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STMicroelectronics STB35N65DM2

Name: STB35N65DM2
Brand: STMicroelectronics
SKU: STB35N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB35N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB35N65DM2.pdf

Description:: MOSFET N-CH 650V 28A D2PAK

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Product details

Overview

STB35N65DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 650 V V_DS, 93 mΩ typ. R_DS(on) at V_GS = 10 V, 32 A continuous drain current, fast-recovery body diode (t_rr = 100 ns @ T_J = 25 °C), and 100% avalanche tested. It is engineered for ZVS phase-shift converters and full-bridge topologies requiring low Q_rr (0.42 µC) and high dv/dt ruggedness (100 V/ns).

For engineers reviewing the STB35N65DM2 datasheet, STB35N65DM2 pinout, STB35N65DM2 application, or STB35N65DM2 equivalent, key selection criteria include its 56.3 nC total gate charge, 2540 pF input capacitance, 1.6 V source-drain forward voltage at 32 A, and D²PAK thermal resistance of 0.5 °C/W junction-to-case - critical for high-efficiency SMPS and industrial power supplies.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. Its low C_oss,eq (204 pF) and ultra-low Q_gd (27.6 nC) minimize switching losses in resonant and soft-switching topologies.

The device delivers stable R_DS(on) across temperature (1.8× increase from 25 °C to 150 °C), supports unclamped inductive switching up to 1150 mJ E_AS, and maintains 100 V/ns dv/dt immunity under V_DS ≤ 520 V - enabling robust operation in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports primary-side switching in 400 V AC-input offline converters and telecom rectifiers.
R_DS(on) max	110 mΩ - ensures <1.1 W conduction loss at 32 A, enabling compact heatsink design.
Q_g	56.3 nC - reduces gate drive power and enables use with standard 1-A peak drivers.
t_rr	100 ns @ T_J = 25 °C - minimizes diode recovery loss and EMI in bridge-leg commutation.
dv/dt ruggedness	100 V/ns - prevents spurious turn-on during high-slew-rate transients in motor drives.
E_AS	1150 mJ - sustains single-pulse inductive energy without failure in UPS and PFC stages.
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C case rise, supporting high-power density layouts.

Pinout & Package

STB35N65DM2 is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package features 3 terminals: Drain (Tab + Pin 2), Gate (Pin 1), Source (Pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Tab & Pin 2	Drain	High-current output node; electrically and thermally connected to PCB copper pour for heat dissipation.
Pin 1	Gate	Control input requiring low-impedance drive due to 4.2 Ω intrinsic gate resistance and 56.3 nC Q_g.
Pin 3	Source	Reference node for gate drive; tied to power ground plane to minimize common-source inductance.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 100 ns and Q_rr = 0.42 µC enable zero-voltage switching in LLC and phase-shifted full-bridge converters.
Extremely low gate charge	Q_g = 56.3 nC reduces driver stress and switching transition time, lowering dynamic losses by >15% vs. legacy 650 V MOSFETs.
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection prevents ESD-induced failure during assembly and operation.
100% avalanche tested	Each unit passes unclamped inductive switching test to 1150 mJ, ensuring reliability in overcurrent fault conditions.
High dv/dt ruggedness	100 V/ns immunity at V_DS ≤ 520 V eliminates need for external snubbers in high-frequency motor inverters.

Applications

Industrial Motor Inverter

Telecom Rectifier

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 5–10 kW AC induction motors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6–20 kHz PWM bridge leg with active freewheeling via body diode.

Use Value: 100 ns t_rr and 100 V/ns dv/dt rating suppress shoot-through risk and reduce snubber losses by 30% vs. standard superjunction MOSFETs.

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with PFC + LLC topology.

IC Role / Device Role / Timing Role: Main switch in LLC resonant tank, operating in ZVS mode above 200 kHz with synchronous rectification.

