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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB38N65M5

Name: STB38N65M5
Brand: STMicroelectronics
SKU: STB38N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB38N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB38N65M5.pdf

Description:: MOSFET N-CH 650V 30A D2PAK

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Product details

Overview

STB38N65M5 from STMicroelectronics is an N-channel 650 V, 30 A Power MOSFET based on MDmesh M5 vertical process technology in D²PAK (TO-263) package, featuring 73 mΩ typical R_DS(on), 15 V/ns dv/dt ruggedness, and 100% avalanche tested performance. It delivers ultra-low conduction loss for high-efficiency AC-DC PFC stages and industrial SMPS.

For engineers reviewing the STB38N65M5 datasheet, STB38N65M5 pinout, STB38N65M5 application, or STB38N65M5 equivalent, key selection criteria include its 650 V V_DSS, 73 mΩ R_DS(on) at 10 V_GS, 71 nC total gate charge, 150 °C max junction temperature, and D²PAK thermal resistance of 0.66 °C/W junction-to-case.

Technical Context

This device implements a high-voltage superjunction structure with optimized charge balancing, enabling stable operation under fast switching transients up to 50 V/ns MOSFET dv/dt ruggedness and 15 V/ns diode recovery dv/dt. Its MDmesh M5 architecture reduces both R_DS(on) × Q_g and E_oss versus prior generations.

The integrated body diode exhibits 382 ns reverse recovery time at 25 °C and 522 ns at 150 °C, with 6.6 µC Q_rr (25 °C) and 10.3 µC (150 °C), supporting hard-switched and ZVS topologies where diode softness impacts EMI and losses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands full mains rectified voltage in 400 VAC systems with margin for surge and ringing.
R_DS(on) typ.	73 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 30 A, critical for high-power PFC efficiency.
Q_g	71 nC - Determines gate drive power and switching speed; compatible with standard 1–2 A peak drivers.
E_AS	660 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive turn-off without failure.
R_thJC	0.66 °C/W - Enables 190 W continuous dissipation at T_C = 25 °C; requires heatsink interface ≤ 0.5 °C/W for 150 °C T_J.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in high-frequency bridge configurations.
I_D (T_C = 100 °C)	19 A - Defines usable current derating in compact enclosures with elevated case temperatures.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for low-inductance, high-current PCB mounting and thermal path to copper pour. Standard 3-pin layout with G-S-D terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	High-impedance control input; requires 10 V drive for full enhancement; sensitive to ESD.
2 (Center)	Drain (D) / Tab	Main high-side current path; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential.
3 (Right)	Source (S)	Return path for load current; reference node for gate drive; connects to power ground or floating source in high-side configuration.

Key Features

Feature	Design Value
MDmesh M5 superjunction technology	Reduces R_DS(on) × Q_g by ~35% vs. M2 generation, improving figure-of-merit for >100 kHz SMPS.
100% avalanche tested	Guarantees robustness against overvoltage events in flyback, LLC, and PFC circuits without external snubbers.
Low C_oss (74 pF) & C_rss (5.8 pF)	Minimizes Miller effect and improves controllability during high-dv/dt transitions in half-bridge operation.
Optimized body diode	382 ns t_rr and 6.6 µC Q_rr reduce switching loss and EMI in hard-switched converters using synchronous rectification.
ECOPACK® compliant	Meets RoHS and halogen-free requirements without compromising thermal or electrical performance.

Applications

Industrial SMPS

Server & Telecom PSU

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward or LLC resonant converter primary leg.

Use Value: 73 mΩ R_DS(on) and 71 nC Q_g enable >96% efficiency at full load while maintaining thermal headroom on 2-oz copper PCBs.

Use Scenario: Boost PFC stage in redundant 2 kW server power supplies with universal AC input.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) PFC switch.

Use Value: 650 V rating and 50 V/ns dv/dt ruggedness ensure reliability across 85–264 VAC input with line surges and harmonic distortion.

Solar Inverter DC-DC Stage

EV Onboard Charger

Use Scenario: Isolated DC-DC converter in string inverters converting 600–1000 V DC to 400 V bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: 660 mJ E_AS and avalanche-tested construction tolerate fault conditions during grid disconnection or islanding detection.

Use Scenario: High-voltage DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V AC grid.

IC Role / Device Role / Timing Role: Secondary-side high-side switch in dual-active-bridge (DAB) isolation stage.

Use Value: Low Q_gd/Q_g ratio (30/71 nC) enables precise zero-voltage switching timing control and reduced dead-time losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP38N65M5	Same die, TO-220 package; R_thJC = 0.66 °C/W but R_thJA = 62.5 °C/W (vs. 30 °C/W for D²PAK).	Lower power density; suited for lower-current (<15 A) or forced-air-cooled designs where footprint is less constrained.	Select when mechanical compatibility with legacy TO-220 footprints is required and thermal budget allows higher case rise.
STW38N65M5	Same die, TO-247 package; identical R_thJC but improved R_thJA = 50 °C/W and higher creepage/clearance.	Better suited for high-isolation, high-reliability industrial drives and UPS where safety spacing and thermal margin are critical.	Choose for designs requiring >5 mm creepage or where TO-247 mounting simplifies heatsink integration and vibration resistance.

Compared with STP38N65M5 and STW38N65M5, the STB38N65M5 offers superior PCB thermal performance (R_thJA = 30 °C/W on 1 in² FR-4), smaller footprint, and tape-and-reel automation compatibility-making it optimal for high-volume, space-constrained, and thermally demanding PFC and SMPS modules.

Availability

STB38N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STB38N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in 600–650 V industrial and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB38N65M5 supports 19 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS8914 Rev 5. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the SOA boundary at elevated ambient conditions.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 3–5 V and is fully enhanced at V_GS = 10 V. While a small negative bias (e.g., –5 V) improves noise immunity in high-dv/dt environments, the datasheet confirms stable turn-off down to V_GS = 0 V, and no negative gate drive is required for normal operation.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode has 382 ns t_rr and 6.6 µC Q_rr at 25 °C, which is significantly slower and higher-loss than SiC Schottky diodes. However, its soft recovery characteristic reduces EMI and voltage overshoot compared to fast-recovery silicon diodes, making it suitable for moderate-frequency hard-switched topologies where cost and integration outweigh ultra-low Q_rr needs.

Can STB38N65M5 replace STB22N65M5 in existing designs?

Yes, with validation: STB38N65M5 offers lower R_DS(on) (73 mΩ vs. 125 mΩ), higher I_D (30 A vs. 20 A), and improved dv/dt ruggedness (50 V/ns vs. 35 V/ns). Layout changes may be needed due to different thermal pad geometry, and gate drive strength should be verified given its higher Q_g (71 nC vs. 45 nC).

STB38N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB38N65M5 FAQ

1.How can I place an order for STB38N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB38N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB38N65M5 reliable?

The price and inventory of STB38N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB38N65M5 is usually 5 days.

3.What payment methods are accepted for STB38N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB38N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB38N65M5?

STB38N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB38N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB38N65M5?

For technical support, including STB38N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB38N65M5 requirements.

6.How does Aetrix verify that STB38N65M5 is sourced from the original manufacturer or authorized distributors?

All STB38N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB38N65M5 meets industry standards.

7.What is the process for return or replacement of STB38N65M5?

All STB38N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB38N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB38N65M5 part is unused and in its original packaging.

Return procedure for STB38N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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