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STMicroelectronics STB36NM60ND
- Part No.:
- STB36NM60ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB36NM60ND.pdf
- Description:
- MOSFET N-CH 600V 29A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:472
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Product details
Overview
STB36NM60ND from STMicroelectronics is an automotive-grade N-channel 600 V, 29 A FDmesh™ II Power MOSFET with integrated fast-recovery body diode in D²PAK package. It delivers 0.097 Ω typ RDS(on), 80.4 nC total gate charge, and 40 V/ns peak dv/dt capability, enabling high-efficiency switching in ZVS phase-shift converters and full-bridge topologies for on-board chargers and DC-DC converters.
For engineers reviewing the STB36NM60ND datasheet, STB36NM60ND pinout, STB36NM60ND application, or STB36NM60ND equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C max junction temperature, 110 mJ single-pulse avalanche energy, and low Qgd/Qgs ratio for robust hard-switching performance.
Technical Context
This MOSFET employs ST's second-generation FDmesh™ II vertical stripe layout, achieving ultra-low on-resistance and superior switching efficiency. Its intrinsic fast-recovery body diode supports synchronous rectification and reduces external snubber requirements in resonant topologies.
The device operates with a 3–5 V gate threshold voltage and exhibits stable RDS(on) up to 150 °C, supported by a 0.66 °C/W junction-to-case thermal resistance in the D²PAK package-critical for thermally constrained automotive power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands 600 V drain-source blocking voltage, suitable for 400 V bus systems with margin. |
| RDS(on) typ | 0.097 Ω - Enables <1.5 W conduction loss at 14.5 A, reducing heatsink size in high-current DC-DC stages. |
| ID cont @ TC=25°C | 29 A - Sustains continuous 29 A drain current with proper PCB copper and heatsinking. |
| Qg | 80.4 nC - Dictates gate driver power requirement; compatible with standard 2 A peak drivers at 100 kHz switching. |
| EAS | 110 mJ - Withstands single-pulse avalanche events without failure, enhancing system ruggedness in inductive load transients. |
| tr/tf | 53.4/61.8 ns - Fast edge rates support >200 kHz operation while limiting switching losses in soft-switched converters. |
| dv/dt immunity | 40 V/ns - Resists false turn-on during high dV/dt commutation, critical in half-bridge configurations. |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated tab, single-row 3-pin configuration with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; low 2.87 Ω gate input resistance minimizes driver loss. |
| 2 (S) | Source | Reference node for gate drive; connects to power ground plane; low-inductance layout essential for EMI control. |
| 3 (D) | Drain | Main power output; electrically connected to exposed metal tab; must be soldered to large copper area for thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and charging applications per stress test requirements. |
| Fully avalanche rated | 100% production-tested for single-pulse avalanche capability up to 110 mJ. |
| Low Qgd/Qgs ratio | 41.4 nC / 16 nC = 2.59 - Reduces Miller-induced shoot-through risk in bridge circuits. |
| Intrinsic fast-recovery body diode | trr = 175 ns @ TJ = 25°C - Eliminates need for external anti-parallel diode in synchronous rectifier designs. |
| Low Ciss/Coss ratio | 2785 pF / 168 pF ≈ 16.6 - Improves zero-voltage switching (ZVS) range in resonant converters. |
Applications
| On-Board Charger (OBC) | High-Voltage DC-DC Converter |
|---|---|
Use Scenario: Bidirectional 3.3 kW OBC stage converting AC grid to 400 V battery bus. IC Role / Device Role / Timing Role: High-side switch in interleaved LLC half-bridge; handles 29 A RMS current with ZVS operation. Use Value: Low RDS(on) and fast tr/tf reduce conduction + switching losses by ~18% vs. prior-gen MOSFETs, improving OBC efficiency to >96%. | Use Scenario: 1.5 kW isolated DC-DC stage stepping down 400 V battery to 12 V auxiliary supply. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology; operates at 100–150 kHz with soft switching. Use Value: 110 mJ EAS withstands bus overvoltage transients during load dump, eliminating need for clamping circuits. |
| Electric Power Steering (EPS) Inverter | Traction Inverter Auxiliary Stage |