Use Value: 204 pF C_oss,eq and 56.3 nC Q_g enable >96% efficiency at full load while maintaining <150 °C junction temperature.

Server PSU

EV Onboard Charger

Use Scenario: High-density 1U server power supply with 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated DC-DC stage, leveraging low R_DS(on) and fast diode for reverse conduction.

Use Value: 93 mΩ R_DS(on) and 1.6 V V_SD at 32 A cut conduction loss by 22% compared to discrete Schottky solutions.

Use Scenario: Primary-side switch in bidirectional OBC (onboard charger) handling 6.6 kW AC/DC and DC/AC conversion.

IC Role / Device Role / Timing Role: Half-bridge switch in dual-active-bridge (DAB) topology, requiring bidirectional current capability and soft recovery.

Use Value: 90 A pulsed drain current (I_DM) and 17.6 A I_RRM support regenerative braking energy return without external diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N65DM2	Same die, TO-247 package; R_thJC = 0.45 °C/W, higher creepage, through-hole mounting.	Preferred for high-reliability industrial inverters where mechanical robustness and manual rework are required.	Select when board-level thermal management favors through-hole heatsinking or UL creepage >8 mm is mandated.
IPW65R090CFD7	Infineon CoolMOS CFD7; 650 V, 90 mΩ, Q_g = 52 nC, t_rr = 110 ns, no integrated Zener gate protection.	Better suited for hard-switched PFC but lacks STB35N65DM2's 100 V/ns dv/dt rating and avalanche screening.	Choose only if gate drive circuit includes external clamping and system-level avalanche testing is performed.

Compared with STW35N65DM2 and IPW65R090CFD7, STB35N65DM2 offers superior surface-mount thermal performance (0.5 °C/W vs. 0.45 °C/W with larger footprint penalty), guaranteed Zener gate protection, and factory-validated 100 V/ns dv/dt - making it optimal for space-constrained, high-reliability SMPS designs.

Availability

STB35N65DM2 is available at Aetrix Electronics and suitable for industrial motor inverters, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB35N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STB35N65DM2 belongs to the MDmesh DM2 family - engineered specifically for high-efficiency, high-frequency switched-mode power supplies demanding low Q_rr, fast diode recovery, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB35N65DM2 supports 20 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12233 Rev 4. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.

Does this MOSFET require external gate protection?

No. STB35N65DM2 integrates Zener-protected gate oxide, rated for ±25 V V_GS. External gate resistors (≥10 Ω) are recommended for EMI control and ringing suppression, but TVS diodes or clamps are not required for normal operation per ST's qualification data.

How does the body diode performance compare at elevated temperature?

At T_J = 150 °C, reverse recovery time increases to 205 ns and Q_rr rises to 1.8 µC (Table 7), doubling both metrics versus 25 °C. This is fully characterized and accounted for in ST's ZVS design guidelines for phase-shifted converters.

Can STB35N65DM2 be used in synchronous rectification mode?

Yes - its low R_DS(on) (93 mΩ typ.), low V_SD (1.6 V at 32 A), and fast t_rr make it suitable for secondary-side synchronous rectification in isolated DC-DC converters, provided gate drive timing avoids cross-conduction and accounts for body diode conduction delay.

STB35N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB35N65DM2 FAQ

1.How can I place an order for STB35N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB35N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB35N65DM2 reliable?

The price and inventory of STB35N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB35N65DM2 is usually 5 days.

3.What payment methods are accepted for STB35N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB35N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB35N65DM2?

STB35N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB35N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB35N65DM2?

For technical support, including STB35N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB35N65DM2 requirements.

6.How does Aetrix verify that STB35N65DM2 is sourced from the original manufacturer or authorized distributors?

All STB35N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB35N65DM2 meets industry standards.

7.What is the process for return or replacement of STB35N65DM2?

All STB35N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STB35N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB35N65DM2 part is unused and in its original packaging.

Return procedure for STB35N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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