Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB35NF10T4

Name: STB35NF10T4
Brand: STMicroelectronics
SKU: STB35NF10T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STB35NF10T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB35NF10T4.pdf

Description:: MOSFET N-CH 100V 40A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,307

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STB35NF10T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 100 V drain-source voltage, <0.035 Ω R_DS(on) at V_GS = 10 V and I_D = 17.5 A, 40 A continuous drain current at T_C = 25°C, and optimized for high-efficiency isolated DC-DC converters in telecom and computing power supplies.

For engineers reviewing the STB35NF10T4 datasheet, STB35NF10T4 pinout, STB35NF10T4 application, or STB35NF10T4 equivalent, key selection criteria include low gate charge (55 nC), exceptional dv/dt capability (13 V/ns), 100% avalanche-tested ruggedness, thermal resistance (R_thj-case = 1.30 °C/W), and D2PAK tape-and-reel packaging for automated assembly.

Technical Context

This MOSFET employs ST's STripFET™ II process to minimize input capacitance (C_iss = 1550 pF) and total gate charge (Q_g = 55 nC), enabling fast switching with reduced driver losses. Its 100% avalanche-tested construction supports unclamped inductive load operation up to 300 mJ single-pulse energy.

The device features a source-drain diode with 1.5 V forward voltage at 35 A and 160 ns reverse recovery time under harsh conditions (di/dt = 100 A/µs, T_j = 150°C), making it suitable for synchronous rectification and freewheeling roles in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V telecom DC-DC converters
R_DS(on)	<0.035 Ω - Low conduction loss enabling ≤2.4 W dissipation at 25 A DC, critical for thermal management
Q_g	55 nC - Enables efficient gate drive with standard 1–2 A peak drivers at 100–500 kHz switching frequencies
dv/dt	13 V/ns - Robust immunity to parasitic turn-on in high-noise, high-dV/dt environments like LLC resonant converters
E_AS	300 mJ - Confirmed avalanche energy rating allows safe operation during transient overvoltage events
R_thj-case	1.30 °C/W - Supports >85 W continuous power dissipation with moderate heatsinking (e.g., 10 cm² 1 mm Al)
I_D (T_C=100°C)	28 A - Derated current capability for sustained operation in enclosed, high-ambient industrial power modules

Pinout & Package

STB35NF10T4 uses the surface-mount D2PAK (TO-263) package with three terminals: Gate (pin 1), Drain (pin 2), Source (pin 3). The exposed drain pad (backside metal) serves as the primary thermal path and must be soldered to a PCB copper pour for effective heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; low input capacitance (C_iss = 1550 pF) minimizes Miller effect
2 (Drain)	High-side power terminal	Connected to primary bus (e.g., 48 V or 380 V); electrically tied to backside thermal pad
3 (Source)	Reference node / return path	Common connection point for gate drive return and current sensing; defines local ground reference

Key Features

Feature	Design Value
Low gate charge	55 nC total gate charge reduces switching losses and eases gate driver selection
Enhanced dv/dt immunity	13 V/ns rated slope prevents spurious turn-on in high-frequency, high-voltage converters
100% avalanche tested	Each unit validated for 300 mJ unclamped inductive energy, ensuring field reliability
STripFET™ II process	Optimized cell layout delivers <0.035 Ω R_DS(on) in compact D2PAK footprint
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter for telecom shelf power.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–300 kHz with zero-voltage switching assistance.

Use Value: Low Q_g and R_DS(on) enable >95% efficiency at full load while maintaining thermal margin on double-sided PCBs.

Use Scenario: High-current synchronous buck converter stage supplying CPU core voltage (e.g., 0.8–1.2 V @ 100+ A).

IC Role / Device Role / Timing Role: Lower-side FET in multiphase buck topology, leveraging low R_DS(on) and fast body diode recovery.

Use Value: 1.5 V V_SD and 160 ns t_rr reduce dead-time losses and improve light-load efficiency.

Industrial SMPS

LED Driver Power Stages

Use Scenario: Main switch in universal-input (90–264 VAC) offline flyback or PFC boost controller for factory automation power supplies.

