mandatory

Compared with IPP60R099C7XKSA1 and IXFH30N60X3, STB35N60DM2 delivers superior system-level reliability in bridge topologies due to its integrated Zener protection, lower Q_rr, and surface-mount D²PAK thermal performance-reducing BOM count and improving long-term field failure rates.

Availability

STB35N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, photovoltaic inverters, server/telecom power supplies, and EV onboard chargers requiring stable component supply and long-lifecycle support.

Supply support for STB35N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh™ DM2 series targets high-efficiency, high-reliability power conversion systems-specifically optimized for soft-switching topologies, bridge circuits, and applications demanding fast body diode recovery and avalanche ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB35N60DM2 supports 17 A continuous drain current at T_case = 100 °C, derated from 28 A at 25 °C per its SOA curve. This reflects thermal limitations of the D²PAK package and must be validated with actual board layout and heatsink design.

Does the STB35N60DM2 require an external gate resistor for stability?

A gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, as confirmed by test circuit Figure 14. The device's low intrinsic gate resistance (4.3 Ω) makes it sensitive to PCB parasitics without proper gate drive tuning.

Can the STB35N60DM2 replace older STP35N60DM2 in existing designs?

Yes-STB35N60DM2 is a direct drop-in replacement for STP35N60DM2 with identical pinout, R_DS(on), and voltage rating. It improves on diode recovery (t_rr reduced from 220 ns to 120 ns) and adds Zener gate protection, enhancing reliability without layout changes.

Is the D²PAK tab electrically isolated from the PCB mounting pad?

No-the D²PAK tab is internally connected to the drain and must be electrically isolated from the PCB ground plane using insulating thermal pads or ceramic substrates. Direct soldering to copper pour creates a short unless isolation is explicitly designed.

STB35N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB35N60DM2 FAQ

1.How can I place an order for STB35N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB35N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB35N60DM2 reliable?

The price and inventory of STB35N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB35N60DM2 is usually 5 days.

3.What payment methods are accepted for STB35N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB35N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB35N60DM2?

STB35N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB35N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB35N60DM2?

For technical support, including STB35N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB35N60DM2 requirements.

6.How does Aetrix verify that STB35N60DM2 is sourced from the original manufacturer or authorized distributors?

All STB35N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB35N60DM2 meets industry standards.

7.What is the process for return or replacement of STB35N60DM2?

All STB35N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STB35N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB35N60DM2 part is unused and in its original packaging.

Return procedure for STB35N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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