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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB3N62K3

Name: STB3N62K3
Brand: STMicroelectronics
SKU: STB3N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB3N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB3N62K3.pdf

Description:: MOSFET N-CH 620V 2.7A D2PAK

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Product details

Overview

STB3N62K3 from STMicroelectronics is an N-channel 620 V, 2.2 Ω typ. (2.5 Ω max), 2.7 A MDmesh™ K3 Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial AC-DC converters where avalanche ruggedness and low gate charge are critical.

For engineers reviewing the STB3N62K3 datasheet, STB3N62K3 pinout, STB3N62K3 application, or STB3N62K3 equivalent, this device offers verified 9 V/ns dv/dt capability, 100 mJ single-pulse avalanche energy, Zener-protected gate, and optimized diode reverse recovery (trr = 190 ns at 25 °C) - key selection criteria for flyback, resonant, and hard-switched topologies.

Technical Context

This MOSFET employs ST's MDmesh™ K3 vertical superjunction architecture with enhanced cell pitch and optimized drift region doping to achieve ultra-low R_DS(on) × Q_g figure-of-merit. Its intrinsic gate resistance is 10 Ω, and C_iss/C_oss/C_rss values are 385 pF / 55 pF / 6 pF at V_DS = 25 V, enabling fast, low-loss switching.

The integrated source-drain diode features improved reverse recovery (Q_rr = 825 nC, I_RRM = 9 A) and is Zener-protected across gate-source (V_(BR)GSO = 30 V), eliminating need for external ESD clamps in board-level designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports 400 V AC mains input with 1.5× safety margin in offline converters
R_DS(on) max	2.5 Ω at V_GS = 10 V, I_D = 1.4 A - enables <1.8 W conduction loss at 1.7 A continuous current
Q_g	13 nC - reduces gate drive power and enables use of low-current drivers (e.g., 100 mA peak)
E_AS	100 mJ - withstands unclamped inductive switching events without failure in PFC boost chokes
dv/dt	9 V/ns - ensures noise immunity and prevents spurious turn-on in high-dV/dt environments
trr	190 ns at T_j = 25 °C - minimizes commutation losses and EMI in quasi-resonant flyback designs
R_thj-case	2.78 °C/W - allows 45 W dissipation with ≤125 °C case temperature rise, suitable for compact heatsinks

Pinout & Package

DPAK (TO-252) package with exposed drain tab (pin 2/TAB) for thermal and electrical connection; standard 3-pin surface-mount outline compatible with IPC-7351B footprint FP_0068772_25.

Pin/Terminal	Circuit Role	Design Meaning
D (TAB)	Drain	Exposed metal pad - must be soldered to large copper pour for thermal management and primary-side ground reference
G	Gate	High-impedance control terminal - requires low-inductance routing and local 100 nF bypass near gate resistor
S	Source	Power return path - forms Kelvin sense point for accurate current monitoring in high-side configurations

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive kickback in boost and flyback transformers without derating
Zener-protected gate	Integrated 30 V bidirectional Zener eliminates need for external gate clamp diodes in ESD-prone environments
Extremely high dv/dt capability	9 V/ns rating prevents false triggering during fast voltage transients on drain node
Low intrinsic capacitance	C_oss = 55 pF reduces switching losses and improves efficiency above 100 kHz operation
Improved diode reverse recovery	Q_rr = 825 nC and trr = 190 ns lower than legacy K2 devices, cutting diode-related losses by ~30%

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 65 W universal-input offline flyback converter for medical power supplies.

IC Role / Device Role / Timing Role: Main high-voltage switch operating at 65–130 kHz with ZVS-assisted turn-on.

Use Value: Low Q_g (13 nC) and fast trr (190 ns) reduce total switching loss to <350 mW, enabling >90% efficiency at full load.

Use Scenario: 300 W active PFC front-end in programmable logic controller (PLC) power module.

IC Role / Device Role / Timing Role: Continuous-conduction-mode (CCM) boost switch handling 2.7 A RMS current at 65 kHz.