Use Scenario: 3-phase inverter driving 12 V BLDC motor in column-assist EPS module. IC Role / Device Role / Timing Role: Low-side switch handling 29 A pulsed current; leverages fast body diode for freewheeling. Use Value: 175 ns trr limits reverse recovery loss and EMI, meeting CISPR-25 Class 5 radiated emissions targets. | Use Scenario: Auxiliary 400 V → 24 V converter powering gate drivers and MCU in main traction inverter. IC Role / Device Role / Timing Role: Primary switch in active clamp forward topology; benefits from low Qg for efficient 200 kHz operation. Use Value: 0.66 °C/W Rth(j-c) enables direct mounting to aluminum cold plate, simplifying thermal design and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW36NM60ND | Same die, TO-247 package; higher Rth(j-c) (0.5 °C/W), no isolation between tab and drain. | Better suited for bolt-down heatsink mounting in industrial SMPS; not surface-mount compatible. | Select when mechanical mounting constraints favor through-hole and higher thermal mass is available. |
| IXFH36N60P | 600 V, 36 A, 0.11 Ω RDS(on); non-AEC-Q101; higher Qg (110 nC); slower tr/tf. | Targeted at industrial UPS and solar inverters; lacks automotive qualification and avalanche testing. | Choose only for cost-sensitive non-automotive designs where AEC-Q101 and EAS are not required. |
Compared with STW36NM60ND, the STB36NM60ND offers superior board-level thermal integration and isolation but lower peak current rating; versus IXFH36N60P, it provides guaranteed automotive reliability and tighter parametric control at the expense of slightly higher unit cost.
Availability
STB36NM60ND is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC-DC converters, and electric power steering inverters requiring stable component supply across automotive production lifecycles.
Supply support for STB36NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's FDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power conversion-including traction auxiliaries, OBCs, and EPS systems-where AEC-Q101 compliance and rugged switching performance are mandatory.
FAQ
Is STB36NM60ND pin-compatible with STW36NM60ND?
No. STB36NM60ND uses a 3-pin D²PAK (TO-263) surface-mount package with isolated drain tab, while STW36NM60ND uses a 3-pin TO-247 through-hole package with non-isolated tab. Footprint, thermal interface, and mounting method differ fundamentally-PCB redesign is required for substitution.
What is the maximum recommended gate drive voltage?
The absolute maximum VGS is ±25 V, but ST recommends 10 V for full enhancement and optimal RDS(on). Driving above 15 V yields diminishing returns and increases gate oxide stress; below 8 V risks incomplete turn-on and elevated conduction loss. A 12 V ±10% gate driver with active Miller clamp is ideal.
Does the body diode support synchronous rectification?
Yes-the intrinsic fast-recovery body diode has trr = 175 ns (25°C) and Qrr = 1.4 µC, enabling use in synchronous rectifier configurations without external diodes. However, for highest efficiency at light loads, an external Schottky or SiC diode may still be preferred due to lower forward voltage.
How is avalanche ruggedness validated in production?
Every STB36NM60ND unit undergoes 100% production avalanche testing per JEDEC JESD22-A115. Devices are subjected to controlled single-pulse inductive switching events at IAR = 7 A and VDD = 50 V, verifying EAS ≥ 110 mJ. Test data is retained per lot and traceable via ST's quality documentation system.
STB36NM60ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 110mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80.4 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2785 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB36NM60ND FAQ
1.How can I place an order for STB36NM60ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STB36NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB36NM60ND reliable?
The price and inventory of STB36NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB36NM60ND is usually 5 days.
3.What payment methods are accepted for STB36NM60ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB36NM60ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB36NM60ND?
STB36NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB36NM60ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB36NM60ND?
For technical support, including STB36NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB36NM60ND requirements.
6.How does Aetrix verify that STB36NM60ND is sourced from the original manufacturer or authorized distributors?
All STB36NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB36NM60ND meets industry standards.
7.What is the process for return or replacement of STB36NM60ND?
All STB36NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB36NM60ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB36NM60ND part is unused and in its original packaging.
Return procedure for STB36NM60ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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