STMicroelectronics STB35N65M5

Overview

STB35N65M5 from STMicroelectronics is an N-channel 650 V, 85 mΩ typ. (98 mΩ max.), 27 A MDmesh™ M5 Power MOSFET in D²PAK (TO-263) package. It delivers extremely low R_DS(on), high dv/dt capability (15 V/ns), and 100% avalanche-tested ruggedness for high-efficiency hard-switching power converters in industrial SMPS and PFC stages.

For engineers reviewing the STB35N65M5 datasheet, STB35N65M5 pinout, STB35N65M5 application, or STB35N65M5 equivalent, key selection criteria include its 650 V V_BR(DSS), 85 mΩ typical on-resistance at V_GS = 10 V, 108 A pulsed drain current, 800 mJ single-pulse avalanche energy, and optimized output capacitance profile for ZVS-compatible topologies.

Technical Context

This MOSFET employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low conduction losses while maintaining robust switching behavior. Its 15 V/ns dv/dt rating and 360 ns reverse recovery time (T_J = 25 °C) support reliable operation in fast-switching bridge legs and resonant converters.

The device integrates a co-packaged body diode with 1.5 V forward voltage at 27 A and 7 µC reverse recovery charge, enabling efficient freewheeling in continuous conduction mode (CCM) PFC and LLC half-bridge designs without external SiC diodes.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab (pin 2/TAB) for low-thermal-resistance mounting to PCB copper pour or heatsink. Thermal resistance R_thJC = 0.78 °C/W enables >100 W dissipation with moderate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R090CFD7 and IXTH30N65X2, STB35N65M5 offers the best balance of low R_DS(on), moderate Q_g, and verified 15 V/ns dv/dt immunity-making it optimal for high-frequency, hard-switched industrial PFC and SMPS where both conduction and switching losses must be minimized simultaneously.

Availability

STB35N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, and solar inverter DC-link switching requiring stable component supply and long-term lifecycle support.

Supply support for STB35N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion systems operating at 65–300 kHz with stringent thermal and reliability requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB35N65M5 supports 17 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6068 Rev 4. This rating assumes proper PCB copper area (≥1 inch², 2-oz Cu) and thermal interface to heatsink; exceeding this current risks thermal runaway above 150 °C junction temperature.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features an intrinsic source-drain body diode rated for 27 A continuous and 108 A pulsed current. Key parameters include 1.5 V forward voltage at 27 A, 360 ns reverse recovery time (T_J = 25 °C), and 7 µC reverse recovery charge, all measured under standardized inductive switching conditions per Figure 16 in the datasheet.

Is the STB35N65M5 suitable for zero-voltage switching (ZVS) topologies?

Yes-its low C_oss (84 pF), low C_rss/C_iss ratio (5.5/3750 pF), and 220 pF Co(tr) enable predictable resonant turn-on. Measured E_on drops 35% when gate resistance is reduced from 10 Ω to 2.2 Ω, confirming strong ZVS compatibility in LLC and phase-shifted full-bridge designs up to 300 kHz.

What is the thermal resistance from junction to case, and how does it impact heatsink design?

R_thJC is 0.78 °C/W, meaning a 100 W power dissipation yields ~78 °C temperature rise from junction to case. For T_J ≤ 150 °C and T_C ≤ 100 °C, the required heatsink-to-ambient thermal resistance must be ≤ 32 °C/W-including interface material and airflow-enabling compact extruded aluminum heatsinks in natural convection applications.