Use Value: 100 mJ E_AS withstands worst-case line surge events; R_DS(on) = 2.5 Ω limits conduction loss to 1.8 W at 1.7 A DC.

LED Driver Flyback Switch

UPS Inverter Half-Bridge

Use Scenario: 150 W isolated LED driver for street lighting with wide input range (90–305 V AC).

IC Role / Device Role / Timing Role: Primary-side switching element in QR flyback topology with valley-switching control.

Use Value: 9 V/ns dv/dt immunity prevents false turn-on during deep valley detection; low C_oss enables reliable zero-voltage switching.

Use Scenario: High-reliability 1 kVA online UPS inverter stage operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving transformer-coupled output stage.

Use Value: Zener-protected gate ensures long-term reliability under repeated ESD exposure in service environments; R_thj-case = 2.78 °C/W supports forced-air cooling at 45 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD3N62K3	Identical electrical specs and DPAK package; same die, different marking and tape/reel packaging	No functional difference - used interchangeably in automated SMT lines requiring tape-and-reel delivery	Select STD3N62K3 for pick-and-place compatibility; STB3N62K3 may be offered in alternative packaging formats
STP3N62K3	Same die, but in TO-220 package (not TO-220FP); R_thj-case = 2.5 °C/W vs 2.78 °C/W; higher ID_pulsed = 12 A	Better thermal performance in through-hole designs with heatsink mounting; not surface-mount compatible	Choose STP3N62K3 for higher-power through-hole applications where PCB space permits larger package

Compared with STD3N62K3, STB3N62K3 shares identical die performance but differs only in ordering code and packaging logistics; versus STP3N62K3, it trades thermal advantage and pulse current headroom for surface-mount manufacturability and reduced board area.

Availability

STB3N62K3 is available at Aetrix Electronics and suitable for offline SMPS, industrial PFC modules, and LED driver designs requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STB3N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering innovative silicon solutions for automotive, industrial, and power management applications.

The MDmesh™ K3 product line targets high-efficiency, high-reliability switching in 500–800 V applications, specifically engineered to replace older superjunction MOSFETs with lower R_DS(on) × Q_g and superior avalanche ruggedness.

FAQ

What is the maximum continuous drain current for STB3N62K3 at 100 °C case temperature?

The maximum continuous drain current is 1.7 A when the case temperature reaches 100 °C, as specified in Table 1 of DS5888 Rev 3. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures.

Does STB3N62K3 include integrated gate protection?

Yes - STB3N62K3 integrates back-to-back Zener diodes between gate and source with a breakdown voltage of 30 V (±1 mA test condition). This protects against ESD and overvoltage transients, eliminating the need for external gate clamping components in most designs.

Can STB3N62K3 be used in hard-switched PFC circuits?

Yes - its 100 mJ single-pulse avalanche energy, 9 V/ns dv/dt rating, and low Q_rr (825 nC) make it suitable for continuous-conduction-mode (CCM) PFC boost stages up to 300 W. Thermal design must maintain T_j ≤ 150 °C using the 2.78 °C/W R_thj-case.

How does the source-drain diode performance compare to previous-generation MDmesh devices?

Compared to MDmesh K2, STB3N62K3 shows 25% lower Q_rr (825 nC vs ~1100 nC) and 15% faster trr (190 ns vs ~225 ns) at 25 °C, achieved via optimized body diode doping and structure - directly reducing commutation losses and EMI in flyback and LLC topologies.

STB3N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 385 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB3N62K3 FAQ

1.How can I place an order for STB3N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB3N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB3N62K3 reliable?

The price and inventory of STB3N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB3N62K3 is usually 5 days.

3.What payment methods are accepted for STB3N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB3N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB3N62K3?

STB3N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB3N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB3N62K3?

For technical support, including STB3N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB3N62K3 requirements.

6.How does Aetrix verify that STB3N62K3 is sourced from the original manufacturer or authorized distributors?

All STB3N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB3N62K3 meets industry standards.

7.What is the process for return or replacement of STB3N62K3?

All STB3N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB3N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB3N62K3 part is unused and in its original packaging.

Return procedure for STB3N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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