IC Role / Device Role / Timing Role: Energy-transfer switch handling 40 A peak currents with repetitive avalanche stress.

Use Value: 300 mJ E_AS rating ensures robustness against line surges and transformer leakage spikes without snubber circuits.

Use Scenario: High-side switch in constant-current LED driver for street lighting (100–200 W, 350–700 mA output).

IC Role / Device Role / Timing Role: PWM-controlled power switch modulating LED string current at 1–10 kHz.

Use Value: 100 V V_DS safely accommodates LED string voltages up to 90 V plus transients, with minimal conduction loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	Same die, TO-220 through-hole package; R_thj-case = 1.30 °C/W identical, but higher R_thj-amb (62.5 vs 40 °C/W)	Preferred for prototyping, low-volume industrial controls where manual assembly or heatsink clamping is used	Select when board space permits larger footprint and thermal interface relies on external heatsink rather than PCB copper
IRF540NPBF	Higher R_DS(on) (0.044 Ω), higher Q_g (71 nC), lower ID (33 A), same 100 V rating	Suitable for lower-power (<150 W) consumer-grade SMPS where cost sensitivity outweighs efficiency targets	Choose only if legacy design reuse or distributor stock availability drives BOM decisions - not for new high-efficiency designs

Compared with STP35NF10 and IRF540NPBF, STB35NF10T4 delivers superior power density and thermal performance in automated SMT production, with verified avalanche ruggedness essential for telecom-grade reliability - making it the optimal choice for volume-manufactured, high-reliability power stages.

Availability

STB35NF10T4 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial SMPS requiring stable component supply, long-term lifecycle support, and RoHS-compliant tape-and-reel delivery.

Supply support for STB35NF10T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and communications markets.

STB35NF10T4 belongs to the STripFET™ II Power MOSFET product line, engineered specifically to deliver ultra-low gate charge and enhanced avalanche ruggedness for high-frequency, high-efficiency power conversion systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB35NF10T4 supports 28 A continuous drain current when the case temperature is maintained at 100°C, as specified in Table 1 of the official datasheet. This derating reflects thermal limitations of the D2PAK package and requires adequate PCB copper area or heatsinking to sustain. Operation above this current risks exceeding the 175°C maximum junction temperature.

Does STB35NF10T4 require a gate resistor for stability?

Yes - a gate resistor (typically 4.7 Ω to 22 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet's Figure 12 switching test circuit specifies R_G = 4.7 Ω for timing measurements, and omitting it may cause oscillation or shoot-through in bridge configurations.

Can STB35NF10T4 be used in synchronous rectification?

No - STB35NF10T4 is a standard N-channel MOSFET with a non-optimized body diode (t_rr = 160 ns, Q_rr = 720 nC); it lacks the low-Q_rr, fast-recovery characteristics required for efficient synchronous rectification. Dedicated SR controllers paired with logic-level, low-Q_rr FETs (e.g., STL110N10F7) are recommended instead.

Is the D2PAK footprint compatible with standard reflow profiles?

Yes - the STB35NF10T4's ECOPACK® D2PAK package is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C. The exposed drain pad requires controlled solder paste volume and thermal relief design to ensure void-free solder joints and optimal thermal transfer to the PCB.

STB35NF10T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB35NF10T4 FAQ

1.How can I place an order for STB35NF10T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB35NF10T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB35NF10T4 reliable?

The price and inventory of STB35NF10T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB35NF10T4 is usually 5 days.

3.What payment methods are accepted for STB35NF10T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB35NF10T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB35NF10T4?

STB35NF10T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB35NF10T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB35NF10T4?

For technical support, including STB35NF10T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB35NF10T4 requirements.

6.How does Aetrix verify that STB35NF10T4 is sourced from the original manufacturer or authorized distributors?

All STB35NF10T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB35NF10T4 meets industry standards.

7.What is the process for return or replacement of STB35NF10T4?

All STB35NF10T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB35NF10T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB35NF10T4 part is unused and in its original packaging.

Return procedure for STB35NF10T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…